Patents by Inventor Cheng-Chun Tsai
Cheng-Chun Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240113071Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.Type: ApplicationFiled: January 5, 2023Publication date: April 4, 2024Inventors: Chung-Shi Liu, Mao-Yen Chang, Yu-Chia Lai, Kuo-Lung Pan, Hao-Yi Tsai, Ching-Hua Hsieh, Hsiu-Jen Lin, Po-Yuan Teng, Cheng-Chieh Wu, Jen-Chun Liao
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Patent number: 11935871Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.Type: GrantFiled: August 30, 2021Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hao-Yi Tsai, Cheng-Chieh Hsieh, Tsung-Hsien Chiang, Hui-Chun Chiang, Tzu-Sung Huang, Ming-Hung Tseng, Kris Lipu Chuang, Chung-Ming Weng, Tsung-Yuan Yu, Tzuan-Horng Liu
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Patent number: 11916131Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.Type: GrantFiled: November 4, 2020Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: De-Fang Chen, Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chun-Hung Lee, Ming-Ching Chang, Huan-Just Lin
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Publication number: 20230411373Abstract: A semiconductor package includes a first electric integrated circuit component, a second integrated circuit component, and a first plasmonic bridge. The second electric integrated circuit component is aside the first electric integrated circuit component. The first plasmonic bridge is vertically overlapped with both the first electric integrated circuit component and the second electric integrated circuit component. The first plasmonic bridge includes a first plasmonic waveguide optically connecting the first electric integrated circuit component and the second electric integrated circuit component.Type: ApplicationFiled: August 4, 2023Publication date: December 21, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Patent number: 11830861Abstract: A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver, the second optical transceiver, and the third optical transceiver are stacked in sequential order. The first optical transceiver and the third optical transceiver respectively at least one optical input/output portion for transmitting and receiving an optical signal. The plasmonic waveguide includes a first segment, a second segment, and a third segment optically coupled to one another. The first segment is embedded in the first optical transceiver. The second segment extends through the second optical transceiver. The third segment is embedded in the third optical transceiver. The first segment is optically coupled to the at least one optical input/output portion of the first optical transceiver and the third segment is optically coupled to the at least one optical input/output portion of the third optical transceiver.Type: GrantFiled: September 23, 2020Date of Patent: November 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Publication number: 20210086472Abstract: A composite container includes a barrel, a bottom cover, and a top cover. The barrel is formed by thermoforming of a rolled-up first plate composed of laminated prepregs. The bottom cover is formed by thermoforming of a second plate composed of laminated prepregs. The top cover is formed by thermoforming of a third plate composed of laminated prepregs. The bottom cover includes a first bottom and a first flange. The top cover includes a second bottom and a second flange. The second bottom is formed with a through hole. The bottom cover and the top cover are arranged at two ends of the barrel respectively, and the first flange and the second flange are positioned to the peripheral wall of the barrel by thermoforming.Type: ApplicationFiled: September 24, 2019Publication date: March 25, 2021Inventors: SHAO-CHEN CHIU, TSUNG-YING LIN, YU-CHEN LIN, CHENG-CHIU LIU, CHENG-CHUN TSAI
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Patent number: 10914895Abstract: A package structure including a plurality of first dies and an insulating encapsulant is provided. The plurality of first dies each include a first waveguide layer having a first waveguide path of a bent pattern, wherein the first waveguide layers of the plurality of first dies are optically coupled to each other to form an optical route. The insulating encapsulant encapsulates the plurality of first dies.Type: GrantFiled: September 18, 2018Date of Patent: February 9, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Publication number: 20210005591Abstract: A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver, the second optical transceiver, and the third optical transceiver are stacked in sequential order. The first optical transceiver and the third optical transceiver respectively at least one optical input/output portion for transmitting and receiving an optical signal. The plasmonic waveguide includes a first segment, a second segment, and a third segment optically coupled to one another. The first segment is embedded in the first optical transceiver. The second segment extends through the second optical transceiver. The third segment is embedded in the third optical transceiver. The first segment is optically coupled to the at least one optical input/output portion of the first optical transceiver and the third segment is optically coupled to the at least one optical input/output portion of the third optical transceiver.Type: ApplicationFiled: September 23, 2020Publication date: January 7, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Patent number: 10797031Abstract: A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The second optical transceiver is stacked on the first optical transceiver. The third optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The third optical transceiver is stacked on the second optical transceiver. The plasmonic waveguide penetrates through the second