Abstract: A light-transmitting antenna includes a substrate, a first and a second conductive pattern. The first and the second conductive pattern is disposed on a first and a second surface of the substrate respectively. The first conductive pattern includes a first feeder unit, a first and a second radiation unit, a first and a second coupling unit and a first parasitic unit. The first feeder unit is connected to the second radiation unit. The first and the second radiation unit are located between the first and the second coupling unit. One side and the other side of the first parasitic unit is connected to the second coupling unit and adjacent to the first coupling unit respectively. The second conductive pattern includes a second feeder unit, a third coupling unit, a second parasitic unit, and a fourth coupling unit.

Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.

Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes providing a substrate for an interposer, and forming a conductive interconnect structure in and on the substrate for connecting a group of selected IC dies. The method includes forming warpage-reducing trenches in non-routing regions of the interposer, wherein the warpage-reducing trenches are sized and positioned based on a warpage characteristic to reduce the warpage of the chip package structure. The method also includes depositing a warpage-relief material in the warpage-reducing trenches according to the warpage characteristic to reduce the warpage of the chip package structure, and bonding the group of selected IC dies to the interposer to form a chip package structure.

Abstract: An inflatable product includes an inflatable chamber and a supplemental layer. The supplemental layer is disposed on the inflatable chamber. Further, the supplemental layer is directly or indirectly fixed to the inflatable chamber by sewing. The inflatable chamber is made of plastic. The material of the supplemental layer is different from that of the inflatable chamber.

Abstract: An overhead hoist transfer (OHT) apparatus, a guiding device of the OHT apparatus, and a direction maintaining module of the OHT apparatus are provided. The direction maintaining module includes a main channel, a first retaining channel and a second retaining channel that are spaced apart from the main channel, a switch channel, and a switching mechanism connected to the switch channel. The switch channel is disposed among the main channel, the first channel, and the second channel. The switching mechanism is configured to drive the switch channel to move between a turning position and a straight position. When the switch channel is at the turning position, the switch channel connects the main channel and the first retaining channel. When the switch channel is at the straight position, the switch channel connects the main channel and the second retaining channel.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. The data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. The first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. A second conductive structure overlies the data storage structure.

Abstract: Embodiments of a vehicle interior system are disclosed. In one or more embodiments, the system includes a base with a curved surface, and a display or touch panel disposed on the curved surface. The display includes a cold-bent glass substrate with a thickness of 1.5 mm or less and a first radius of curvature of 20 mm or greater, and a display module and/or touch panel attached to the glass substrate having a second radius of curvature that is within 10% of the first radius of curvature. Methods for forming such systems are also disclosed.

Abstract: A media item to be provided to users of a platform is identified. The media item is associated with a media class of one or more media classes. An indication of the media item is provided as input to a machine learning model trained based on historical encoding data to predict, for a given media item, a set of encoder parameter settings that satisfy a performance criterion in view of a respective media class of the given media item. The historical encoding data includes a prior set of encoder parameter settings that satisfied the performance criterion with respect to a prior media item associated with the respective class. Encoder parameter settings that satisfy the performance criterion in view of the media class is determined based on an output of the model. The media item is caused to be encoded using the determined encoder parameter settings.

Abstract: An overhead hoist transfer (OHT) apparatus and a differential overhead trolley thereof are provided. The OHT apparatus includes a rail module and a differential overhead trolley. The rail module includes a main rail and a first rail, and defines a turning path extending from the main rail to the first rail. The differential overhead trolley is movably disposed on the rail module, and includes a walking mechanism and a carrying body that is hung on the rail module by being connected to the walking mechanism. The walking mechanism includes two differential wheels and a driving unit that is connected to the two differential wheels. When the differential overhead trolley is moved along the turning path, the driving unit is configured to drive the two differential wheels to move along the first rail by different rolling velocities.

Abstract: An electronic device includes: a substrate; and a transistor disposed on the substrate, wherein the transistor includes: a gate electrode; a semiconductor layer at least partially overlapping the gate electrode, wherein the semiconductor layer includes a first sub-semiconductor layer and a second sub-semiconductor layer disposed on the first sub-semiconductor layer, and the second sub-semiconductor layer includes indium, gallium and zinc; a drain electrode electrically connected to the semiconductor layer; and a source electrode electrically connected to the semiconductor layer, wherein in the second sub-semiconductor layer, an atomic percentage of indium is less than an atomic percentage of gallium, and the atomic percentage of gallium is less than an atomic percentage of zinc.

Abstract: Various embodiments of the present disclosure are directed towards a memory device. The memory device has a first transistor having a first source/drain and a second source/drain, where the first source/drain and the second source/drain are disposed in a semiconductor substrate. A dielectric structure is disposed over the semiconductor substrate. A first memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the first memory cell has a first electrode and a second electrode, where the first electrode of the first memory cell is electrically coupled to the first source/drain of the first transistor. A second memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the second memory cell has a first electrode and a second electrode, where the first electrode of the second memory cell is electrically coupled to the second source/drain of the first transistor.

Abstract: Provided is a system that includes at least one processor programmed or configured to receive an XML data file, wherein the XML data file includes data associated with one or more input parameters of a machine learning model, generate a code generation template based on the data associated with one or more input parameters of the machine learning model included in the XML file, where the code generation template includes one or more keys associated with one or more parameters of a transaction aggregate for an account of a user, and generate a file of executable code based on the code generation template, wherein the file of executable code includes instructions that, when executed by at least one processor, causes at least one processor to retrieve transaction aggregate data associated with the transaction aggregate for the account of the user. A method and computer program product are also provided.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: The present disclosure concerns lithium zirconium phosphate (LZP) chemical oxides for coated cathode active materials, which are useful in cathodes (i.e., positive electrodes) of rechargeable lithium-batteries for reversibly storing lithium ions (Li+).

Abstract: A voltage regulator having a multiple of main stages and at least one accelerated voltage regulator (AVR) bridge is provided. The main stages may respond to low frequency current transients and provide DC output voltage regulation. The AVR bridges are switched much faster than the main stages and respond to high frequency current transients without regulating the DC output voltage. The AVR bridge frequency response range can overlap with the main stage frequency response range, and the lowest frequency to which the AVR bridges respond may be set lower than the highest frequency to which the main stages respond.

Abstract: A light-transmitting antenna includes a substrate, a first conductive pattern, and a second conductive pattern. The first conductive pattern has a first feeder unit, a first radiation unit, a second radiation unit, and a first connection unit. The first feeder unit and the first connection unit are connected to two sides of the first radiation unit. The first connection unit connects the first radiation unit and the second radiation unit. The second conductive pattern has a second feeder unit, a third radiation unit, a fourth radiation unit, and a second connection unit. The second feeder unit and the second connection unit are connected to two sides of the third radiation unit. The second connection unit connects the third radiation unit and the fourth radiation unit. An orthogonal projection of the second feeder unit on a first surface of the substrate at least partially overlaps the first feeder unit.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: Disclosed herein is a complex, a contrast agent and the method for treating a disease related to CXCR4 receptor. The complex is configured to bind the CXCR4 receptor, and is used as a medicament for diagnosis and treatment of cancers and other indications related to the CXCR4 receptor.