Abstract: A water quality detection device including a detection tank, a sensor, the cleaner and a processor is provided. The sensor is disposed on the detection tank and is configured to sense a to-be-detected liquid within the detection tank. The cleaner is configured to clean the sensor. The processor is electrically connected to the sensor and the cleaner and is configured to: execute an initialization procedure, which includes driving the sensor to sense the to-be-detected liquid to obtain a number of initial sensing values and calculating a threshold value according to the initial sensing values; drive the sensor to sense the to-be-detected liquid to obtain a sensing value of the to-be-detected liquid, and determine whether the sensing value of the to-be-detected liquid reaches the threshold value; drive the cleaner to operate when the sensing value of the to-be-detected liquid reaches the threshold value.

Abstract: Described is a method of processing an antimicrobial glass substrate. More particularly, described is a method of removing one or more of silver nitrate or silver oxide on the surface of an antimicrobial glass substrate. Also described is a method of manufacturing a glass substrate that is substantially free of yellow discoloration.

Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.

Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.

Abstract: Described is a method of processing an antimicrobial glass substrate. More particularly, described is a method of removing one or more of silver nitrate or silver oxide on the surface of an antimicrobial glass substrate. Also described is a method of manufacturing a glass substrate that is substantially free of yellow discoloration.