optical transceiver and optically couples the at least one optical input/output portion of the first optical transceiver and the at least one optical input/output portion of the third optical transceiver.Type: GrantFiled: September 20, 2018Date of Patent: October 6, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Publication number: 20200098736Abstract: A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The second optical transceiver is stacked on the first optical transceiver. The third optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The third optical transceiver is stacked on the second optical transceiver. The plasmonic waveguide penetrates through the second optical transceiver and optically couples the at least one optical input/output portion of the first optical transceiver and the at least one optical input/output portion of the third optical transceiver.Type: ApplicationFiled: September 20, 2018Publication date: March 26, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Publication number: 20200091124Abstract: A package structure including a plurality of first dies and an insulating encapsulant is provided. The plurality of first dies each include a first waveguide layer having a first waveguide path of a bent pattern, wherein the first waveguide layers of the plurality of first dies are optically coupled to each other to form an optical route. The insulating encapsulant encapsulates the plurality of first dies.Type: ApplicationFiled: September 18, 2018Publication date: March 19, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Patent number: 10333623Abstract: An optical transceiver including a photonic integrated circuit component, an electric integrated circuit component and an insulating encapsulant is provided. The photonic integrated circuit component includes at least one optical input/output portion configured to transmit and receive optical signal. The electric integrated circuit component is disposed on and electrically connected to the photonic integrated circuit component. The insulating encapsulant covers the at least one optical input/output portion of the photonic integrated circuit component. The insulating encapsulant laterally encapsulates the electric integrated circuit component. The insulating encapsulant is optically transparent to the optical signal.Type: GrantFiled: June 25, 2018Date of Patent: June 25, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Kuang Liao, Cheng-Chun Tsai, Chen-Hua Yu, Fang-Cheng Chen, Wen-Chih Chiou, Ping-Jung Wu
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Patent number: 10269761Abstract: A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.Type: GrantFiled: March 20, 2017Date of Patent: April 23, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Chun Tsai, Hung-Pin Chang, Ku-Feng Yang, Yi-Hsiu Chen, Wen-Chih Chiou
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Publication number: 20170194286Abstract: A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.Type: ApplicationFiled: March 20, 2017Publication date: July 6, 2017Inventors: Cheng-Chun Tsai, Hung-Pin Chang, Ku-Feng Yang, Yi-Hsiu Chen, Wen-Chih Chiou
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Patent number: 9601410Abstract: A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.Type: GrantFiled: January 7, 2015Date of Patent: March 21, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Chun Tsai, Hung-Pin Chang, Ku-Feng Yang, Yi-Hsiu Chen, Wen-Chih Chiou
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Patent number: 9508815Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.Type: GrantFiled: October 23, 2015Date of Patent: November 29, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fu-An Li, Cheng-Chun Tsai, Ting-Hsien Chen, Mu-Kai Tung, Ben-Zu Wang, Po-Jen Shih, Hung-Hsin Liang
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Publication number: 20160197029Abstract: A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.Type: ApplicationFiled: January 7, 2015Publication date: July 7, 2016Inventors: Cheng-Chun Tsai, Hung-Pin Chang, Ku-Feng Yang, Yi-Hsiu Chen, Wen-Chih Chiou
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Publication number: 20160056255Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.Type: ApplicationFiled: October 23, 2015Publication date: February 25, 2016Inventors: Fu-An LI, Cheng-Chun TSAI, Ting-Hsien CHEN, Mu-Kai TUNG, Ben-Zu WANG, Po-Jen SHIH, Hung-Hsin LIANG
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Patent number: 9202809Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.Type: GrantFiled: February 6, 2014Date of Patent: December 1, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fu-An Li, Cheng-Chun Tsai, Ting-Hsien Chen, Mu-Kai Tung, Ben-Zu Wang, Po-Jen Shih, Hung-Hsin Liang
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Publication number: 20150221640Abstract: A semiconductor device is provided including a substrate and a plurality of gate stacks. The gate stack includes a dielectric layer disposed on the substrate, a first capping layer disposed on the dielectric layer, a second capping layer disposed on the first capping layer, and a gate electrode layer covering the second capping layer. The first capping layer having a roughened surface may enhance the formation of the second capping layer. The second capping layer has a bottom portion and a sidewall portion, and the thickness of the bottom portion is formed to be greater than the thickness of the sidewall portion, so that the dielectric property of the second capping layer may be significantly improved. Further, a method for manufacturing the semiconductor device also provides herein.Type: ApplicationFiled: February 6, 2014Publication date: August 6, 2015Applicant: Taiwan Semiconductor Manufacturing CO., LTD.Inventors: Fu-An Li, Cheng-Chun Tsai, Ting-Hsien Chen, Mu-Kai Tung, Ben-Zu Wang, Po-Jen Shih, Hung-Hsin Liang