Abstract: A sweep voltage generator and a display panel are provided. The sweep voltage generator includes an output node, a current generating block and a voltage regulating block. The output node is used to provide a sweep signal. The current generating block is coupled to the output node, includes a detection path for detecting an output load variation on the output node, and adjusts the sweep signal provided by the output node based on the output load variation. The voltage regulating block is coupled to the output node for regulating a voltage of the output node.

Abstract: An optoelectronic computing system includes a first semiconductor die having a photonic integrated circuit (PIC) and a second semiconductor die having an electronic integrated circuit (EIC). The PIC includes optical waveguides, in which input values are encoded on respective optical signals carried by the optical waveguides. The PIC includes an optical copying distribution network having optical splitters. The PIC includes an array of optoelectronic circuitry sections, each receiving an optical wave from one of the output ports of the optical copying distribution network, and each optoelectronic circuitry section includes: at least one photodetector detecting at least one optical wave from the optoelectronic operation. The EIC includes electrical input ports receiving respective electrical values.

Abstract: An integrated circuit interposer includes a semiconductor substrate layer; a first metal contact layer including a first metal contact section that includes metal contacts arranged for electrically coupling to a first semiconductor die in a controlled collapsed chip connection, and a second metal contact section that includes metal contacts arranged for electrically coupling to a second semiconductor die in a controlled collapsed chip connection. A first patterned layer includes individually photomask patterned metal path sections. A second patterned layer includes individually photomask patterned waveguide sections, including a first waveguide that crosses at least one boundary between individually photomask patterned waveguide sections.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: Described herein is a technique for establishing an overall company-level confidence score based on analyzing data from various data sources. The overall score is derived using a machine learned model that takes as input a set of sub-scores, with each sub-score representing a measure of how frequently a domain name occurs within the same data record as a company name. The model used to combine the several sub-scores is trained using training data that includes a variety of sub-scores for company and domain names that have already been verified to be associated with one another.

Abstract: An error handling method performed by a computing device, the computing device comprises at least one computing device component and a board management controller (BMC) coupled to the at least one computing device component, the method comprises the steps of a BMC detecting an error relating to at least one computing device component, the BMC determining from a database a technical specification to fix the error and generating information for accessing the technical specification. An error handling apparatus comprises a BMC and at least one computing device component coupled to the BMC. The BMC is configured to detect an error relating to the at least one computing device component, determine from in a database a technical specification to fix the error, and generate information for accessing the technical specification.

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

Abstract: Disclosed are a self-adaptive assistance control device, a computer device and a storage medium for vehicle passing curve. The method comprises: step S10, according to signals from vehicle's sensors, identifying current bend types, and obtaining, corresponding to bend types, a lateral impact degree of the current vehicle according to a lateral acceleration; step S11, obtain an expected longitudinal acceleration based on the lateral impact degree; step S12, according to the expected longitudinal acceleration and a current actual longitudinal acceleration, determining an activation type for current bend assist control; and step S13, according to the activation type, cooperatively controlling an engine torque or/and an ESC braking intensity, so as to realize expected longitudinal control over the vehicle in the road curve.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. A surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.

Abstract: A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.

Abstract: Methods and devices use in two-color measurement systems. The methods and devices include methods of making corrections, methods of calculating correction factors, fluorescence scanners, and microarray chips. The said methods and devices enable a user to correct fluorescence intensities for errors caused by the occurrence of FRET and/or cross-talk when two fluorophores are used in two-color fluorescence arrays.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.

Abstract: A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.