Patents by Inventor CHENG DA WU

CHENG DA WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100050939
    Abstract: A method for determining the performance of an implanting apparatus comprises the steps of forming a dopant barrier layer on a substrate, forming a target layer on the dopant barrier layer, performing an implanting process by using the implanting apparatus to implant dopants into the target layer such that the target layer becomes conductive, measuring at least one electrical property of the target layer, and determining the performance of the implanting apparatus by taking the electrical property into consideration. In one embodiment of the present invention, the dopant barrier layer is silicon nitride layer, the target layer is a polysilicon layer, and the electrical property is the sheet resistance of the conductive polysilicon layer.
    Type: Application
    Filed: August 26, 2008
    Publication date: March 4, 2010
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: YU PIN HSU, YUAN MING CHANG, WEI HENG LEE, CHENG DA WU
  • Publication number: 20090298284
    Abstract: A method for preparing an integrated circuit structure performs a deposition process to form a precursor layer on a substrate, and the precursor layer has a phase transition property in a transition temperature region. Subsequently, a first thermal treating process is performed at a first temperature to transform the precursor layer into a polymorphous layer possessing a predetermined crystalline phase, and the first temperature is higher than an upper limit of the temperature of the transition temperature region.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 3, 2009
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: TZU LUN CHENG, CHENG DA WU, DA YU CHUANG, WEI HENG LEE
  • Publication number: 20090291548
    Abstract: A method for preparing a P-type polysilicon gate structure comprises the steps of forming a gate oxide layer on a substrate, forming an N-type polysilicon layer on the gate oxide layer, performing a first implanting process to convert the N-type polysilicon layer into a P-type polysilicon layer, performing a second implanting process to implant P-type dopants into a portion of the P-type polysilicon layer near the interface between the gate oxide layer and the P-type polysilicon layer, and performing a thermal treating process at a predetermined temperature for a predetermined period to complete the P-type polysilicon gate structure.
    Type: Application
    Filed: May 20, 2008
    Publication date: November 26, 2009
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: YUAN MING CHANG, CHENG DA WU, DA YU CHUANG, YEN TA CHEN
  • Publication number: 20090039295
    Abstract: A detachable inner shield suitable for an isolation bushing of an ion implanter is provided. The inner shield is mounted on an inside of the isolation bushing and completely fitting the inside of the isolation bushing.
    Type: Application
    Filed: February 20, 2008
    Publication date: February 12, 2009
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: Hung-Pin Yu, Hsueh-Li Chiang, Cheng-Da Wu, Shiu-Shien Hsheng