Patents by Inventor Cheng-Hsing Chen
Cheng-Hsing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11979980Abstract: A first and second patterned circuit layer are formed on a first surface and a second surface of a base material. A first adhesive layer is formed on the first patterned circuit layer. A portion of the first surface is exposed by the first patterned circuit layer. The metal reflection layer covers the first insulation layer and a reflectance thereof is greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer, and the first adhesive layer is disposed between the first patterned circuit layer and the first insulation layer. A transparent adhesive layer and a protection layer are formed on the metal reflection layer. The transparent adhesive layer is disposed between the metal reflection layer and the protection layer. The protection layer comprises a transparent polymer. The light transmittance is greater than or equal to 80%.Type: GrantFiled: August 19, 2021Date of Patent: May 7, 2024Assignee: UNIFLEX Technology Inc.Inventors: Cheng-I Tu, Ying-Hsing Chen, Meng-Huan Chia, Hsin-Ching Su, Yi-Chun Liu, Cheng-Chung Lai, Yuan-Chih Lee
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Patent number: 11959101Abstract: A cell activation reactor and a cell activation method are provided. The cell activation reactor includes a body, a rotating part, an upper cover, a microporous film, and multiple baffles. The body has an accommodating space, which is suitable for accommodating multiple cells and multiple magnetic beads. The rotating part is disposed in the accommodating space and includes multiple impellers. The microporous film is disposed in the accommodating space and covers multiple holes of the accommodating space. The baffles are disposed in the body. When the rotating part is driven to rotate, the interaction between the baffles and the impellers separates the cells and the magnetic beads.Type: GrantFiled: November 26, 2021Date of Patent: April 16, 2024Assignee: Industrial Technology Research InstituteInventors: Ting-Hsuan Chen, Kuo-Hsing Wen, Ya-Hui Chiu, Nien-Tzu Chou, Ching-Fang Lu, Cheng-Tai Chen, Ting-Shuo Chen, Pei-Shin Jiang
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Patent number: 11937370Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.Type: GrantFiled: September 1, 2021Date of Patent: March 19, 2024Assignee: UNIFLEX Technology Inc.Inventors: Cheng-I Tu, Ying-Hsing Chen, Meng-Huan Chia, Hsin-Ching Su, Yi-Chun Liu, Cheng-Chung Lai, Yuan-Chih Lee
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Publication number: 20240071281Abstract: A display device includes a display panel and a circuit. For a first sub-pixel, the circuit obtains a corresponding second sub-pixel. The circuit calculates a first compensation value according to the grays levels of the first sub-pixel and the second sub-pixel, and calculates a second compensation value according to the polarity states of the first sub-pixel and the second sub-pixel and the difference between the gray levels of the two sub-pixels. The circuit also calculates a gain according to the position of the first sub-pixel, compensates the gray level to the first sub-pixel according to the first compensation value, the second compensation value and the gain to obtain an output gray level, and drives the first sub-pixel according to the output gray level.Type: ApplicationFiled: June 16, 2023Publication date: February 29, 2024Inventors: Cheng-Hsun LEE, Tsai Hsing CHEN, Cheng Che TSAI, Ching-Wen WANG
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Patent number: 8640544Abstract: The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.Type: GrantFiled: August 24, 2011Date of Patent: February 4, 2014Assignee: National Taiwan University of Science and TechnologyInventors: Wei-Feng Lee, Cheng-Hsing Chen, Yi-Chun Lai, Hsing-Tai Mei
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Patent number: 8290718Abstract: The invention relates bridge structure safety evaluation technology by means of combining vibration measuring and structural model analysis techniques for bridge erosion evaluation and pre-warning monitoring applications. This technology can also be applied for long-term bridge structure monitoring and safety evaluation as well as judgment and evaluation of rail structure abnormality.Type: GrantFiled: January 5, 2010Date of Patent: October 16, 2012Inventors: Wei-Feng Lee, Cheng-Hsing Chen, Chia-Feng Chang, Hsing-Tai Mei
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Publication number: 20120204646Abstract: The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.Type: ApplicationFiled: August 24, 2011Publication date: August 16, 2012Applicant: National Taiwan University of Science and TechnologyInventors: Wei-Feng Lee, Cheng-Hsing Chen, Yi-Chun Lai, Hsing-Tai Mei
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Publication number: 20100242609Abstract: The invention relates bridge structure safety evaluation technology by means of combining vibration measuring and structural model analysis techniques for bridge erosion evaluation and pre-warning monitoring applications. This technology can also be applied for long-term bridge structure monitoring and safety evaluation as well as judgment and evaluation of rail structure abnormality.Type: ApplicationFiled: January 5, 2010Publication date: September 30, 2010Inventors: WEI-FENG LEE, CHENG-HSING CHEN, CHIA-FENG CHANG, HSING-TAI MEI
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Patent number: 7632694Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.Type: GrantFiled: March 15, 2006Date of Patent: December 15, 2009Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., AU Optronics Corp., Quanta Display Inc., Hannstar Display Corp., Chi Mei Optoelectronics Corp., Industrial Technology Research Institute, Toppoly Optoelectronics Corp.Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen
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Publication number: 20060202203Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.Type: ApplicationFiled: March 15, 2006Publication date: September 14, 2006Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen
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Patent number: 7045817Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.Type: GrantFiled: October 15, 2004Date of Patent: May 16, 2006Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corp, Quanta Display Inc., Hannstar Display Corp, Chi Mei Optoelectronics Corp., Industrial Technology Research Institute, Toppoly Optoelectronics Corp.Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen
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Publication number: 20050274947Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.Type: ApplicationFiled: October 15, 2004Publication date: December 15, 2005Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen