Abstract: A semiconductor device includes a first interconnect structure, a device layer, a second interconnect structure, a diamond layer, a passivation layer, and an electrical connector. The device layer is disposed over the first interconnect structure. The second interconnect structure is disposed over the device layer and comprises a topmost metallization pattern. The diamond layer is disposed over the second interconnect structure and at least revealing a part of the topmost metallization pattern. The passivation layer covers the diamond layer and reveals the part of the topmost metallization pattern. The electrical connector is disposed over the passivation layer and bonded to the part of the topmost metallization pattern.

Abstract: A semiconductor device includes a stacked structure, first conductive terminals and second conductive terminals. The stacked structure includes a first semiconductor component having a first area and a second semiconductor component stacked on the first semiconductor component and having a second area smaller than the first area, wherein an extending direction of the first area and an extending direction of the second area are perpendicular to a stacking direction of the first semiconductor component and the second semiconductor component. The first conductive terminals are located on the stacked structure, electrically coupled to the first semiconductor component and aside of the second semiconductor component. The second conductive terminals are located on the stacked structure and electrically coupled to the second semiconductor component.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via.

Abstract: A semiconductor device includes an optical connector element and an optical coupler. The optical connector element includes a base structure, a first polymer via and a cladding layer. The base structure has a first surface and a second surface opposite to the first surface. The first polymer via passes through the base structure from the first surface to the second surface. The cladding layer is surrounding the first polymer via, wherein a refractive index of the cladding layer is different than a refractive index of the first polymer via. The optical coupler is disposed over the optical connector element, wherein the optical coupler receives optical signals from the first polymer via.

Abstract: An integrated circuit package and the method of forming the same are provided. The integrated circuit package may comprise a substrate, a first package component bonded to the substrate and a first cooling system over the first package component. The first package component may comprise a first semiconductor die. The first cooling system may comprise a first base over the first package component, wherein the first base may comprise a first recess, a first pin protruding from a bottom of the first recess, and a first raised portion encircling the recess in a top-down view; a lid over the first base, wherein the lid may be spaced apart from the first pin; and a sealant connecting the lid to the first raised portion of the first base.

Abstract: A semiconductor package and a manufacturing method thereof is provided. The semiconductor package includes a first semiconductor die, including a substrate and transistors formed at a front side of the substrate; a power distribution network, spreading at a back side of the substrate and penetrating through the substrate, to provide power and ground signals to the transistors; a dielectric material, laterally surrounding the first semiconductor die; and a second semiconductor die, having a central portion bonded with the first semiconductor die and a peripheral portion in contact with the dielectric material.

Abstract: Semiconductor devices and methods of manufacture are presented herein. In accordance with some embodiments, a device includes a first semiconductor device, the first semiconductor device including a first interconnect structure, an integrated cooling structure bonded to the first interconnect structure, wherein the integrated cooling structure is configured for a working fluid to enter and exit the integrated cooling structure, a second semiconductor device including a second interconnect structure, the second semiconductor device bonded to the integrated cooling structure opposite the first interconnect structure, and a plurality of through substrate vias extending through the integrated cooling structure, wherein the plurality of through substrate vias electrically couple the first semiconductor device to the second semiconductor device.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via.

Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A package includes an electronic die, a photonic die underlying and electronically communicating with the electronic die, a lens disposed on the electronic die, and a prism structure disposed on the lens and optically coupled to the photonic die. The prism structure includes first and second polymer layers, the first polymer layer includes a first curved surface concaving toward the photonic die, the second polymer layer embedded in the first polymer layer includes a second curved surface substantially conforming to the first curved surface, and an outer sidewall of the second polymer layer substantially aligned with an outer sidewall of the first polymer layer.

Abstract: An integrated circuit package and a method of forming the same are provided. The integrated circuit package includes a photonic integrated circuit die. The photonic integrated circuit die includes an optical coupler. The integrated circuit package further includes an encapsulant encapsulating the photonic integrated circuit die, a first redistribution structure over the photonic integrated circuit die and the encapsulant, and an opening extending through the first redistribution structure and exposing the optical coupler.

Abstract: A package structure and a method for forming the same are provided. The package structure includes a first package structure and a second package structure. The first package structure includes a first device formed over a first substrate. The first device includes a first conductive plug connected to a through substrate via (TSV) structure formed in the first substrate. A buffer layer surrounds the first substrate. A first bonding layer is formed over the first substrate and the buffer layer. The second package structure includes a second device formed over a second substrate. A second bonding layer is formed over the second device. A hybrid bonding structure is between the first package structure and the second package structure by bonding the first bonding layer to the second bonding layer.

Abstract: A semiconductor package includes a first die stack structure and a second die stack structure, an insulating encapsulation, a redistribution structure, at least one prism structure and at least one reflector. The first die stack structure and the second die stack structure are laterally spaced apart from each other along a first direction, and each of the first die stack structure and the second die stack structure comprises an electronic die; and a photonic die electronically communicating with the electronic die. The insulating encapsulation laterally encapsulates the first die stack structure and the second die stack structure. The redistribution structure is disposed on the first die stack structure, the second die stack structure and the insulating encapsulation, and electrically connected to the first die stack structure and the second die stack structure. The at least one prism structure is disposed within the redistribution structure and optically coupled to the photonic die.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A supporting layer is formed over a redistribution structure. A first planarization process is performed over the supporting layer. A lower dielectric layer is formed over the supporting layer, wherein the lower dielectric layer includes a concave exposing a device mounting region of the supporting layer. A first sacrificial layer is formed over the supporting layer, wherein the sacrificial layer filling the concave. A second planarization process is performed over the lower dielectric layer and the first sacrificial layer. A transition waveguide provided over the lower dielectric layer. The first sacrificial layer is removed. A semiconductor device is mounted over the device mounting region, wherein the semiconductor device includes a device waveguide is optically coupled to the transition waveguide.

Abstract: A package includes an electronic die, a photonic die underlying and electronically communicating with the electronic die, a lens disposed on the electronic die, and a prism structure disposed on the lens and optically coupled to the photonic die. The prism structure includes first and second polymer layers, the first polymer layer includes a first curved surface concaving toward the photonic die, the second polymer layer embedded in the first polymer layer includes a second curved surface substantially conforming to the first curved surface, and an outer sidewall of the second polymer layer substantially aligned with an outer sidewall of the first polymer layer.

Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.

Abstract: A semiconductor package includes a first semiconductor die, a second semiconductor die, an insulating encapsulation, and a plurality of conductive pillars. The second semiconductor die is located on and electrically communicates to the first semiconductor die through joints therebetween. The insulating encapsulation encapsulates the first semiconductor die and the second semiconductor die and covers the joints. The plurality of conductive pillars is next to and electrically connected to the first semiconductor die and the second semiconductor die, and is covered by the insulating encapsulation.

Abstract: An integrated circuit package and a method of forming the same are provided. The integrated circuit package includes a photonic integrated circuit die. The photonic integrated circuit die includes an optical coupler. The integrated circuit package further includes an encapsulant encapsulating the photonic integrated circuit die, a first redistribution structure over the photonic integrated circuit die and the encapsulant, and an opening extending through the first redistribution structure and exposing the optical coupler.