Abstract: The present disclosure provides a semiconductor device structure with fine patterns and a method for forming the semiconductor device structure, which prevents the collapse of the fine patterns. The semiconductor device structure includes a first target structure and a second target structure disposed over a semiconductor substrate. The semiconductor device structure also includes a first spacer element disposed over the first target structure, wherein a topmost point of the first spacer element is between a central line of the first target structure and a central line of the second target structure in a cross-sectional view.

Abstract: An integrated circuit includes a first circuit, formed based on one or more Group III-V compound materials, that is configured to operate with a first voltage range. The integrated circuit includes a second circuit, also formed based on the one or more Group III-V compound materials, that is operatively coupled to the first circuit and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range. The integrated circuit includes a set of first test terminals connected to the first circuit. The integrated circuit includes a set of second test terminals connected to the second circuit. Test signals applied to the set of first test terminals and to the set of second test terminals, respectively, are independent from each other.

Abstract: Systems, devices, and methods are described herein for aligning a phase of a ring oscillator and removing jitter. An oscillator includes a resistor bank array, an operational amplifier, a first and second transistor, and a realignment circuit. The resistor bank array has a plurality of resistors configured to generate a first signal. The operational amplifier is coupled to a PLL circuit and is configured to compare a voltage of the PLL circuit with a voltage of the resistor bank array. The first transistor is coupled between the operational amplifier and a ring oscillator. The first transistor is configured to generate a second signal to control a frequency of the ring oscillator during a realignment state. The realignment circuit is coupled to the first transistor and the ring oscillator. The realignment circuit is configured to generate a realignment signal to align the ring oscillator with a first clock signal.

Abstract: The present disclosure provides a semiconductor memory structure, including a substrate, a gate structure, a first shallow trench isolation (STI), and a second STI. The gate structure, the first STI, and a second STI are disposed in the substrate. The gate structure is buried in the substrate. The gate structure is disposed between the first STI and the second STI.

Abstract: A memory socket includes a frame having a base portion and a side portion, and a push-eject locking mechanism in physical communication with the base portion and with the side portion. The push-eject locking mechanism to transition between an unlocked position and a locked position. The push-eject locking mechanism includes an eject bar component and a lever component. The weight of the eject bar component biases the push-eject locking mechanism towards the unlocked position. Based on a force being exerted on the lever component, the lever component pivots and transition the push-eject locking mechanism from the unlocked position to the locked position.

Abstract: A method for preparing a semiconductor device structure includes forming a nitrogen-containing pattern over a semiconductor substrate. The method also includes performing an energy treating process to form a transformed portion in the semiconductor substrate and covered by the nitrogen-containing pattern. The method further includes etching the semiconductor substrate such that the transformed portion is surrounded by an opening structure.

Abstract: This disclosure is directed to a circuit that includes a substrate, a target device on the substrate, and an electrostatic discharge (ESD) device electrically coupled to the target device. The ESD device includes an ESD detection circuit electrically coupled to a first reference voltage supply and a second reference voltage supply, an inverter circuit electrically coupled to the ESD detection circuit and configured to trigger in response to an ESD event on the first or second reference voltage supply, a rectifier circuit electrically coupled to the inverter circuit and configured to rectify a current discharged from the inverter circuit, and a transistor electrically coupled to the rectifier circuit and configured to discharge a remaining current passing through the rectifier circuit.

Abstract: A method for reducing wafer edge defects is provided. The method includes providing a wafer with a central region and an edge region, forming a hard mask layer on the wafer, forming a spacer pattern on the hard mask layer, forming a photoresist layer covering the spacer pattern, performing a wafer edge treatment process on the photoresist layer to form an annular photoresist pattern, using the annular photoresist pattern as an etching mask, and sequentially transferring the exposed spacer pattern to the hard mask layer and the wafer to form a plurality of trenches in the wafer.

Abstract: A device and a method for robotic arm automatic correction are disclosed. A main structure includes a robotic arm including an optical photographing mechanism, and a wafer storage mechanism at one side of the robotic arm and including a graphic data code. The optical photographing mechanism is in information connection with an optical recognition module that includes a data code analysis unit, an object distance analysis unit, and a wafer center analysis unit. A user uses the optical photographing mechanism to photograph the graphic data code for implementing a first round of position correction for the robotic arm. Then, the optical photographing mechanism photographs a wafer and performs an operation of focusing for calculation of a distance between the robotic arm and a center point of the wafer by means of the object distance analysis unit in combination with the wafer center analysis unit for a second round of correction.

Abstract: Disclosed in a robotic arm with vibration detection and image recognition, of which a main structure includes a wafer transportation device, a robotic arm rotatably mounted on the wafer transportation device, an image acquiring device arranged on the robotic arm, at least one first vibration detector arranged on the robotic arm, a second vibration detector arranged in an interior of the wafer transportation device, and a monitoring device arranged at one side of the wafer transportation device. The monitoring device includes a status inspecting part in information connection with the image acquiring device and a vibration inspecting part in information connection with the first vibration detector and the second vibration detector. By means of the above structure, the robotic arm is additionally provided with functions of wafer storage status inspecting, impact sensing, and lifespan predicting, so as to prevent mutual influence between machine structure operation instability and inspection error.

