Abstract: The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.

Abstract: The invention relates bridge structure safety evaluation technology by means of combining vibration measuring and structural model analysis techniques for bridge erosion evaluation and pre-warning monitoring applications. This technology can also be applied for long-term bridge structure monitoring and safety evaluation as well as judgment and evaluation of rail structure abnormality.

Abstract: The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.

Abstract: The invention relates bridge structure safety evaluation technology by means of combining vibration measuring and structural model analysis techniques for bridge erosion evaluation and pre-warning monitoring applications. This technology can also be applied for long-term bridge structure monitoring and safety evaluation as well as judgment and evaluation of rail structure abnormality.

Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.