Patents by Inventor Cheng-Hao Lai

Cheng-Hao Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240203936
    Abstract: A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.
    Type: Application
    Filed: March 1, 2024
    Publication date: June 20, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Yen Chang, Yu-Chia Lai, Cheng-Shiuan Wong, Ting Hao Kuo, Ching-Hua Hsieh, Hao-Yi Tsai, Kuo-Lung Pan, Hsiu-Jen Lin
  • Patent number: 12015066
    Abstract: A method includes providing first and second channel layers in NMOS and PMOS regions respectively of a substrate; depositing a first layer comprising hafnium oxide over the first and second channel layers; forming a first dipole pattern over the second channel layer and not over the first channel layer; driving a first metal from the first dipole pattern into the first layer by annealing; removing the first dipole pattern; depositing a second layer comprising hafnium oxide over the first layer and over the first and second channel layers; forming a second dipole pattern over the second layer and the first channel layer and not over the second channel layer; driving a second metal from the second dipole pattern into the second layer by annealing; removing the second dipole pattern; and depositing a third layer comprising hafnium oxide over the second layer and over the first and the second channel layers.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: June 18, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Yuan Chang, Te-Yang Lai, Kuei-Lun Lin, Xiong-Fei Yu, Chi On Chui, Tsung-Da Lin, Cheng-Hao Hou
  • Publication number: 20240159642
    Abstract: A smoke detector with an anti-insect function includes a substrate, an optical detection module, a top cover, a base and a perforated plate. The substrate has a ring shape region surrounding a central detection region, and a first block structure of the central detection region is protruded from the substrate and higher than an upper surface of the ring shape region. The optical detection module is disposed inside the central detection region. The top cover has a lateral wall. The base is disposed on the substrate and connected to the top cover to cover the optical detection module. The base has a second block structure partly overlapped with the lateral wall to form a guiding channel. The perforated plate is disposed between the lateral wall and the second block structure to prevent an insect from moving into the top cover through the guiding channel.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 16, 2024
    Applicant: PixArt Imaging Inc.
    Inventors: Yen-Chang Chu, Cheng-Nan Tsai, Chih-Ming Sun, Zhi-Hao Wu, Hung-Yu Lai
  • Publication number: 20240153823
    Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.
    Type: Application
    Filed: January 18, 2024
    Publication date: May 9, 2024
    Inventors: Pei Ying Lai, Chia-Wei Hsu, Cheng-Hao Hou, Xiong-Fei Yu, Chi On Chui
  • Publication number: 20240139301
    Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.
    Type: Application
    Filed: November 19, 2021
    Publication date: May 2, 2024
    Inventors: Ming-Tain LAI, Cheng-Der Tony YU, I-Ju CHEN, Wei-Han LEE, Chueh-Hao YANG, Chun-Yen TSAO, Chang-Lin HSIEH, Chien-Chih OU, Chen-En TSAI
  • Publication number: 20240114458
    Abstract: The present invention provides a wireless communication method, wherein the wireless communication method includes the steps of: controlling the electronic device to operate in an active mode and communicating with an access point; after a traffic between the electronic device and the access point ends, controlling the electronic device to operate in a first mode, and transmitting a null frame to notify the access point that the electronic device enters a power saving mode; and during the first mode, controlling the electronic device to leave the power saving mode and transmitting at least one query signal to the access point to ask data.
    Type: Application
    Filed: September 28, 2023
    Publication date: April 4, 2024
    Applicant: MEDIATEK INC.
    Inventors: Cheng-Kung Lai, Chia-Ning Chang, Po-Hao Hsiao
  • Patent number: 11942451
    Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Yen Chang, Yu-Chia Lai, Cheng-Shiuan Wong, Ting Hao Kuo, Ching-Hua Hsieh, Hao-Yi Tsai, Kuo-Lung Pan, Hsiu-Jen Lin
  • Publication number: 20240071535
    Abstract: Provided is an anti-fuse memory including a anti-fuse memory cell including an isolation structure, a select gate, first and second gate insulating layers, an anti-fuse gate, and first, second and third doped regions. The isolation structure is disposed in a substrate. The select gate is disposed on the substrate. The first gate insulating layer is disposed between the select gate and the substrate. The anti-fuse gate is disposed on the substrate and partially overlapped with the isolation structure. The second gate insulating layer is disposed between the anti-fuse gate and the substrate. The first doped region and the second doped region are disposed in the substrate at opposite sides of the select gate, respectively, wherein the first doped region is located between the select gate and the anti-fuse gate. The third doped region is disposed in the substrate and located between the first doped region and the isolation structure.
