Patents by Inventor Cheng-Chun LAN

Cheng-Chun LAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8957452
    Abstract: A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: February 17, 2015
    Assignee: Lextar Electronics Corporation
    Inventors: Cheng-Chun Lan, Tzu-Hung Chou, Chi-Chung Chao
  • Publication number: 20140377899
    Abstract: A light emitting diode chip manufacturing method includes the following steps: a substrate is provided. A first semiconductor layer is formed on the substrate. A light-emitting layer is formed on a portion of the first semiconductor layer, and the surface of the first semiconductor layer not covered by the light-emitting layer is exposed. A second semiconductor layer is formed on the light-emitting layer. A hard shielding layer is formed on the second semiconductor layer and the exposed surface of the first semiconductor layer, such that a multi-layer stacked structure is formed on the substrate. A cutting treatment is performed. An etching treatment is performed. The hard shielding layer is patterned to form a current blocking layer on the second semiconductor layer, and the current blocking layer is made of the hard shielding layer.
    Type: Application
    Filed: December 30, 2013
    Publication date: December 25, 2014
    Applicant: Lextar Electronics Corporation
    Inventors: Tzu Hung CHOU, Cheng Chun LAN, Chi Chung CHAO
  • Publication number: 20140374767
    Abstract: A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.
    Type: Application
    Filed: February 25, 2014
    Publication date: December 25, 2014
    Applicant: Lextar Electronics Corporation
    Inventors: Cheng-Chun LAN, Tzu-Hung CHOU, Chi-Chung CHAO