Abstract: A controlling method for semiconductor process auxiliary apparatus, a control assembly and a manufacturing system are provided. The controlling method includes the following steps. At least one manufacturing parameter of a semiconductor manufacturing processing apparatus are obtained. An energy adjusting signal is generated according to the manufacturing parameter. An auxiliary apparatus controlling signal is generated according to the energy adjusting signal. The semiconductor process auxiliary apparatus is controlled according to the semiconductor auxiliary apparatus controlling signal.

Abstract: Some embodiments relate to an integrated circuit (IC) device including a substrate having first photodetector groups respectively associated with a plurality of color pixels and second photodetector groups respectively associated with a plurality of phase detection pixels. Each of the first and second photodetector groups includes one or more photodetectors. The device further includes a grid structure over the substrate, color filters over the substrate, and a crosstalk reduction structure. The grid structure includes light shields, each configured to redirect light away from a corresponding one of the second photodetector groups. Each color filter vertically spans the grid structure at a corresponding one of the first photodetector groups. The crosstalk reduction structure is level with the color filters and limits an amount of the light redirected by the light shield of each of the phase detection pixels to the first photodetector group of a neighboring one of the color pixels.

Abstract: Semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a first source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line, the first conductive line defining a first side boundary of the air spacer.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: A semiconductor structure includes a source/drain (S/D) region, one or more dielectric layers over the S/D region, one or more semiconductor channel layers connected to the S/D region, an isolation structure under the S/D region and the one or more semiconductor channel layers, and a via under the S/D region and electrically connected to the S/D region. A lower portion of the via is surrounded by the isolation structure and an upper portion of the via extends vertically between the S/D region and the isolation structure.

Abstract: A semiconductor structure includes an isolation structure, a source/drain region over the isolation structure, a gate structure over the isolation structure and adjacent to the source/drain region, an interconnect layer over the source/drain region and the gate structure, an isolating layer below the gate structure, and a contact structure under the source/drain region. The contact structure has a first portion and a second portion. The first portion is below the second portion. The second portion extends through the isolating layer and protrudes above the isolating layer. A portion of the isolating layer is vertically between the gate structure and the first portion of the contact structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a stack of semiconductor nanostructures over a base structure and a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. The semiconductor device structure also includes a gate stack wrapped around each of the semiconductor nanostructures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. The semiconductor device structure further includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A plurality of holes in a top surface of a silicon medium form a plurality of sub-meta lenses to result in multiple focal points rather than a single point (resulting from using a single meta lens). As a result, optical paths for incoming light are reduced as compared with a single optical path associated with a single meta lens, which in turn reduces angular response of incident photons. Thus, a pixel sensor including the plurality of sub-meta lenses experiences improved light focus and greater signal-to-noise ratio. Additionally, dimensions of the pixel sensor are reduced (particularly a height of the pixel sensor), which allows for greater miniaturization of an image sensor that includes the pixel sensor.

Abstract: A method includes receiving a substrate having a front side and a back side, forming a shallow trench in the substrate from the front side, forming a liner layer including a first dielectric material in the shallow trench, depositing a second dielectric material different from the first dielectric material on the liner layer to form an isolation feature in the shallow trench, forming an active region surrounded by the isolation feature, forming a gate stack on the active region, forming a source/drain (S/D) feature on the active region and on a side of the gate stack, thinning down the substrate from the back side such that the isolation feature is exposed, etching the active region to expose the S/D feature from the back side to form a backside trench, and forming a backside via feature landing on the S/D feature and surrounded by the liner layer.

Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic element stacking structure is disposed on a carrier structure to integrate multiple chips into a single package, so that the electronic package can meet with the requirements of miniaturization without increasing the layout area of the carrier structure.

Abstract: An integrated circuit includes a substrate at a front side of the integrated circuit. A first gate all around transistor is disposed on the substrate. The first gate all around transistor includes a channel region including at least one semiconductor nanostructure, source/drain regions arranged at opposite sides of the channel region, and a gate electrode. A shallow trench isolation region extends into the integrated circuit from the backside. A backside gate plug extends into the integrated circuit from the backside and contacts the gate electrode of the first gate all around transistor. The backside gate plug laterally contacts the shallow trench isolation region at the backside of the integrated circuit.

