Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.

Abstract: A method for controlling a fan in a fan start-up stage including a first time period and a second time period comprises the following steps of: during the first time period, continuously providing a first driving signal to drive the fan; and during the second time period, continuously providing a second driving signal to drive the fan; wherein, the signal value of the first driving signal gradually decreases until being equal to the signal value of the second driving signal. Wherein the signal value of the first driving signal non-linearly decreases, the signal value of the second driving signal is an unchanged value. Wherein, the first time period and the second time period are adjusted for a different fan but the sum of the first time period and the second time period is always the same. A fan is also disclosed.

Abstract: A mobile device includes a housing, a first radiation element, a second radiation element, a third radiation element, a first switch element, and a second switch element. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The first radiation element, the second radiation element, and the third radiation element are distributed over the housing. The first switch element is closed or open, so as to selectively couple the first radiation element to the third radiation element. The second switch element is closed or open, so as to selectively couple the second radiation element to the third radiation element. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.

Abstract: An optical structure, comprising an optical film having a substrate, wherein a first plurality of multi-faceted recesses are formed on the top surface of the substrate, wherein a prism module is disposed over the first optical film, wherein the prism module comprises a plurality of prism sheets that are stacked and bonded to each other.

Abstract: An optical film, comprising a substrate, wherein a first plurality of multi-faceted recesses are formed on the substrate, wherein the plurality of multi-faceted recesses are capable of scattering lights that enter into a second surface of the substrate, said first surface and said second surface are two opposite surfaces of the substrate.

Abstract: A circuit board element includes a glass substrate, a first dielectric layer, and a first patterned metal layer. The glass substrate has an edge. The first dielectric layer is disposed on the glass substrate and has a central region and an edge region. The edge region is in contact with the edge of the glass substrate, and the thickness of the central region is greater than the thickness of the edge region. The first patterned metal layer is disposed on the glass substrate and in the central region of the first dielectric layer.

Abstract: A circuit board element includes a glass substrate, a first dielectric layer, and a first patterned metal layer. The glass substrate has an edge. The first dielectric layer is disposed on the glass substrate and has a central region and an edge region. The edge region is in contact with the edge of the glass substrate, and the thickness of the central region is greater than the thickness of the edge region. The first patterned metal layer is disposed on the glass substrate and in the central region of the first dielectric layer.

Abstract: A circuit board element includes a glass substrate, a first dielectric layer, and a first patterned metal layer. The glass substrate has an edge. The first dielectric layer is disposed on the glass substrate and has a central region and an edge region. The edge region is in contact with the edge of the glass substrate, and the thickness of the central region is greater than the thickness of the edge region. The first patterned metal layer is disposed on the glass substrate and in the central region of the first dielectric layer.

Abstract: A circuit board element includes a glass substrate, a first dielectric layer, and a first patterned metal layer. The glass substrate has an edge. The first dielectric layer is disposed on the glass substrate and has a central region and an edge region. The edge region is in contact with the edge of the glass substrate, and the thickness of the central region is greater than the thickness of the edge region. The first patterned metal layer is disposed on the glass substrate and in the central region of the first dielectric layer.