Abstract: A method of controlling a feedback control system of a semiconductor process chemical fluid in a storage tank includes performing a fluid quality measurement of fluid by a spectrum analyzer positioned adjacent to a dispensing port of the storage tank, and determining whether a variation in fluid quality measurement of the fluid is within an acceptable range. The method further includes in response to a variation in fluid quality measurement that is not within the acceptable range of variation in fluid quality measurement, automatically adjusting a configurable parameter of the semiconductor process chemical fluid in the storage tank to set the variation in fluid quality measurement of the fluid within the acceptable range.

Abstract: Ruthenium of a metal gate (MG) and/or a middle end of line (MEOL) structure is annealed to reduce, or even eliminate, seams after the ruthenium is deposited. Because the annealing reduces (or removes) seams in deposited ruthenium, electrical performance is increased because resistivity of the MG and/or the MEOL structure is decreased. Additionally, for MGs, the annealing generates a more even deposition profile, which results in a timed etching process producing a uniform gate height. As a result, more of the MGs will be functional after etching, which increases yield during production of the electronic device.

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

Abstract: A method of forming a solid-state electrolyte powder includes the following steps. A zirconium compound layer is formed on an inner surface of a container. A precursor mixture is placed on the zirconium compound layer. The precursor mixture includes a first salt group and a second salt group. The first salt group includes zirconium source compound, lanthanum source compound, aluminum source compound, titanium source compound, tantalum source compound, or combinations thereof. The second salt group includes lithium source compound. An aerobic sintering process is performed to form the solid-state electrolyte powder.

Abstract: A semiconductor device package includes a substrate, a connection structure, a first package body and a first electronic component. The substrate has a first surface and a second surface opposite to the first surface. The connection structure is disposed on the firs surface of the substrate. The first package body is disposed on the first surface of the substrate. The first package body covers the connection structure and exposes a portion of the connection structure. The first electronic component is disposed on the first package body and in contact with the portion of the connection structure exposed by the first package body.

Abstract: A semiconductor device package includes a substrate, a connection structure, a first package body and a first electronic component. The substrate has a first surface and a second surface opposite to the first surface. The connection structure is disposed on the firs surface of the substrate. The first package body is disposed on the first surface of the substrate. The first package body covers the connection structure and exposes a portion of the connection structure. The first electronic component is disposed on the first package body and in contact with the portion of the connection structure exposed by the first package body.

Abstract: A motion vector refinement apparatus includes a first storage device, a motion vector predictor (MVP) derivation circuit, and a decoder side motion vector refinement (DMVR) circuit. The MVP derivation circuit derives a first MVP for a current block, stores the first MVP into the first storage device, and performs a new task. The DMVR circuit performs a DMVR operation to derive a first motion vector difference (MVD) for the first MVP. The MVP derivation circuit starts performing the new task before the DMVR circuit finishes deriving the first MVD for the first MVP.

Abstract: A semiconductor device package includes a substrate, a connection structure, a first package body and a first electronic component. The substrate has a first surface and a second surface opposite to the first surface. The connection structure is disposed on the first surface of the substrate. The first package body is disposed on the first surface of the substrate. The first package body covers the connection structure and exposes a portion of the connection structure. The first electronic component is disposed on the first package body and in contact with the portion of the connection structure exposed from the first package body.

Abstract: A semiconductor device package includes a substrate, a connection structure, a first package body and a first electronic component. The substrate has a first surface and a second surface opposite to the first surface. The connection structure is disposed on the first surface of the substrate. The first package body is disposed on the first surface of the substrate. The first package body covers the connection structure and exposes a portion of the connection structure. The first electronic component is disposed on the first package body and in contact with the portion of the connection structure exposed from the first package body.

