Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

Abstract: A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.

Abstract: Topographic planarization methods for a lithography process are provided. The method includes providing a substrate having a topography surface. A planarization stack is formed over the topography surface of the substrate. The optical material stack includes a first optical material layer and an overlying second optical material layer, and the first optical material layer has a higher etching rate than the second optical material layer with respect to an etchant. The planarization stack is etched using the etchant to entirely remove the second optical material layer and partially remove the first optical material layer, such that the remaining first optical material layer has a substantially planar surface over the topography surface of the substrate.

Abstract: A photolithography system includes a variable-volume buffer tank, a dispensing system connected to the buffer tank, and a valve configured to release gas from a head space of the buffer tank while blocking the release of liquid from the head space. A storage container has an opening at the bottom and drains to the buffer tank through that opening. The buffer tank has a storage capacity sufficient to receive the full contents of the storage container. The system supplies chemical solutions to the dispensing system while keeping the chemical solutions from contact with air and other gases.

Abstract: A method for treating and/or delaying the degeneration of Purkinje cells in a subject is provided. The method comprises administering to a subject in need thereof a therapeutically effective amount of a medicament, wherein the medicament comprises a phthalide selected from the group consisting of n-butylidenephthalide (BP), a metabolic precursor of BP, a pharmaceutically acceptable salt of a metabolic precursor of BP, a pharmaceutically acceptable ester of a metabolic precursor of BP, and combinations thereof.

Abstract: An electronic device includes a display and a processor. The display displays a present application program in a first brightness. When the electronic device in normal-use status receives no user input for a predetermined idle time period, the processor determines whether the present application program is in a half-suspend list. If yes, the processor controls the electronic device to enter a half-suspend status and keep the present application program running, but controls the display to display the present application program in a second brightness, which is less bright than the first brightness. A half-suspend controlling method of the electronic device is also provided.

Abstract: A photolithography system includes a variable-volume buffer tank, a dispensing system connected to the buffer tank, and a valve configured to release gas from a head space of the buffer tank while blocking the release of liquid from the head space. A storage container has an opening at the bottom and drains to the buffer tank through that opening. The buffer tank has a storage capacity sufficient to receive the full contents of the storage container. The system supplies chemical solutions to the dispensing system while keeping the chemical solutions from contact with air and other gases.

Abstract: A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).

Abstract: Forged emails are detected by extracting email address parts of a sender email address. The email address parts include an account name, a subdomain, and a base domain of the sender email address. The mutation ratio of the email address parts relative to reference strings are calculated to determine similarity of the email address parts to the reference strings. The mutation ratios are compared to ratio thresholds to identify suspicious email addresses, and the results of identifying suspicious email addresses are correlated with other computer security information to identify forged emails.

Abstract: A method for a communication device to automatically respond to an incoming call is provided. The method includes defining a destination, calculating an average speed of the communication device based on a GPS unit of the communication device, determining whether the average speed is equal to or exceeds a predefined value, disconnecting the incoming call if the average speed is equal to or exceeds the predefined value, forming a predefined message based on the average speed, and transmitting the predefined message to a caller of the incoming call.

Abstract: A communication device includes: a detecting unit, performing a mobility detection in a time interval to generate a detection result; a selecting unit, selecting a channel estimation method from a plurality of channel estimation methods according to the detection result; and a channel estimating unit, coupled to the selecting unit, performing a channel estimation on a channel for receiving a signal according to the selected channel estimation method.

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: In an embodiment a radical inhibitor is included within a photoresist in order to reduce the amount of cross-linking that occurs during subsequent processing, such as an ion implantation process, that would otherwise form a crust within the photoresist. The crust can be removed in a separate process, such as a dry etch with an oxidative or reductive etchant. Alternatively, the crust may be treated to make it more hydrophyilic such that it can be removed simultaneously with the photoresist.

Abstract: A method for a communication device to automatically respond to an incoming call is provided. The method includes defining a destination, calculating an average speed of the communication device based on a GPS unit of the communication device, determining whether the average speed is equal to or exceeds a predefined value, disconnecting the incoming call if the average speed is equal to or exceeds the predefined value, forming a predefined message based on the average speed, and transmitting the predefined message to a caller of the incoming call.

Abstract: A method for a communication device to automatic respond to an incoming call is provided. The method includes: configuring a destination and a message template; detecting whether there is an obstruction in front of the communication device and a picture taken by a rear camera is in an even color when an incoming call is received; turning off a ringtone of the incoming call if there is an obstruction and the picture is in an even color; detecting a current position and position variation by a GPS unit; calculating an average speed based on the position variation; and hanging up the incoming call, calculating a time required to reach the destination, filling out the message template with the time required to form a predefined message, and then transmitting the predefined message to the caller of the incoming call if the average speed equals to or exceed a predefined value.

Abstract: A time-varying channel discriminating device capable of determining whether a wireless communication channel is time-varying is provided. The time-varying channel discriminating device includes: a channel response estimating circuit, estimating a channel response of a baseband signal at a plurality of time points to generate a plurality of estimated channel responses; a transforming unit, transforming the estimated channel responses to generate a plurality of estimated channel frequency responses; a calculating unit, calculating a plurality of calculated values according to the estimated channel frequency responses; and a determining module, determining a channel state corresponding to the baseband signal according to the calculated values.

Abstract: A material layer is formed over a substrate. A negative tone photoresist layer is formed over the material layer. An exposure process is performed to the negative tone photoresist layer. A post-exposure bake (PEB) process is performed to the negative tone photoresist layer. After the exposure process and the PEB process, the negative tone photoresist layer is treated with a solvent. The solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).

Abstract: An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first width in the first fin, the first trench dividing the first fin into at least two fin portions, forming a first gate structure and first source/drain regions over one of the at least two fin portions of the first fin, and forming a second gate structure and second source/drain regions over another of the at least two fin portions of the first fin.

Abstract: A system for forming a coating comprises applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the first coating after planarizing the top surface. The first coating may be applied over the plurality of topographical features, and may be substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating. A solvent may be applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The first coating may have a planar surface prior to drying the first coating, and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating.