Patents by Inventor Cheng-Hen Huang

Cheng-Hen Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stacked capacitor process using silicon nodules
    Patent number: 5492848
    Abstract: A technique for making a MOST capacitor for use in a DRAM cell utilizes silicon nodules after metal etching. The silicon nodules are used as a mask to selectively form deep grooves in a polysilicon electrode of the capacitor.
    Type: Grant
    Filed: March 18, 1994
    Date of Patent: February 20, 1996
    Assignee: United Microelectronics Corp.
    Inventors: Water Lur, Jiunn-Yuan Wu, Cheng-Hen Huang
  • Method for forming most capacitor using poly spacer technique
    Patent number: 5482885
    Abstract: A MOST capacitor for use in a DRAM cell is formed by depositing a conductive polysilicon electrode layer on the substrate. Oxide lines are then formed on the polysilicon layer. Using the oxide lines as a mask, pillars are etched in the polysilicon electrode layer.
    Type: Grant
    Filed: March 18, 1994
    Date of Patent: January 9, 1996
    Assignee: United Microelectronics Corp.
    Inventors: Water Lur, Cheng-Hen Huang