Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A concrete floor hardening agent includes an aluminate, a waterproofing agent, and water. The aluminate is selected from the group consisting of potassium aluminate and sodium aluminate, and is present in an amount ranging from 15 wt % to 65 wt % based on 100 wt % of the concrete floor hardening agent. The waterproofing agent is selected from the group consisting of potassium methyl silicate, sodium methyl silicate, silicone oil, and siloxane, and is present in an amount ranging from 5 wt % to 20 wt % based on 100 wt % of the concrete floor hardening agent.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A method for recycling concrete waste includes the steps of: a) heating the concrete waste to provide a measure of fragility to the concrete waste; b) milling and sieving the heated concrete waste to separate coarse aggregate from the concrete waste; and c) milling and sieving a remaining portion of the concrete waste remaining after separation of the coarse aggregate to separate the remaining portion of the concrete waste into a cement-containing fraction and fine aggregate.

Abstract: A method for making a regenerated soil material for the production of a structural unit includes the steps of: a) obtaining a raw soil material containing aluminum and silicon from a natural source; b) adding an active mineral containing aluminum and silicon to the raw soil material; c) cleaving the raw soil material and the active mineral in a base so as to dissociate aluminum monomer and silicon monomer out of the mixture of the raw soil material and the active mineral; and d) polymerizing the aluminum monomer and the silicon monomer so as to form silicon-oxy tetrahedron and aluminum-oxy tetrahedron in the mixture.

Abstract: A method for recycling concrete waste includes the steps of: a) heating the concrete waste to provide a measure of fragility to the concrete waste; b) milling and sieving the heated concrete waste to separate coarse aggregate from the concrete waste; and c) milling and sieving a remaining portion of the concrete waste remaining after separation of the coarse aggregate to separate the remaining portion of the concrete waste into a cement-containing fraction and fine aggregate.

Abstract: A method for making a regenerated soil material for the production of a structural unit includes the steps of: a) obtaining a raw soil material containing aluminum and silicon from a natural source; b) adding an active mineral containing aluminum and silicon to the raw soil material; c) cleaving the raw soil material and the active mineral in a base so as to dissociate aluminum monomer and silicon monomer out of the mixture of the raw soil material and the active mineral; and d) polymerizing the aluminum monomer and the silicon monomer so as to form silicon-oxy tetrahedron and aluminum-oxy tetrahedron in the mixture.

Abstract: A method for producing a ready-mix soil material includes the steps of: (a) crushing earth material excavated from a work site; (b) sieving the earth material after crushing so as to obtain raw soil material; and (c) mixing metered amounts of the raw soil material and at least one strength-enhancing additive in an automated manner so as to obtain the ready-mix soil material.

Abstract: A method for producing a ready-mix soil material includes the steps of: (a) crushing earth material excavated from a work site; (b) sieving the earth material after crushing so as to obtain raw soil material; and (c) mixing metered amounts of the raw soil material and at least one strength-enhancing additive in an automated manner so as to obtain the ready-mix soil material.

Abstract: The present invention provides an improved cache memory architecture with way prediction. The improved architecture entails placing the address tag array of a cache memory on the central processing unit core (i.e. the microprocessor chip), while the cache data array remains off the microprocessor chip. In addition, a way predictor is provided in conjunction with the improved memory cache architecture to increase the overall performance of the cache memory system.

Abstract: The present invention provides a method and a data processing system for accessing a memory of a data processing system, the data processing system including a first and at least a second level memory for storing information. The method includes issuing a memory request to the first level memory, and issuing the memory request to the second level memory at substantially the same time the memory request is issued to the first level memory.