Abstract: The present invention provides a wireless communication method, wherein the wireless communication method includes the steps of: controlling the electronic device to operate in an active mode and communicating with an access point; after a traffic between the electronic device and the access point ends, controlling the electronic device to operate in a first mode, and transmitting a null frame to notify the access point that the electronic device enters a power saving mode; and during the first mode, controlling the electronic device to leave the power saving mode and transmitting at least one query signal to the access point to ask data.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: Provided is an anti-fuse memory including a anti-fuse memory cell including an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second and third doped regions. The isolation structure is disposed in a substrate. The select gate is disposed on the substrate. The first gate insulating layer is disposed between the select gate and the substrate. The anti-fuse gate is disposed on the substrate and partially overlapped with the isolation structure. The second gate insulating layer is disposed between the anti-fuse gate and the substrate. The first doped region and the second doped region are disposed in the substrate at opposite sides of the select gate, respectively, wherein the first doped region is located between the select gate and the anti-fuse gate. The third doped region is disposed in the substrate and located between the first doped region and the isolation structure.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: In order to prevent long down-time that occurs with unexpected material depletion, an Inline Tin Stream Monitor (ITSM) system precisely measures the tin amount introduced by an in-line refill system and precisely estimates remaining runtime by measuring pressure level changes before and after in-line refill.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.

Abstract: Some implementations described herein provide techniques and apparatuses for inspecting interior surfaces of a vessel of a radiation source for an accumulation of a target material. An inspection tool, including a laser-scanning system and a motor system supported by an elongated supported member, may be inserted into the vessel to generate an accurate three-dimensional profile of the interior surfaces. Use of the inspection tool is efficient, with short setup and scan times that substantially reduce a duration associated with evaluating the interior surfaces of the vessel for the accumulation.

Abstract: A wafer table inspection tool described herein is capable of being positioned over a wafer table while the wafer table is positioned in a bottom module of an exposure tool of a lithography system. The wafer table inspection tool is capable of quickly evaluating the condition of surface burls on the wafer table and evaluating cleaning performance of a cleaning operation in which the surface burls are cleaned.

Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.