Abstract: An electronic device includes a substrate, a signal line, a semiconductor, a first conductive portion and a second conductive portion. The signal line is disposed on the substrate. The semiconductor is disposed on the substrate and overlapped with the signal line. Wherein the semiconductor is electrically connected to the first conductive portion and the second conductive portion. Wherein in a top view, at least a portion of the signal line is disposed between the first conductive portion and the second conductive portion. Wherein the first conductive portion has a first curve edge, the second conductive portion has a second curve edge, and the first curve edge and the second curve edge are facing the at least a portion of the signal line and are convex toward the at least a portion of the signal line.

Abstract: A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.

Abstract: A microneedle device includes a substrate and a plurality of microneedle structures. The substrate is provided with a first surface, where the first surface has a surface roughness ranged from 0.05 ?m to 2.0 ?m. The plurality of microneedle structures are configured on the first surface. Because the surface of the microneedle device has a surface roughness of 0.05 ?m to 2.0 ?m, a film can be formed completely.

Abstract: An improved leak-proof heat dissipation structure of high thermal conductivity materials includes an insulating film layer, a high thermal conductivity thermal interface material layer, a first flexible material composite layer, a second flexible material composite layer and a radiator. The insulating film layer has a film opening at the center. The high thermal conductivity thermal interface material layer has its body close to the heat source and located above the chip body. The first flexible material composite layer is set above the insulating film layer, and has a first opening at the center. The second flexible material composite layer is provided below the insulating film layer, and has a second opening at the center. The radiator is placed on the first flexible material composite layer, and has a boss at the bottom and multiple storage grooves on the boss.

Abstract: A detecting system using a spectrum measurement device and detecting an object is provided. The system includes: a sampling module and spectrum measurement devices assembled to the sampling module. The sampling module provides an illumination beam to the object and collects measurement beams reflected by the object to the spectrum measurement devices. The illumination beam has an illumination light waveband. The measurement beams have the illumination light waveband. The spectrum measurement devices include first and second spectrum measurement devices. The first spectrum measurement device includes a digital micromirror device. The measurement beams include first and second measurement beams transmitted to the first and second spectrum measurement devices respectively.

Abstract: An electronic device includes a substrate, a signal line, a semiconductor, a first conductive portion and a second conductive portion. The signal line is disposed on the substrate. The semiconductor is disposed on the substrate and overlapped with the signal line. Wherein the semiconductor is electrically connected to the first conductive portion and the second conductive portion. Wherein in a top view, at least a portion of the signal line is disposed between the first conductive portion and the second conductive portion. Wherein the first conductive portion has a first curve edge, the second conductive portion has a second curve edge, and the first curve edge and the second curve edge are facing the at least a portion of the signal line and are convex toward the at least a portion of the signal line.

Abstract: A thin film transistor substrate includes a substrate, a first conductive element and a semiconductor. The first conductive element is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The semiconductor is disposed on the substrate. The trace portion has a first edge and a second edge opposite to the first edge, and the protrusive portion has at least one curved edge connecting with the second edge. In a top view, a virtual extending line disposes between the trace portion and the protrusive portion, the virtual extending line overlaps the second edge. At least a part of the semiconductor extends beyond the virtual extending line along a second direction vertical to the first direction.

Abstract: A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.

Abstract: A thin film transistor substrate includes a substrate, a first conductive element and a semiconductor. The first conductive element is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The semiconductor is disposed on the substrate. The trace portion has a first edge and a second edge opposite to the first edge, and the protrusive portion has at least one curved edge connecting with the second edge. In a top view, a virtual extending line disposes between the trace portion and the protrusive portion, the virtual extending line overlaps the second edge. At least a part of the semiconductor extends beyond the virtual extending line along a second direction vertical to the first direction.

Abstract: A thin film transistor substrate includes a substrate, a first conductive layer, a second conductive layer and a semiconductor layer. The first conductive layer is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The second conductive layer is disposed on the first conductive layer and includes a wiring portion extending along a second direction. The trace portion has a first edge and a second edge opposite to the first edge, and the protrusive portion has at least one curved edge connecting with the second edge. When viewed in a third direction perpendicular to the first direction and the second direction, an interface disposes between the trace portion and the protrusive portion, a virtual extending line overlaps the second edge and the interface, and the semiconductor layer extends beyond the virtual extending line.

Abstract: A vision test apparatus includes a hollow housing, a converging lens, and a diverging lens. The converging lens is arranged in the hollow housing, and includes a converging focal length. The diverging lens is arranged in the hollow housing at intervals relative to the converging lens, and includes a diverging focal length. Two optical axes of the diverging lens and the converging lens are overlap each other, and the diverging focal length partially overlaps the converging focal length. One end of the hollow housing adjacent to the diverging lens attaches a test optotype displayed by a display apparatus. The diverging lens demagnifies the test optotype to form a first virtual image within the converging focal length. The converging lens magnifies the first virtual image to form a second virtual image for a vision testing.

Abstract: A thin film transistor substrate includes a substrate, a first conductive layer, a second conductive layer and a semiconductor layer. The first conductive layer is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The second conductive layer is disposed on the first conductive layer and includes a wiring portion extending along a second direction. The trace portion has a first edge and a second edge opposite to the first edge, and the protrusive portion has at least one curved edge connecting with the second edge. When viewed in a third direction perpendicular to the first direction and the second direction, an interface disposes between the trace portion and the protrusive portion, a virtual extending line overlaps the second edge and the interface, and the semiconductor layer extends beyond the virtual extending line.

Abstract: In a display device, the display device includes a substrate, a first conductive layer, a second conductive layer, a semiconductor layer, an opposite substrate and a display medium layer. The first conductive layer is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The second conductive layer is disposed on the first conductive layer and includes a wiring portion extending along a second direction. The semiconductor layer is disposed on the substrate. When viewed in a third direction perpendicular to the first direction and the second direction, an interface disposes between the trace portion and the protrusive portion, a virtual extending line overlaps the second edge and the interface, and the semiconductor layer extends beyond the virtual extending line. The display medium layer is disposed between the substrate and the opposite substrate.

Abstract: In a display device, the display device includes a substrate, a first conductive layer, a second conductive layer, a semiconductor layer, an opposite substrate and a display medium layer. The first conductive layer is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The second conductive layer is disposed on the first conductive layer and includes a wiring portion extending along a second direction. The semiconductor layer is disposed on the substrate. When viewed in a third direction perpendicular to the first direction and the second direction, an interface disposes between the trace portion and the protrusive portion, a virtual extending line overlaps the second edge and the interface, and the semiconductor layer extends beyond the virtual extending line. The display medium layer is disposed between the substrate and the opposite substrate.

Abstract: In a display device, the display device includes a substrate, a first conductive layer, a second conductive layer, a semiconductor layer, an opposite substrate and a display medium layer. The first conductive layer is disposed on the substrate and includes a trace portion extending along a first direction and a protrusive portion extending from the trace portion. The second conductive layer is disposed on the first conductive layer and includes a wiring portion extending along a second direction. The semiconductor layer is disposed between the first conductive layer and the second conductive layer. When viewed in a third direction perpendicular to the first direction and the second direction, the semiconductor layer is fully located in the first conductive layer, an edge of the semiconductor layer overlaps the trace portion, and another edge of the semiconductor layer overlaps the protrusive portion. The display medium layer is disposed between the substrate and the opposite substrate.

Abstract: A spectrometer engine and an adjustment method thereof are provided. The spectrometer engine includes a connector, a light sensor, a variable gain amplifier, a variable reference voltage generation circuit, an analog-to-digital converter and a control circuit. The light sensor senses a light to be measured coming from an object to be measured to generate a sensing signal. The variable gain amplifier amplifies the sensing signal according to a first setting parameter to generate an amplified signal. The variable reference voltage generation circuit provides a reference voltage according to a second setting parameter. The analog-to-digital converter converts the amplified signal to a digital signal according to the reference voltage. The control circuit reads the digital signal and adjusts at least one of the first to third setting parameters according to the digital signal for the spectrometer engine to measure the object to be measured again to generate another digital signal.

Abstract: A spectrometer including an optomechanical module and a control module is provided. The optomechanical module includes an optomechanical engine and a sampling device. The optomechanical engine and the sampling device are disposed in the optomechanical module. The sampling device is coupled to the optomechanical engine. The sampling device is configured to transfer a sampling light to the optomechanical engine. The sampling device includes a memory device. The memory device is disposed in the sampling device. The memory device is configured to pre-store an optomechanical parameter corresponding to the optomechanical engine. The control module is coupled to the optomechanical module. The control module is configured to read the memory device to obtain the optomechanical parameter. The control module calibrates the optomechanical engine according to the optomechanical parameter.

Abstract: A spectrometer and a spectrum measurement method thereof are provided. An analog-to-digital converter converts an amplified signal into a digital signal according to a reference voltage provided by a variable reference voltage generation circuit and amplifies the digital signal according to a target signal value, thereby approximating a signal value of the amplified digital signal to the target signal value. A control circuit outputs a spectral signal according to the amplified digital signal. A user can obtain spectrum measurement results that can be easily interpreted by the spectrometer and the spectrum measurement method thereof, without changing hardware or software, so as to improve convenience of use of the spectrometer.

Abstract: A spectrometer engine and an adjustment method thereof are provided. The spectrometer engine includes a connector, a light sensor, a variable gain amplifier, a variable reference voltage generation circuit, an analog-to-digital converter and a control circuit. The light sensor senses a light to be measured coming from an object to be measured to generate a sensing signal. The variable gain amplifier amplifies the sensing signal according to a first setting parameter to generate an amplified signal. The variable reference voltage generation circuit provides a reference voltage according to a second setting parameter. The analog-to-digital converter converts the amplified signal to a digital signal according to the reference voltage. The control circuit reads the digital signal and adjusts at least one of the first to third setting parameters according to the digital signal for the spectrometer engine to measure the object to be measured again to generate another digital signal.

Abstract: An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. Agate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.