Abstract: A surface electromyography signal-torque matching method based on multi-segmentation parallel CNN model (MSP-CNN model), step 1: collecting torque signals and surface electromyography (sEMG) signals when tightening a bolt; step 2: dividing a range of a transducer by at least two granularities, generating a plurality of torque sub-ranges corresponding to the at least two granularities and labeling the plurality of torque sub-ranges with torque labels; step 3: generating sEMG graphs of the sEMG signals in each time window; step 4: determining the torque labels of each time window under each of the at least two granularities according to the torque sub-ranges that average values of torques fall in; step 5: establishing a sample set; step 6: building a MSP-CNN model, and training parallel independent CNN models with sample datasets; and step 7: inputting the sEMG signals of the operator during assembly into trained MSP-CNN model and identifying assembly torques.

Abstract: A registration system for robot-oriented augmented reality teaching system, comprising: a physical robot unit, a registration unit, a virtual robot generation unit and a computer; the physical robot unit comprising a physical robot, a physical robot controller and a robot point-to-point intermittent movement control program; the physical robot provided thereon with a physical robot base coordinate system; the physical robot controller connected with the physical robot and the computer respectively; the robot point-to-point intermittent movement control program installed in the computer; the registration unit comprising a registration marker, a camera and a conversion calculation unit; the registration marker arranged on the physical robot body; the camera fixed in a physical environment except the physical robot; the camera connected with the computer, and the conversion calculation unit arranged in the computer; the virtual robot generation unit arranged in the computer and used for generating a virtual robo

Abstract: An automatic nucleic acid detection system and a method thereof are disclosed. The automatic nucleic acid detection method includes: performing, by an automatic control subsystem, on a nucleic acid extraction machine platform, a nucleic acid extraction on one or more specimens in a sample tray to generate one or more corresponding nucleic acids in the sample tray; distributing, by the automatic control subsystem, on a nucleic acid distribution machine platform, the nucleic acid in each hole of the sample tray and a first reagent into a plurality of holes of a detection tray, wherein the number of holes of the detection tray is greater than that of the sample tray; and performing, by the automatic control subsystem, on a nucleic acid detection machine platform, a nucleic acid detection on the detection tray.

Abstract: A package structure includes a first substrate, a second substrate disposed on the first substrate, a third substrate disposed on the second substrate, and multiple chips mounted on the third substrate. A second coefficient of thermal expansion (CTE) of the second substrate is less than a first CTE of the first substrate. The third substrate includes a first sub-substrate, a second sub-substrate in the same level with the first sub-substrate, a third sub-substrate in the same level with the first sub-substrate. A CTE of the first sub-substrate, a CTE of the second sub-substrate, and a CTE of the third sub-substrate are less than the second CTE of the second substrate.

Abstract: The production system of chlorine dioxide solution includes a water storage device, an electrolyte storage device, an electrolytic device, a reaction device, a storage device, a cooling device, and a cleaning device. These devices jointly work together to manufacture chlorine dioxide solution systematically and in mass production.

Abstract: The production system of chlorine dioxide solution includes a water storage device, an electrolyte storage device, an electrolytic device, a reaction device, a storage device, a cooling device, and a cleaning device. These devices jointly work together to manufacture chlorine dioxide solution systematically and in mass production.

Abstract: The production system of chlorine dioxide solution includes a water storage device, an electrolyte storage device, an electrolytic device, a reaction device, a storage device, a cooling device, and a cleaning device. These devices jointly work together to manufacture chlorine dioxide solution systematically and in mass production.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract: A semiconductor device used for conversion between light and electricity, comprising a semiconductor stack comprising an upper surface; and an upper electrode formed on the semiconductor stack and comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a width varying along a first direction thereof, and each of the second electrodes has a uniform width along a second direction thereof.

Abstract: A concentrated photovoltaic cell comprises a semiconductor stack comprising an upper surface and a lower surface opposite to the upper surface, wherein the upper surface is operable to absorb a light which comprises a light intensity distribution on the upper surface; and an upper electrode formed on the upper surface of the semiconductor stack and comprising an electrode pattern approximately corresponding to the light intensity distribution, wherein the light intensity distribution comprises a high light-concentrated area having a first light intensity and a low light-concentrated area having a second light intensity, wherein the second light intensity is lower than the first light intensity.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract: An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

Abstract: A display screen assembly is provided. The display screen defines a channel for allowing selective engagement of the display screen. A mount assembly is provided and includes a base for supporting the display screen assembly about a support surface, and a locking assembly that selectively engages the channel to thereby lock the mount assembly to the display screen.

Abstract: A display screen assembly is provided. The display screen defines a channel for allowing selective engagement of the display screen. A mount assembly is provided and includes a base for supporting the display screen assembly about a support surface, and a locking assembly that selectively engages the channel to thereby lock the mount assembly to the display screen.

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract: An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

Abstract: An optoelectronic semiconductor device includes: an optoelectronic semiconductor stack including an upper surface; and a metal electrode structure formed on the optoelectronic semiconductor stack, wherein the metal electrode structure comprises a side surface including oxidized metal formed by oxidizing the metal electrode structure.

Abstract: A light-emitting device comprising: a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; a semiconductor structure formed on the first surface of the substrate, comprising a first type semiconductor layer, an active layer and a second type semiconductor layer; and an isolation region separating at least the active layer into a first part and a second part, wherein the first part is capable of generating the electromagnetic radiation, and the second part comprises a breakdown diode.

Abstract: A tilt assembly for a display screen is provided. The tilt assembly includes a base assembly that includes a base casing configured to engage with a proximally positioned surface and a base plate configured to cooperatively form the tilt assembly with the base casing. The base plate is configured to translate aft and fore and impart a pivot to the display screen.