Patents by Inventor Cheng-Fa Lu

Cheng-Fa Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200118977
    Abstract: A structure includes first and second substrates, first and second stress buffer layers, and a post-passivation interconnect (PPI) structure. The first and second substrates include first and second semiconductor substrates and first and second interconnect structures on the first and second semiconductor substrates, respectively. The second interconnect structure is on a first side of the second semiconductor substrate. The first substrate is bonded to the second substrate at a bonding interface. A via extends at least through the second semiconductor substrate into the second interconnect structure. The first stress buffer layer is on a second side of the second semiconductor substrate opposite from the first side of the second semiconductor substrate. The PPI structure is on the first stress buffer layer and is electrically coupled to the via. The second stress buffer layer is on the PPI structure and the first stress buffer layer.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Inventors: Chen-Fa Lu, Cheng-Yuan Tsai, Yeur-Luen Tu, Chia-Shiung Tsai
  • Patent number: 10534353
    Abstract: A system for reducing processing defects during processing of a semiconductor wafer prior to back-grinding the wafer includes a table having one or more holes formed therein, wherein the table comprises at least one of a chuck table or a support table, wherein the holes are perpendicular to the surface upon which a pre-back-grinding (PBG) process occurs. The system further includes one or more sensors disposed in said holes for monitoring a parameter during the PBG process. The system further includes a computer-implemented process control tool coupled with the one or more sensors and configured to determine whether the PBG process will continue.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Fa Lu, Cheng-Ting Chen, James Hu, Chung-Shi Liu
  • Patent number: 10510723
    Abstract: A structure includes first and second substrates, first and second stress buffer layers, and a post-passivation interconnect (PPI) structure. The first and second substrates include first and second semiconductor substrates and first and second interconnect structures on the first and second semiconductor substrates, respectively. The second interconnect structure is on a first side of the second semiconductor substrate. The first substrate is bonded to the second substrate at a bonding interface. A via extends at least through the second semiconductor substrate into the second interconnect structure. The first stress buffer layer is on a second side of the second semiconductor substrate opposite from the first side of the second semiconductor substrate. The PPI structure is on the first stress buffer layer and is electrically coupled to the via. The second stress buffer layer is on the PPI structure and the first stress buffer layer.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Fa Lu, Cheng-Yuan Tsai, Yeur-Luen Tu, Chia-Shiung Tsai
  • Publication number: 20190252317
    Abstract: The present disclosure provides a semiconductor structure having an ultra thick metal (UTM). The semiconductor structure includes a substrate, a metal layer over the substrate, and an UTM over the metal layer. An area density of the UTM is greater than 40% and a thickness of the UTM is equal to or greater than 6 micrometer. The present disclosure provides a method for manufacturing a semiconductor structure having a UTM. The method includes patterning a dielectric layer with a plurality of trenches by a first mask, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, and selectively plating conductive materials in the plurality of trenches.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 15, 2019
    Inventors: CHEN-FA LU, CHENG-YUAN TSAI, CHING-CHUNG HSU, CHUNG-LONG CHANG
  • Patent number: 5566426
    Abstract: A cuff link including a base, which has two parallel blocks at the top and a longitudinal top open chamber defined between the blocks, which blocks each having a pivot hole and a side opening communicated between the respective pivot hole and the top open chamber, a button, which has a shank, which has two pivot pins respectively inserted through the side openings on the blocks into the pivot holes thereof for permitting the button to be turned relative to the base between the fastening position and the unfastening position, and a spring plate inserted into the top open chamber to support the shank and to prevent the pivot pins from moving out of the pivot holes.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: October 22, 1996
    Inventor: Cheng-Fa Lu
  • Patent number: 4801403
    Abstract: A process for the production of an aqueous dispersion of vermiculite ore particles comprising delaminating vermiculite ore by subjecting an aqueous slurry of the ore to a shearing action until a dispersion containing vermiculite lamellae having dimensions less than 200 microns is produced.
    Type: Grant
    Filed: July 17, 1987
    Date of Patent: January 31, 1989
    Assignee: Hercules Incorporated
    Inventors: Cheng-Fa Lu, Lawrence L. Nelson
  • Patent number: 4743384
    Abstract: Disclosed are (1) drilling fluid compositions consisting essentially of an aqueous medium selected from the group consisting of fresh and tap water, natural and synthetic sea water, and natural and synthetic brine, and carboxymethyl guar having a degree of substitution (D.S.) of 0.1 to 0.4; (2) drilling fluid compositions consisting essentially of an aqueous medium selected from the group consisting of fresh and tap water, natural and synthetic sea water, and natural and synthetic brine, a carboxymethyl guar having a D.S. of from 0.1 to 0.4, and a metal salt selected from the group consisting of water-soluble metal carbonates and bicarbonates; and (3) drilling fluid compositions consisting essentially of an aqueous medium selected from the group consisting of fresh and tap water, a carboxymethyl guar having a D.S. of from 0.1 to 0.4, a metal salt selected from the group consisting of water-soluble metal carbonates and bicarbonates, and a noncarbonate polyvalent metal salt.
    Type: Grant
    Filed: May 13, 1986
    Date of Patent: May 10, 1988
    Assignee: Aqualon Company
    Inventors: Cheng-Fa Lu, Carl A. Lukach, Robert R. Pas