Abstract: A charging device includes a liquid cooled cable, a charging gun, a charging station, a station connector and a communicating pipe. The liquid cooled cable has a gun end and a station end. The liquid cooled cable includes a first insulating tube, a second insulating tube, a tape, a filler and a sheath. The first insulating tube has a first channel. The second insulating tube has a second channel and a braided copper mesh. The charging gun is connected to the gun end of the liquid cooled cable. The charging gun includes a gun connector and a first liquid return channel. The station connector includes a second liquid return channel and a connection part. One end of the second liquid return channel communicates to the second channel. The connection part is connected to the station end of the liquid cooled cable.

Abstract: The production system of chlorine dioxide solution includes a water storage device, an electrolyte storage device, an electrolytic device, a reaction device, a storage device, a cooling device, and a cleaning device. These devices jointly work together to manufacture chlorine dioxide solution systematically and in mass production.

Abstract: The production system of chlorine dioxide solution includes a water storage device, an electrolyte storage device, an electrolytic device, a reaction device, a storage device, a cooling device, and a cleaning device. These devices jointly work together to manufacture chlorine dioxide solution systematically and in mass production.

Abstract: The production system of chlorine dioxide solution includes a water storage device, an electrolyte storage device, an electrolytic device, a reaction device, a storage device, a cooling device, and a cleaning device. These devices jointly work together to manufacture chlorine dioxide solution systematically and in mass production.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract: A semiconductor device used for conversion between light and electricity, comprising a semiconductor stack comprising an upper surface; and an upper electrode formed on the semiconductor stack and comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a width varying along a first direction thereof, and each of the second electrodes has a uniform width along a second direction thereof.

Abstract: A concentrated photovoltaic cell comprises a semiconductor stack comprising an upper surface and a lower surface opposite to the upper surface, wherein the upper surface is operable to absorb a light which comprises a light intensity distribution on the upper surface; and an upper electrode formed on the upper surface of the semiconductor stack and comprising an electrode pattern approximately corresponding to the light intensity distribution, wherein the light intensity distribution comprises a high light-concentrated area having a first light intensity and a low light-concentrated area having a second light intensity, wherein the second light intensity is lower than the first light intensity.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract: An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

Abstract: A display screen assembly is provided. The display screen defines a channel for allowing selective engagement of the display screen. A mount assembly is provided and includes a base for supporting the display screen assembly about a support surface, and a locking assembly that selectively engages the channel to thereby lock the mount assembly to the display screen.

Abstract: A display screen assembly is provided. The display screen defines a channel for allowing selective engagement of the display screen. A mount assembly is provided and includes a base for supporting the display screen assembly about a support surface, and a locking assembly that selectively engages the channel to thereby lock the mount assembly to the display screen.

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract: An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.

Abstract: An optoelectronic semiconductor device includes: an optoelectronic semiconductor stack including an upper surface; and a metal electrode structure formed on the optoelectronic semiconductor stack, wherein the metal electrode structure comprises a side surface including oxidized metal formed by oxidizing the metal electrode structure.

Abstract: A light-emitting device comprising: a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; a semiconductor structure formed on the first surface of the substrate, comprising a first type semiconductor layer, an active layer and a second type semiconductor layer; and an isolation region separating at least the active layer into a first part and a second part, wherein the first part is capable of generating the electromagnetic radiation, and the second part comprises a breakdown diode.

Abstract: A concentrated photovoltaic cell comprises a semiconductor stack comprising an upper surface and a lower surface opposite to the upper surface, wherein the upper surface is operable to absorb a light which comprises a light intensity distribution on the upper surface; and an upper electrode formed on the upper surface of the semiconductor stack and comprising an electrode pattern approximately corresponding to the light intensity distribution, wherein the light intensity distribution comprises a high light-concentrated area having a first light intensity and a low light-concentrated area having a second light intensity, wherein the second light intensity is lower than the first light intensity.

Abstract: A tilt assembly for a display screen is provided. The tilt assembly includes a base assembly that includes a base casing configured to engage with a proximally positioned surface and a base plate configured to cooperatively form the tilt assembly with the base casing. The base plate is configured to translate aft and fore and impart a pivot to the display screen.

Abstract: The present invention is related to a system for monitoring radon emissions to predict earthquakes. In one embodiment, the present invention relates to a radon monitoring system that is designed to remotely monitor the release of radon gas and to use such data in the prediction of earthquakes.

Abstract: The present disclosure provides a multi-directional solar energy collector system. It comprises a light concentration device which includes one or plural light concentration lens and one or plural chambers. By means of the light concentration device, the incoming light can be concentrated once or multiple time, then is guided to the solar cell. The system is able to collect incoming light from various directions without consuming additional power.