Abstract: A motion vector (MV) projection method includes generating motion field motion vectors (MFMVs) for a first portion of a current frame by applying MV projection to MVs of a portion of each of reference frames and storing the MFMVs of the first portion of the current frame into an MFMV buffer, and generating MFMVs for a second portion of the current frame by applying MV projection to MVs of a portion of each of the reference frames and storing the MFMVs of the second portion of the current frame into the MFMV buffer. The second portion does not overlap the first portion. Before generating the MFMVs for the second portion of the current frame is done, at least one of the MFMVs of the first portion is read from the MFMV buffer and involved in motion vector determination of at least one coding block included in the first portion.

Abstract: A semiconductor device package includes a substrate, a connection structure, a first package body and a first electronic component. The substrate has a first surface and a second surface opposite to the first surface. The connection structure is disposed on the firs surface of the substrate. The first package body is disposed on the first surface of the substrate. The first package body covers the connection structure and exposes a portion of the connection structure. The first electronic component is disposed on the first package body and in contact with the portion of the connection structure exposed from the first package body.

Abstract: A motion vector (MV) projection method includes generating motion field motion vectors (MFMVs) for a first portion of a current frame by applying MV projection to MVs of a portion of each of reference frames and storing the MFMVs of the first portion of the current frame into an MFMV buffer, and generating MFMVs for a second portion of the current frame by applying MV projection to MVs of a portion of each of the reference frames and storing the MFMVs of the second portion of the current frame into the MFMV buffer. The second portion does not overlap the first portion. Before generating the MFMVs for the second portion of the current frame is done, at least one of the MFMVs of the first portion is read from the MFMV buffer and involved in motion vector determination of at least one coding block included in the first portion.

Abstract: A video decoding method is used for decoding a multi-plane video bitstream. The multi-plane video bitstream includes a first video subset bitstream corresponding to a fundamental plane (FP) and at least one second video subset bitstream corresponding to at least one augmented plane (AP). The video decoding method includes decoding the first video subset bitstream, decoding the at least one second video subset bitstream, and performing resampling of one decoded FP frame to generate one resampled frame. Decoding the first video subset bitstream includes performing decoding of a first FP frame to generate a first decoded FP frame. Decoding the at least one second video subset bitstream includes performing decoding of a first AP frame to generate a first decoded AP frame. A processing time of performing decoding of the first FP frame overlaps a processing time of performing resampling of said one decoded FP frame.

Abstract: A method and apparatus of scalable video coding using Inter prediction mode for a video coding system are disclosed, where video data being coded comprise BP (Basic Resolution Pass) pictures and UP (Upgrade Resolution Pass) pictures. In one embodiment according to the present invention, the method comprises receiving information associated with input data corresponding to a target block in a target UP picture. When the target block is Inter coded according to a current MV (motion vector) and uses a collocated BP picture as one reference picture, one or more BP MVs (motion vectors) of the collocated BP picture are scaled to generate one or more RCP (resolution change processing) MVs. The current MV of the target block is encoded or decoded using an UP MV predictor derived based on one or more temporal MVPs including said one or more RCP MVs.

Abstract: This invention provides an image processing apparatus and an image processing method. By calculation of the pixel difference that is the difference of each corresponding pixels between the current image and the previous image with its neighbor pixel difference, this invention can determine the blending value.

Abstract: This invention provides an image processing apparatus and an image processing method. By calculation of the pixel difference that is the difference of each corresponding pixels between the current image and the previous image with its neighbor pixel difference, this invention can determine the blending value.

Abstract: A gas sensor comprises a first surface-acoustic-wave device, at least one further surface-acoustic-wave device, and a control device. The first surface-acoustic-wave device includes a piezoelectric substrate, a pair of transducers and an external circuit. The pair of transducers consists of a first transducer and a second transducer, and they are formed on two sides of the piezoelectric substrate. The first transducer is utilized to generate a surface acoustic wave on the piezoelectric substrate. The external circuit electrically connects to the pair of transducers. At least one further surface-acoustic-wave device includes at least one first surface-acoustic-device and a sensing porous thin film of which two sides are formed on the pair of the transducers. The control device is utilized to control only one external circuit to become activated at one time.