Abstract: An integrated circuit includes a first circuit, formed based on one or more Group III-V compound materials, that is configured to operate with a first voltage range. The integrated circuit includes a second circuit, also formed based on the one or more Group III-V compound materials, that is operatively coupled to the first circuit and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range. The integrated circuit includes a set of first test terminals connected to the first circuit. The integrated circuit includes a set of second test terminals connected to the second circuit. Test signals applied to the set of first test terminals and to the set of second test terminals, respectively, are independent from each other.

Abstract: An integrated circuit (IC) including a plurality of finfet cells designed with digital circuit design rules to provide smaller finfet cells with decreased cell heights, and analog circuit cell structures including first finfet cells of the plurality of finfet cells and including at least one cut metal layer. The smaller finfet cells with decreased cell heights provide a first shorter metal track in one direction and the at least one cut metal layer provides a second shorter metal track in another direction to increase maximum electromigration currents in the integrated circuit.

Abstract: A method for preparing a semiconductor device structure includes forming a nitrogen-containing pattern over a semiconductor substrate. The method also includes performing an energy treating process to form a transformed portion in the semiconductor substrate and covered by the nitrogen-containing pattern. The method further includes etching the semiconductor substrate such that the transformed portion is surrounded by an opening structure.

Abstract: Semiconductor structures, die stack structures, and fabrication methods are provided. In one example, a semiconductor structure includes a die having a test pad disposed on a front side of the die. The test pad has a probe mark in an upper portion of the test pad. The probe mark has an open end at a top surface of the test pad, a bottom wall, a sidewall connected to the bottom wall, and a space between the open end, the bottom wall and the sidewall. The semiconductor structure further includes a first cover layer and a second cover layer. The first cover layer is disposed on the front side of the first test pad and the sidewall and the bottom wall of the probe mark. The second cover layer is disposed on the first cover layer. The first and second cover layers comprise different materials.

Abstract: An optical fiber fixing structure is provided. The optical fiber fixing structure includes a body and a fixing element. One or more transition recesses and one or more positioning recesses are formed on the body. The fixing element includes a rod, one or more tapered holes and a clamping element. The rod is rotatably disposed on the body. One or more tapered holes are configured to guide one or more optical fibers from the one or more transition recesses to the one or more positioning recesses when the rod is configured in a first state. The clamping element is configured to clamp the one or more optical fibers between the clamping element and the one or more positioning recesses when the rod is configured in a second state.

Abstract: Semiconductor structures and fabrication methods are provided. In one example, a method includes forming a first dielectric layer on a semiconductor structure. The semiconductor structure includes a substrate and a multi-layer interconnect (MLI) structure on the substrate. The MLI structure includes multiple metallization layers. The first dielectric layer is formed on a topmost metallization layer. The method further includes forming a through-substrate-via (TSV) opening extending vertically through the first dielectric layer and the multiple metallization layers into the substrate, forming a TSV in the TSV opening, performing a first planarization process to planarize the TSV, forming multiple first metal vias and first metal lines in the first dielectric layer after the first planarization process, forming multiple first metal capping layers respectively on the multiple first metal lines, and performing a second planarization process to planarize the first metal capping layers.

Abstract: The present disclosure describes a semiconductor device having artificial field plates. The semiconductor device includes a first gallium nitride (GaN) layer on a substrate, an aluminum gallium nitride (AlGaN) layer on the first GaN layer, and a second GaN layer on the AlGaN layer. The first and second GaN layers includes different types of dopants. The semiconductor device further includes a gate contact structure in contact with the second GaN layer, first and second source/drain (S/D) contact structures in contact with the AlGaN layer, one or more artificial field plates between the gate contact structure and the first S/D contact structure. The first and second S/D contact structures are disposed at opposite sides of the gate contact structure. The one or more artificial field plates are separated from the first and second S/D contact structures and above the AlGaN layer.

Abstract: A multiple function button for an information handling system includes an outer button and an inner button. The outer button includes a first contact component positioned over a first contact of the information handling system. The first contact is associated with a first operation within the information handling system. The inner button is inserted within the outer button and includes a second contact component. The second contact component is positioned over a second contact of the information handling system, which in turn is associated with a second operation within the information handling system.

Abstract: A semiconductor device includes in a transistor layer, components of corresponding transistors (transistor components); in corresponding layers below the transistor layer (sub-TR layers), various non-dummy structures (non-dummy sub-TR structures) coupled to the transistor components and which are included because the semiconductor device has a buried power rail (BPR) architecture; and in corresponding layers over the transistor layer (supra-TR layers), various dummy structures (dummy supra-TR structures) which are included as artifacts resulting from the semiconductor device being based on a dual-architecture-compatible design which is substantially equally suitable either to adaptation into a non-BPR architecture or adaptation into the BPR architecture; and the semiconductor device being an inductor.

Abstract: A computerized method for utilizing private Internet Protocol (IP) addressing for communications between components of one or more public cloud networks. The method features determining whether outbound traffic corresponds to a first type of outbound traffic being forwarded from a cloud instance supported by the gateway. In response to determining that the first type of outbound traffic is being forwarded from the cloud instance, the first type of outbound traffic is directed via a data interface of the gateway. Also, the method features determining whether the outbound traffic corresponds to a second type of outbound traffic being initiated by logic within the gateway. In response to determining that the second type of outbound traffic is being initiated by logic within the gateway, directing the second type of outbound traffic via a management interface of the gateway.