Patents by Inventor Cheng H. Hsieh

Cheng H. Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7872495
    Abstract: A unit cell for a programmable termination circuit in an integrated circuit and a method for programming such termination circuit are described. In an embodiment, such unit cells may have three n-type and three p-type transistors. A first transistor is coupled to receive a first float control signal. A second transistor is coupled to receive a second float control signal. The third and fourth transistors are coupled to receive a first termination voltage control signal. The fifth and sixth transistors are coupled to receive a second termination voltage control signal. The first float control signal and the second float control signal are a pair of complementary signals.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: January 18, 2011
    Assignee: Xilinx, Inc.
    Inventors: Toan D. Tran, Cheng H. Hsieh, Mark J. Marlett
  • Patent number: 5476633
    Abstract: An INVAR 36 material having long-term dimensional stability is produced by sintering a blend of powders of nickel and iron under pressure in an inert atmosphere to form an alloy containing less than 0.01 parts of carbon and less than 0.1 part aggregate and preferably 0.01 part individually of Mn, Si, P, S, and Al impurities. The sintered alloy is heat treated and slowly and uniformly cooled to form a material having a coefficient of thermal expansion of less than 1 ppm/.degree.C. and a temporal stability of less than 1 ppm/year.
    Type: Grant
    Filed: July 6, 1994
    Date of Patent: December 19, 1995
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Witold M. Sokolowski, Marc S. Lane, Cheng H. Hsieh, Timothy P. O'Donnell