Abstract: An edge emitting laser (EEL) device includes a substrate, an n-type buffer layer, a first n-type cladding layer, a grating layer, a spacer layer, a lower confinement unit, an active layer, an upper confinement unit, a p-type cladding layer, a tunnel junction layer and a second n-type cladding layer sequentially arranged from bottom to top. The tunnel junction layer can stop an etching process from continuing to form the second n-type cladding layer into a predetermined ridge structure and converting a part of the p-type cladding layer into the n-type cladding layer to reduce series resistance of the EEL device. Therefore, the optical field and active layer tend to be coupled at the middle of the active layer, the lower half of the active layer can be utilized effectively, and the optical field is near to the grating layer to achieve better optical field/grating coupling efficiency and lower threshold current.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.

Abstract: A real-time gas leakage monitoring system applicable for a vacuum device includes an exhaust device connected to an exhaust end of the vacuum device. In addition to the use of the exhaust device for exhausting a gas from the vacuum device, a mass flow controller can also be connected to the exhaust end to receive the gas exhausted from the vacuum cavity and control a mass flow as a basis to determine a gas leakage setting value, and then a gas leakage detector is used to detect water and oxygen in the gas exhausted from the vacuum cavity. When water and oxygen are detected in the exhaust gas, it indicates a gas leakage status, and a warning signal can be outputted immediately to achieve the real-time gas leakage monitoring effect.

Abstract: A light emitting element includes a substrate, a lower cladding layer, a lower confinement layer, an active layer, an upper confinement layer, an upper cladding layer, a tunnel junction layer, a window layer and an upper electrode sequentially arranged from bottom to top. The tunnel junction layer is for converting the window layer and upper electrode from the p-type of a traditional LED to the n-type of the light emitting element of this disclosure. Since the n-type window layer has a resistance much smaller than that of the p-type window layer, the window layer of this disclosure has low resistance and good current spreading effect to improve the light emitting efficiency. Since the n-type upper electrode has a resistance much lower than that of the p-type upper electrode, the n-type upper electrode of this disclosure is more conducive to ohmic contact than the p-type upper electrode of the traditional LED.

Abstract: An edge emitting laser (EEL) device includes a substrate, an n-type buffer layer, a first n-type cladding layer, a grating layer, a spacer layer, a lower confinement unit, an active layer, an upper confinement unit, a p-type cladding layer, a tunnel junction layer and a second n-type cladding layer sequentially arranged from bottom to top. The tunnel junction layer can stop an etching process from continuing to form the second n-type cladding layer into a predetermined ridge structure and converting a part of the p-type cladding layer into the n-type cladding layer to reduce series resistance of the EEL device. Therefore, the optical field and active layer tend to be coupled at the middle of the active layer, the lower half of the active layer can be utilized effectively, and the optical field is near to the grating layer to achieve better optical field/grating coupling efficiency and lower threshold current.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, an active layer, an oxide layer, a second mirror layer, a tunnel junction layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer and a third mirror layer sequentially stacked with one another. The first mirror layer and the third mirror layer are N-type distributed Bragg reflectors (N-DBR), and the second mirror layer is P-type distributed Bragg reflector (P-DBR). The tunnel junction layer is provided for the VCSEL device to convert a part of the P-DBR into N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer is not used as current-limiting apertures. This disclosure further discloses a VCSEL device manufacturing method with the in-situ and one-time epitaxy features to avoid the risk of process variation caused by moving the device into and out from an epitaxial cavity.