Abstract: A job matching method that matches applicants with employers is revealed. The job matching method includes steps of providing a plurality pieces of capability information of a job seeker, creating a capability map by quantifying the pieces of capability information, and matching the capability map with a plurality of recruitment requirements. Thus the job applicant's capabilities are shown by the capability map clearly and the employers find qualified candidates more quickly. The length of the interview is reduced and the recruitment period is minimized. Therefore, the recruitment is more efficient.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.

Abstract: A non-volatile memory having a gate structure, a pair of storage units and two assist gates is provided. The gate structure is disposed on the substrate. The storage units are disposed on the sidewalls of the gate structure. The assist gates are disposed on the respective sides of the gate structure and adjacent to the storage units. Each assist gate is shared between two adjacent memory cells. The gate structure, the storage units and the assist gates are electrically isolated from one another.

Abstract: A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.