Abstract: An electronic device including a circuit layer, an electronic element, a first flow-path structure and a fluid material is disclosed. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The first flow-path structure includes a first flow path, and the electronic element is disposed in the first flow-path structure. The fluid material is disposed in the first flow path. The fluid material is used for performing heat exchange with the electronic element. The circuit layer includes an input hole and an output hole, and the fluid material enters the first flow path through the input hole and exits the first flow path through the output hole.

Abstract: An electronic device includes an electronic unit and a circuit structure. The circuit structure is electrically connected to the electronic unit and includes a first circuit structure, a second circuit structure, a bonding pad, and an adjustment layer. The first circuit structure includes at least one first circuit layer and at least one first insulation layer. The second circuit structure is disposed between the electronic unit and the first circuit structure, and includes at least one second circuit layer and at least one second insulation layer. The bonding pad and the adjustment layer are disposed between the second circuit structure and the first circuit structure. A coefficient of thermal expansion of the adjustment layer is smaller than that of at least one of the at least one first insulation layer of the first circuit structure and the at least one second insulation layer of the second circuit structure.

Abstract: An electronic device including a die and a connection structure electrically connected to the die is disclosed. The connection structure includes a first insulating layer including an opening, a second insulating layer, a first metal element disposed between the first insulating layer and the second insulating layer, a second metal element disposed in the opening and electrically connected to the first metal element, and a conductive element. The second metal element is electrically connected between the conductive element and the first metal element. A first surface and a second surface of the first insulating layer are contacted with the first metal element and the conductive element respectively. The first insulating layer includes first filling elements, the second insulating layer includes second filling elements, and in a cross-sectional view, a second maximum size of the second filling elements is greater than a first maximum size of the first filling elements.

Abstract: A method of manufacturing an electronic device includes providing a substrate with a predetermined first-hole region, a first surface, and a second surface. The second surface is opposite the first surface. The method includes laser processing the predetermined first-hole region from the first surface to form a first laser track and laser processing the predetermined first-hole region from the first surface to form a second laser track. The first laser track does not overlap the second laser track. The method further includes etching the predetermined first-hole region to form a first-hole.

Abstract: An electronic device is provided. The electronic device includes a substrate structure, a control unit, a first circuit structure, and an electronic unit. The substrate structure has a conductive via pattern and a dummy via pattern. The control unit is electrically connected to the conductive via pattern. The first circuit structure is electrically connected to the conductive via pattern. The electronic unit is electrically connected to the control unit through the first circuit structure. The dummy via pattern is electrically insulated from the first circuit structure.

Abstract: The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

Abstract: An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

Abstract: Provided herein are heterocyclic derivative compounds and tablet pharmaceutical compositions comprising said compounds that are useful for the treatment of retinal binding protein (RBP4) related diseases, such as macular degeneration and the like.

Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier substrate; forming a first base layer on the carrier substrate; forming a working unit on the first base layer, performing a detection step on the working unit to identify whether a defect is present, wherein the detection step includes automated optical inspection (AOI), electrical detection, or a combination thereof; and repairing the electronic device.

Abstract: An electronic device includes a first metal layer, a first insulating layer disposed on the first metal layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and an electronic component. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The electronic component is disposed on the fourth insulating layer and electrically connected to the fourth metal layer. A Young's modulus of the third insulating layer is less than a Young's modulus of the first insulating layer.

Abstract: An electronic component includes a first electronic unit including a plurality of pads, a first conductive layer, a second conductive layer, a first insulating layer having a first thickness, a second insulating layer having a second thickness, a second electronic unit, and a solder ball. The first conductive layer is disposed between the first electronic unit and the second conductive layer, and electrically connected to at least one of the pads through a conductive via. The first insulating layer is disposed between the first conductive layer and the second conductive layer. The second conductive layer is disposed between the first insulating layer and the second insulating layer. The first thickness is different from the second thickness. The second conductive layer is disposed between the first conductive layer and the second electronic unit. The second conductive layer is electrically connected to the second electronic unit through the solder ball.

Abstract: An electronic device includes a wafer, a redistribution layer and a multi-layer insulating structure. The redistribution layer is disposed on the wafer. The multi-layer insulating structure is disposed between the wafer and the redistribution layer. The multi-layer insulating structure includes a first layer and a second layer. A Young's modulus of the first layer is different from a Young's modulus of the second layer.

Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

Abstract: An electronic device includes a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and a conductive structure. The first insulating layer is disposed on the first metal layer. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The conductive structure is disposed on and electrically connected to the fourth insulating layer. A chemical resistance of the first insulating layer is greater than a chemical resistance of the fourth insulating layer.

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier, forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

Abstract: The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; a photoresist coating process; a development process; an etching process; an exposure process; a metal plating process; and a polishing process, wherein the photoresist coating process, the development process, the etching process, the exposure process, the metal plating process and the polishing process respectively have a maximum optimized process area, and a smallest one of the maximum optimized process areas is selected as the basic working area.

Abstract: An electronic component and a manufacturing method thereof are provided. The electronic component includes a structure member and a connecting member. The structure member includes at least one working unit. The at least one working unit is disposed in a first region. The connecting member is disposed on the structure member and includes a second region. The second region is overlapped with the first region, and a metal density of the second region is less than a metal density of the first region. The electronic component and the manufacturing method thereof of the embodiment of the disclosure include the effect of improving the reliability or quality of the electronic component.

Abstract: A manufacturing method of a package structure including the following steps is provided. A carrier is provided. An anti-warpage structure is formed on the carrier. And a redistribution layer is formed on the carrier. In the normal direction of the carrier, a warpage trend of the anti-warpage structure is opposite to a warpage trend of the redistribution layer.

Abstract: A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.