    Type: Application
    Filed: October 16, 2022
    Publication date: February 29, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Chung-Hao Chen, Chi-Hsiu Hsu, Chi-Fa Lien, Ying-Ting Lin, Cheng-Hsiao Lai, Ya-Nan Mou
  • Patent number: 11915979
    Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei Ying Lai, Chia-Wei Hsu, Cheng-Hao Hou, Xiong-Fei Yu, Chi On Chui
  • Publication number: 20230375938
    Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 23, 2023
    Inventors: Cheng-Hao LAI, Ming-Hsun TSAI, Hsin-Feng CHEN, Wei-Shin CHENG, Yu-Kuang SUN, Cheng-Hsuan WU, Yu-Fa LO, Shih-Yu TU, Jou-Hsuan LU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11809083
    Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
    Type: Grant
    Filed: October 5, 2021
    Date of Patent: November 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Hao Lai, Ming-Hsun Tsai, Hsin-Feng Chen, Wei-Shin Cheng, Yu-Kuang Sun, Cheng-Hsuan Wu, Yu-Fa Lo, Shih-Yu Tu, Jou-Hsuan Lu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230345610
    Abstract: In order to prevent long down-time that occurs with unexpected material depletion, an Inline Tin Stream Monitor (ITSM) system precisely measures the tin amount introduced by an in-line refill system and precisely estimates remaining runtime by measuring pressure level changes before and after in-line refill.
    Type: Application
    Filed: April 22, 2022
    Publication date: October 26, 2023
    Inventors: Yu-Kuang SUN, Ming-Hsun TSAI, Wei-Shin CHENG, Cheng-Hao LAI, Hsin-Feng CHEN, Chiao-Hua CHENG, Cheng Hsuan WU, Yu-Fa LO, Jou-Hsuan LU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20230189422
    Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
    Type: Application
    Filed: December 12, 2022
    Publication date: June 15, 2023
    Inventors: Yu-Kuang SUN, Cheng-Hao LAI, Yu-Huan CHEN, Wei-Shin CHENG, Ming-Hsun TSAI, Hsin-Feng CHEN, Chiao-Hua CHENG, Cheng-Hsuan WU, Yu-Fa LO, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20230067967
    Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Inventors: Chiao-Hua CHENG, Sheng-Kang YU, Shang-Chieh CHIEN, Wei-Chun YEN, Heng-Hsin LIU, Ming-Hsun TSAI, Yu-Fa LO, Li-Jui CHEN, Wei-Shin CHENG, Cheng-Hsuan WU, Cheng-Hao LAI, Yu-Kuang SUN, Yu-Huan CHEN
  • Publication number: 20230058753
    Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 23, 2023
    Inventors: Cheng-Hao LAI, Ming-Hsun TSAI, Hsin-Feng CHEN, Wei-Shin CHENG, Yu-Kuang SUN, Cheng-Hsuan WU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11576250
    Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: February 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Hao Lai, Ming-Hsun Tsai, Hsin-Feng Chen, Wei-Shin Cheng, Yu-Kuang Sun, Cheng-Hsuan Wu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230010810
    Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.
    Type: Application
    Filed: July 9, 2021
    Publication date: January 12, 2023
    Inventors: HSIN-FENG CHEN, MING-HSUN TSAI, LI-JUI CHEN, SHANG-CHIEH CHIEN, HENG-HSIN LIU, CHENG-HAO LAI, YU-HUAN CHEN, WEI-SHIN CHENG, YU-KUANG SUN, CHENG-HSUAN WU, YU-FA LO, CHIAO-HUA CHENG
  • Patent number: 11553581
    Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiao-Hua Cheng, Hsin-Feng Chen, Yu-Fa Lo, Yu-Kuang Sun, Wei-Shin Cheng, Yu-Huan Chen, Ming-Hsun Tsai, Cheng-Hao Lai, Cheng-Hsuan Wu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen, Sheng-Kang Yu
  • Patent number: 11537053
    Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: December 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chiao-Hua Cheng, Yu-Kuang Sun, Wei-Shin Cheng, Yu-Huan Chen, Ming-Hsun Tsai, Cheng-Hao Lai, Cheng-Hsuan Wu, Yu-Fa Lo, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen, Sheng-Kang Yu
  • Publication number: 20220408538
    Abstract: Some implementations described herein provide techniques and apparatuses for inspecting interior surfaces of a vessel of a radiation source for an accumulation of a target material. An inspection tool, including a laser-scanning system and a motor system supported by an elongated supported member, may be inserted into the vessel to generate an accurate three-dimensional profile of the interior surfaces. Use of the inspection tool is efficient, with short setup and scan times that substantially reduce a duration associated with evaluating the interior surfaces of the vessel for the accumulation.
    Type: Application
    Filed: April 11, 2022
    Publication date: December 22, 2022
    Inventors: Jou-Hsuan LU, Chiao-Hua CHENG, Cheng-Hsuan WU, Ko-Ching HOU, Jyun-Yan CHUANG, Cheng-Hao LAI, Yu-Kuang SUN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU