Abstract: The present disclosure provides a display device including a light emitting diode and a driving module. The driving module drives the light emitting diode. The driving module includes a first switch circuit, a second switch circuit, and a driver transistor. The first switch circuit selectively writes a gray scale voltage in a first capacitor. The second switch circuit selectively writes an offset voltage in a second capacitor. The driver transistor is coupled to the light emitting diode, the first capacitor, and the second capacitor. The driver transistor adjusts a driving current being outputted to the light emitting diode according to the gray scale voltage and the offset voltage. The gray scale voltage adjusts the voltage difference between the gate and the source of the driver transistor, while the offset voltage adjusts a threshold voltage of the driver transistor.

Abstract: A display apparatus includes a display panel and a driving module. The driving module is electrically connected with the display panel and has an image processing circuit and a data driving circuit. The image processing circuit receives a first image signal of a frame time. When an average gray level of the first image signal is greater than or equal to a first setting gray level, the image processing circuit reduces gray levels of the first image signal according to a first ratio to obtain a second image signal. The data driving circuit receives the second image signal and drives the display panel to display an image according to the second image signal. An image control method of the display panel is also disclosed.

Abstract: The present invention discloses a semiconductor manufacturing method. The method for activating a p-type impurity doped in a semiconductor element in a chamber comprises that a vacuum pressure is exerted to the chamber first, and the semiconductor element is heated to a preset temperature and the heating is persisted for a preset period to activate the p-type impurity doped in the semiconductor element.

Abstract: The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity.

Abstract: An amplifier includes a first comparator, a second comparator, and an output switch. The first and second comparators respectively compare a pair of differential signals with a half-swing modulation signal to generate first and second pulse-width-modulation (PWM) control signals, wherein a voltage swing of the half-swing modulation signal is smaller than voltage swing of the differential signals. The output switch includes a pair of inputs coupled to receive the PWM control signals to provide a ternary encoded output signal in response to the PWM control signals.

Abstract: An amplifier includes a first comparator, a second comparator, and an output switch. The first and second comparators respectively compare a pair of differential signals with a half-swing modulation signal to generate first and second pulse-width-modulation (PWM) control signals, wherein a voltage swing of the half-swing modulation signal is smaller than voltage swing of the differential signals. The output switch includes a pair of inputs coupled to receive the PWM control signals to provide a ternary encoded output signal in response to the PWM control signals.

Abstract: A power output device includes a bridged output stage, a reference voltage generator and a detecting unit to compare the output voltages from the aforementioned two units. The bridged output stage may be implemented by a full-bridge or a half-bridge configuration. The reference voltage generator is symmetric to the bridged output stage to generate a reference voltage, which is served as a reference voltage range for the voltage difference of the two terminals of the turned-on transistors in the bridged output stage during operation. When the detecting unit detects the voltages across the two terminals of the turned-on transistors in the bridged output stage exceed the reference voltage range, all the transistors are turned off and no power is outputted to the load. Therefore, the circuit is capable of preventing damages caused by a large current due to overload or short circuit.

Abstract: A power output device includes a bridged output stage, a reference voltage generator and a detecting unit to compare the output voltages from the aforementioned two units. The bridged output stage may be implemented by a full-bridge or a half-bridge configuration. The reference voltage generator is symmetric to the bridged output stage to generate a reference voltage, which is served as a reference voltage range for the voltage difference of the two terminals of the turned-on transistors in the bridged output stage during operation. When the detecting unit detects the voltages across the two terminals of the turned-on transistors in the bridged output stage exceed the reference voltage range, all the transistors are turned off and no power is outputted to the load. Therefore, the circuit is capable of preventing damages caused by a large current due to overload or short circuit.

Abstract: This invention relates to an ESD protection configuration and method for light emitting diodes (LED), including an LED an LED, having a p-n junction and connected to a circuit substrate, the circuit substrate having two p-type substrates and one n-type substrate therein; a first ESD protection configuration, built-in the circuit substrate and including a first resistor, a first capacitor and a first diode that are connected in series and then engage a parallel connection with the LED, wherein the first diode has a p-node connected to an n-node of the LED; and a second ESD protection configuration, built-in the circuit substrate and including a second resistor, a second capacitor and a second diode that are connected in series and then engage a parallel connection with the LED and the first ESD protection configuration, wherein the second diode has a p-node connected to the p-node of the LED, whereby such a configuration absorbs and removes ESD induced upon human contact and prevents the LED from burning to ef

Abstract: An anti-pop device for audio amplifier is suitable for outputting signals to a speaker to produce sound waves. The audio amplifier comprises a pre-processing unit, a filter and a voltage level detection unit electrically connected to the pre-processing unit. The voltage level detection unit detects the supply voltage. As the supply voltage is lower than a predetermined value, the voltage level detection unit outputs a signal to the pre-processing unit for lowering the audio volume so that a pop noise caused by circuit malfunction resulted from excessively-low supply voltage can be prevented.

Abstract: The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer.

Abstract: A gymnastic toy car comprising a car body with a housing and a chassis, two front wheels on the front two sides of the chassis, two rear wheels on the rear two sides thereof through a rear axle, two rockers on two fixing frames on the front two sides of chassis, the upper ends of two rockers extending to the upper side of housing, a four-bar linkage between the two front wheels, two drive mechanisms on the rear axle, and a brake device on the chassis nearby one rear wheel on one side. Shaking the two rockers forward and rearward continuously and simultaneously or alternately actuates the two drive mechanisms to drive the two rear wheels moving forward. Shaking and tilting the two rockers left or right actuates both the two rear wheels moving ahead and the four-bar linkage turning the two front wheels left or right, and stopping the shaking of two rockers and stamping the pedal of brake device slows down or stops moving the two rear wheels.