Patents by Inventor Cheng-Da Tsai

Cheng-Da Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250072164
    Abstract: A method for forming an indium gallium nitride quantum well structure is disclosed. The method includes forming a gallium nitride microdisk on a substrate, with the gallium nitride microdisk having an inverted pyramid form and an end face; and forming multiple quantum well layers on the end face, with each quantum well layer including an indium gallium nitride quantum well and a barrier layer. The indium gallium nitride quantum well is grown at a growth temperature adjusted using a trend equation within a temperature range of 480° C. to 810° C.
    Type: Application
    Filed: September 26, 2023
    Publication date: February 27, 2025
    Inventors: I-KAI LO, CHENG-DA TSAI, YU-CHUNG LIN, YING-CHIEH WANG, MING-CHI CHOU, TING-CHANG CHANG
  • Patent number: 11370703
    Abstract: Described is a method of processing an antimicrobial glass substrate. More particularly, described is a method of removing one or more of silver nitrate or silver oxide on the surface of an antimicrobial glass substrate. Also described is a method of manufacturing a glass substrate that is substantially free of yellow discoloration.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: June 28, 2022
    Assignee: CORNING INCORPORATED
    Inventors: Tien San Chi, Chih Yuan Lu, Cheng-Da Tsai, Yu Ying Tsai, Shan Zhu
  • Patent number: 10811559
    Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: October 20, 2020
    Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: I-Kai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Ming-Chi Chou
  • Publication number: 20200203555
    Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.
    Type: Application
    Filed: December 26, 2018
    Publication date: June 25, 2020
    Inventors: I-Kai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Ming-Chi Chou
  • Publication number: 20190382307
    Abstract: Described is a method of processing an antimicrobial glass substrate. More particularly, described is a method of removing one or more of silver nitrate or silver oxide on the surface of an antimicrobial glass substrate. Also described is a method of manufacturing a glass substrate that is substantially free of yellow discoloration.
    Type: Application
    Filed: June 12, 2019
    Publication date: December 19, 2019
    Inventors: Tien San Chi, Chih Yuan Lu, Cheng-Da Tsai, Yu Ying Tsai, Shan Zhu