Abstract: A three-dimensional chip stack includes a first chip bonded to a second chip to form a bonded interconnection therebetween. The bonded interconnection includes a first conductive pillar overlying a first substrate of the first chip, a second conductive pillar overlying a second substrate of the second chip, and a joint structure between the first conductive pillar and the second conductive pillar. The joint structure includes a first IMC region adjacent to the first conductive pillar, a second IMC region adjacent to the second conductive pillar, and a metallization layer between the first IMC region and the second IMC region.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.

Abstract: An assembled wearable electronic device includes a first body, a second body and an engaging assembly. The first body has a primary system for providing the independent operation of the first body and producing a related first data. The second body has a secondary system and a fixing assembly. The secondary system is for providing the independent operation of the second body and producing a related second data. The engaging assembly is disposed at one of the first and second bodies. When the engaging assembly is located at a first position, the first and second bodies contact each other to be combined through the engaging assembly. When the engaging assembly moves to a second position, the first and second bodies are configured to be separated from each other. When the first and second bodies are connected to each other, the second data is read by the primary system.

Abstract: A three-dimensional chip stack includes a first chip bonded to a second chip to form a bonded interconnection therebetween. The bonded interconnection includes a first conductive pillar overlying a first substrate of the first chip, a second conductive pillar overlying a second substrate of the second chip, and a joint structure between the first conductive pillar and the second conductive pillar. The joint structure includes a first IMC region adjacent to the first conductive pillar, a second IMC region adjacent to the second conductive pillar, and a metallization layer between the first IMC region and the second IMC region.

Abstract: A catalytic article for destruction of a volatile organic compound includes a porous carrier body, a plurality of catalyst units formed on the carrier body and adapted for destruction of the volatile organic compound, and a plurality of trapping molecules bound to the carrier body. Each of the catalyst units is composed of one of a noble metal, a transition metal oxide, and the combination thereof. Each of the trapping molecules includes at least one functional group that is adapted for attracting or binding the volatile organic compound. A method for preparing the catalytic article is also disclosed.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.

Abstract: A catalytic article for decomposition of a volatile organic compound includes a porous support body, a plurality of active centers formed on the support body and adapted for catalytic decomposition of the volatile organic compound, and a plurality of capture centers bound to the support body. Each of the active centers is composed of one of a noble metal, a transition metal oxide, and the combination thereof. Each of the capture centers includes at least one functional group that is adapted for attracting or binding the volatile organic compound. A method for preparing the catalytic article is also disclosed.