Patents by Inventor Cheng-Han Tsou

Cheng-Han Tsou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same
    Patent number: 10868128
    Abstract: Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: December 15, 2020
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Jen-Inn Chyi, Cheng-Han Tsou, Szu-Hung Chen
  • Semiconductor Contact Structure, Semiconductor Device, and Method for Forming the Same
    Publication number: 20200006511
    Abstract: Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).
    Type: Application
    Filed: February 1, 2019
    Publication date: January 2, 2020
    Inventors: Jen-Inn Chyi, Cheng-Han Tsou, Szu-Hung Chen