Abstract: A semiconductor device includes a fin-like structure. The fin-like structure includes a bottom layer formed of silicon and at least a top layer formed of germanium. The semiconductor device further includes a gate stack feature overlaying a central upper portion of the fin-like structure, wherein the gate stack is in contact with a top surface and sidewalls of the top layer, and at least part of sidewalls of the bottom layer.

Abstract: A portable electronic device includes a casing unit, a first support unit, a second support unit, a first antenna unit, a second antenna unit, a first conducting unit and a second conducting unit. The casing unit includes a first outer casing and a second outer casing pivotally connected with the first outer casing. The first outer casing includes a hinge structure pivotally connected with the second outer casing. The first support unit includes a first support body disposed in the hinge structure, and the second support unit includes a second support body disposed in the hinge structure. The first antenna unit includes a first antenna structure disposed on the first support body and separated from the second outer casing. The second antenna unit includes a second antenna structure disposed on the second support body and separated from the second outer casing.

Abstract: A portable electronic device includes a casing unit, a first support unit, a second support unit, a first antenna unit, a second antenna unit, a first conducting unit and a second conducting unit. The casing unit includes a first outer casing and a second outer casing pivotally connected with the first outer casing. The first outer casing includes a hinge structure pivotally connected with the second outer casing. The first support unit includes a first support body disposed in the hinge structure, and the second support unit includes a second support body disposed in the hinge structure. The first antenna unit includes a first antenna structure disposed on the first support body and separated from the second outer casing. The second antenna unit includes a second antenna structure disposed on the second support body and separated from the second outer casing.

Abstract: A digital signal processor structure by performing length-scalable Fast Fourier Transformation (FFT) discloses a single processor element (single PE), and a simple and effective address generator are used to achieve length-scalable, high performance, and low power consumption in split-radix-2/4 FFT or IFFT module. In order to meet different communication standards, the digital signal processor structure has run-time configuration to perform for different length requirements. Moreover, its execution time can fit the standards of Fast Fourier Transformation (FFT) or Inverse Fast Fourier Transformation (IFFT).

Abstract: A digital signal processor structure by performing length-scalable Fast Fourier Transformation (FFT) discloses a single processor element (single PE), and a simple and effective address generator are used to achieve length-scalable, high performance, and low power consumption in split-radix-2/4 FFT or IFFT module. In order to meet different communication standards, the digital signal processor structure has run-time configuration to perform for different length requirements. Moreover, its execution time can fit the standards of Fast Fourier Transformation (FFT) or Inverse Fast Fourier Transformation (IFFT).