Abstract: A multi-eyebox head-up display device and a multilayer combiner are disclosed. The device comprises a projector generates a projected image to a reflector. The reflector generates a reflected image to a multilayer combiner. The multilayer combiner includes at least two superimposed imaging plates, and the semi-reflective surfaces of the superimposed imaging plates are tilted to each other. While the reflected image is projected to the semi-reflective surface of the topmost superimposed imaging plate, the semi-reflective surface of the topmost superimposed imaging plate generates a virtual image. Simultaneously, the reflected image penetrates through the topmost superimposed imaging plate and reaches the lower superimposed imaging plate, and the semi-reflective surface of the lower superimposed imaging plate reflects the light to generate another virtual image. The present invention enables the driver to view the vehicular information at different viewing angles.

Abstract: A multi-eyebox head-up display device and a multilayer combiner are disclosed. The device comprises a projector generates a projected image to a reflector. The reflector generates a reflected image to a multilayer combiner. The multilayer combiner includes at least two superimposed imaging plates, and the semi-reflective surfaces of the superimposed imaging plates are tilted to each other. While the reflected image is projected to the semi-reflective surface of the topmost superimposed imaging plate, the semi-reflective surface of the topmost superimposed imaging plate generates a virtual image. Simultaneously, the reflected image penetrates through the topmost superimposed imaging plate and reaches the lower superimposed imaging plate, and the semi-reflective surface of the lower superimposed imaging plate reflects the light to generate another virtual image. The present invention enables the driver to view the vehicular information at different viewing angles.

Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

Abstract: An organic light emitting display (OLED) includes a voltage adjustment unit for adjusting a preliminary control voltage according to a second reference voltage, a couple unit for coupling a change of the preliminary control voltage to adjust a control voltage, a driving unit for providing a driving current and a driving voltage according to the control voltage, a first reset unit for resetting the driving voltage according to a first reference voltage, a second reset unit for resetting the control voltage according to the driving voltage, an organic light emitting diode for generating output light according to the driving current, and an emission enable unit for providing a control of furnishing the driving current to the organic light emitting diode. Through the circuit operation of the reset units and the voltage adjustment unit, occurrences of image retention phenomenon and pixel brightness distortion on the OLED screen can be avoided.

Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

Abstract: An organic light emitting display (OLED) includes a voltage adjustment unit for adjusting a preliminary control voltage according to a second reference voltage, a couple unit for coupling a change of the preliminary control voltage to adjust a control voltage, a driving unit for providing a driving current and a driving voltage according to the control voltage, a first reset unit for resetting the driving voltage according to a first reference voltage, a second reset unit for resetting the control voltage according to the driving voltage, an organic light emitting diode for generating output light according to the driving current, and an emission enable unit for providing a control of furnishing the driving current to the organic light emitting diode. Through the circuit operation of the reset units and the voltage adjustment unit, occurrences of image retention phenomenon and pixel brightness distortion on the OLED screen can be avoided.

Abstract: A thin film transistor device and method of making the same are provided. The thin film transistor device includes a crystalline semiconductor layer and a patterned heavily doped semiconductor layer. The patterned heavily doped semiconductor layer includes a first heavily doped semiconductor layer and a second heavily doped semiconductor layer. The first heavily doped semiconductor layer covers a first side surface and a portion of a top surface of the crystalline semiconductor layer; the second heavily doped semiconductor layer covers a second side surface and a portion of the top surface of the crystalline semiconductor layer.