Patents by Inventor Cheng-Chung Hsieh
Cheng-Chung Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11973040Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes providing a substrate for an interposer, and forming a conductive interconnect structure in and on the substrate for connecting a group of selected IC dies. The method includes forming warpage-reducing trenches in non-routing regions of the interposer, wherein the warpage-reducing trenches are sized and positioned based on a warpage characteristic to reduce the warpage of the chip package structure. The method also includes depositing a warpage-relief material in the warpage-reducing trenches according to the warpage characteristic to reduce the warpage of the chip package structure, and bonding the group of selected IC dies to the interposer to form a chip package structure.Type: GrantFiled: December 9, 2021Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Yang Hsieh, Chien-Chang Lee, Chia-Ping Lai, Wen-Chung Lu, Cheng-Kang Huang, Mei-Shih Kuo, Alice Huang
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Patent number: 7495253Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: GrantFiled: July 27, 2007Date of Patent: February 24, 2009Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Publication number: 20080157070Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.Type: ApplicationFiled: January 18, 2008Publication date: July 3, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Cheng-Chung Hsieh, Liang-Ying Huang, Tarng-Shiang Hu, Cheng-Chung Lee
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Patent number: 7344914Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.Type: GrantFiled: June 10, 2005Date of Patent: March 18, 2008Assignee: Industrial Technology Research InstituteInventors: Cheng-Chung Hsieh, Liang-Ying Huang, Tarng-Shiang Hu, Cheng-chung Lee
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Publication number: 20080035918Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: ApplicationFiled: July 27, 2007Publication date: February 14, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Patent number: 7264989Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: GrantFiled: May 7, 2004Date of Patent: September 4, 2007Assignee: Industrial Technology Research InstituteInventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Publication number: 20070057252Abstract: The present invention provides a method for fabricating an organic thin film transistor (OTFT) device where a vertical contact hole is produced in the insulating layer and the passivation layer thereof, so that the respective devices located below and above the OTFT would be electrically connected with each other. The provided OTFT device includes a substrate, a gate layer located on the substrate, an insulating layer located on the gate layer, an electrode layer located on the insulating layer and having a source region and a drain region, an organic semiconductor layer located between the source region and the drain region, a passivation layer patterned and located on the source region, the drain region and the organic semiconductor layer, and a contact hole passing through the passivation layer to one of the source region and the drain region.Type: ApplicationFiled: March 3, 2006Publication date: March 15, 2007Applicant: Industrial Technology Research InstituteInventors: Cheng-Chung Hsieh, Tarng-Shiang Hu, Jia-Chong Ho, Ming-Chun Hsiao
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Patent number: 7125742Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.Type: GrantFiled: June 9, 2004Date of Patent: October 24, 2006Assignee: Industrial Technology Research InstituteInventors: Cheng-Chung Hsieh, Jia-Chong Ho, Tarng-Shiang Hu, Cheng-Chung Lee, Liang-Ying Huang, Wei-Ling Lin, Wen-Kuei Huang
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Publication number: 20060186398Abstract: An organic semiconductor device with multiple protective layers and the method of making the same are described. A first protective layer is formed by vapor phase deposition on an organic thin-film transistor. A second protective layer is then formed on the first protective layer. Therefore, the organic thin-film transistor is formed with multiple protective layers. Not only do these protective layers have good homogeneity, they can protect the organic thin-film transistor from damages, ensuring good quality.Type: ApplicationFiled: June 24, 2005Publication date: August 24, 2006Inventors: Cheng-Chung Hsieh, Tarng-Shiang Hu, Jia-Chong Ho, Cheng-Chung Lee
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Publication number: 20060180808Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.Type: ApplicationFiled: June 10, 2005Publication date: August 17, 2006Inventors: Cheng-Chung Hsieh, Liang-Ying Huang, Tarng-Shiang Hu, Cheng-chung Lee
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Publication number: 20050227407Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.Type: ApplicationFiled: June 9, 2004Publication date: October 13, 2005Inventors: Cheng-Chung Hsieh, Jia-Chong Ho, Tarng-Shiang Hu, Cheng-Chung Lee, Liang-Ying Huang, Wei-Ling Lin, Wen-Kuei Huang
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Publication number: 20050194615Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.Type: ApplicationFiled: May 7, 2004Publication date: September 8, 2005Inventors: Liang-Ying Huang, Jia-Chong Ho, Cheng-Chung Lee, Tarng-Shiang Hu, Wen-Kuei Huang, Wei-Ling Lin, Cheng-Chung Hsieh
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Publication number: 20030077917Abstract: A method of fabricating a void-free barrier layer located on a semiconductor substrate. First, conductive structures are defined on the semiconductor substrate. Second, a barrier layer is deposited over the conductive structures, wherein the barrier layer has a void between the conductive structures. Third, argon gas is introduced into a HDPCVD chamber to sputter the barrier layer so that the void is eliminated.Type: ApplicationFiled: October 22, 2001Publication date: April 24, 2003Inventors: Ping-Wei Lin, Ming-Kuan Kao, Cheng Chung Hsieh