Abstract: A method of forming a semiconductor device is provided. A material layer, a first flowing material layer and a first mask layer are sequentially formed on a substrate. A first etching process is performed by using the first mask layer as a mask, so as to form a first opening in the material layer. The first mask layer and the first flowing material layer are removed. A filler layer is formed in the first opening. A second flowing material layer is formed on the material layer and the filler layer. A second mask layer is formed on the second flowing material layer. A second etching process is performed by using the second mask layer as a mask, so as to form a second opening in the material layer.

Abstract: A method of forming a semiconductor device is provided. A material layer, a first flowing material layer and a first mask layer are sequentially formed on a substrate. A first etching process is performed by using the first mask layer as a mask, so as to form a first opening in the material layer. The first mask layer and the first flowing material layer are removed. A filler layer is formed in the first opening. A second flowing material layer is formed on the material layer and the filler layer. A second mask layer is formed on the second flowing material layer. A second etching process is performed by using the second mask layer as a mask, so as to form a second opening in the material layer.

Abstract: A patterning method is provided. A mask composite layer and a first tri-layer photoresist are sequentially formed on a target layer. A first etching is performed to the mask composite layer, using the first tri-layer photoresist as a mask, to form at least one first opening in an upper portion of the mask composite layer. The first tri-layer photoresist is removed. A second tri-layer photoresist is formed on the mask composite layer. A second etching is performed to the mask composite layer, using the second tri-layer photoresist as a mask, to form at least one second opening in the upper portion of the mask composite layer. The second tri-layer photoresist is removed. A lower portion of the mask composite layer is patterned by using the upper portion of the mask composite layer as a mask. The target layer is patterned by using the patterned mask composite layer as a mask.

Abstract: The invention is directed to a method for manufacturing an image sensor device. The method comprises steps of forming a photodiode and a transistor on a substrate. A salicide block is formed over a photo-sensing region of the photodiode. An interconnects processes is performed several times to forming a plurality of dielectric layers over the substrate and interconnects between the dielectric layers. A photolithography and etching process is performed to remove the dielectric layers over the photo-sensing region to expose the salicide block over the photo-sensing region.

Abstract: The invention is directed to a method for manufacturing an image sensor device. The method comprises steps of forming a photodiode and a transistor on a substrate. A salicide block is formed over a photo-sensing region of the photodiode. An interconnects processes is performed several times to forming a plurality of dielectric layers over the substrate and interconnects between the dielectric layers. A photolithography and etching process is performed to remove the dielectric layers over the photo-sensing region to expose the salicide block over the photo-sensing region.