Abstract: A method for forming an indium gallium nitride quantum well structure is disclosed. The method includes forming a gallium nitride microdisk on a substrate, with the gallium nitride microdisk having an inverted pyramid form and an end face; and forming multiple quantum well layers on the end face, with each quantum well layer including an indium gallium nitride quantum well and a barrier layer. The indium gallium nitride quantum well is grown at a growth temperature adjusted using a trend equation within a temperature range of 480° C. to 810° C.

Abstract: The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain epitaxial features; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside; and a dielectric liner filling a space between the two metal plugs, wherein the dielectric liner partially or fully surrounds an air gap between the two metal plugs.

Abstract: A package structure and a method for forming the same are provided. The package structure includes a first package structure and a second package structure. The first package structure includes a first device formed over a first substrate. The first device includes a first conductive plug connected to a through substrate via (TSV) structure formed in the first substrate. A buffer layer surrounds the first substrate. A first bonding layer is formed over the first substrate and the buffer layer. The second package structure includes a second device formed over a second substrate. A second bonding layer is formed over the second device. A hybrid bonding structure is between the first package structure and the second package structure by bonding the first bonding layer to the second bonding layer.

Abstract: A hypochlorous acid preparation system is provided. The hypochlorous acid preparation system includes: a hypochlorous acid preparation apparatus comprising: a first inlet, wherein sulfuric acid collected from a clean room located in a semiconductor fabrication plant enters the hypochlorous acid preparation apparatus through the first inlet; a second inlet, wherein sodium hypochlorite solution enters the hypochlorous acid preparation apparatus through the second inlet; a third inlet, wherein deionized water enters the hypochlorous acid preparation apparatus through the third inlet; and an outlet, wherein hypochlorous acid is produced in situ by mixing the sulfuric acid, the sodium hypochlorite solution, and the deionized water and exits the hypochlorous acid preparation apparatus through the outlet.

Abstract: An integrated circuit includes a substrate at a front side of the integrated circuit. A first gate all around transistor is disposed on the substrate. The first gate all around transistor includes a channel region including at least one semiconductor nanostructure, source/drain regions arranged at opposite sides of the channel region, and a gate electrode. A shallow trench isolation region extends into the integrated circuit from the backside. A backside gate plug extends into the integrated circuit from the backside and contacts the gate electrode of the first gate all around transistor. The backside gate plug laterally contacts the shallow trench isolation region at the backside of the integrated circuit.

Abstract: A semiconductor device includes a substrate having fins and trenches in between the fins, a plurality of insulators, a first metal layer, an insulating layer, a second metal layer and an interlayer dielectric. The insulators are disposed within the trenches of the substrate. The first metal layer is disposed on the plurality of insulators and across the fins. The insulating layer is disposed on the first metal layer over the plurality of insulators and across the fins. The second metal layer is disposed on the insulating layer over the plurality of insulators and across the fins. The interlayer dielectric is disposed on the insulators and covering the first metal layer, the insulating layer and the second metal layer.

Abstract: An event detection controller for a circuit system controlled by a pulse wave modulation signal, can perform a specific event handling when a specific event is detected, wherein the specific event handling includes stopping a pulse wave modulation device, starting up the stopped pulse wave modulation device, controlling the pulse wave modulation device to change the pulse wave modulation signal, outputting a wake-up signal to wake up the circuit system, controlling the pulse detector to change its detection configuration, changing a cumulative occurrences number of the specific pattern of an event discrimination module, outputting a control signal or a first data signal to a peripheral device through a bus connected to an event response module and/or requesting the peripheral device to send a second data signal through the bus.

Abstract: An event detection controller for a circuit system controlled by a pulse wave modulation signal, can perform a specific event handling when a specific event is detected, wherein the specific event handling includes stopping a pulse wave modulation device, starting up the stopped pulse wave modulation device, controlling the pulse wave modulation device to change the pulse wave modulation signal, outputting a wake-up signal to wake up the circuit system, controlling the pulse detector to change its detection configuration, changing a cumulative occurrences number of the specific pattern of an event discrimination module, outputting a control signal or a first data signal to a peripheral device through a bus connected to an event response module and/or requesting the peripheral device to send a second data signal through the bus.