Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: A connector is provided that includes an insulation body and a plurality of contacts. The insulation includes a plurality of contact receiving grooves arranged in a row and the plurality of contacts are disposed in the plurality of contact receiving grooves. The plurality of contacts include a first group of contacts and a second group of contacts with a first pair of differential signal contacts and a second pair of differential signal contacts disposed at both sides of the first group of contacts, respectively.

Abstract: A connector is provided that includes an insulation body and a plurality of contacts. The insulation includes a plurality of contact receiving grooves arranged in a row and the plurality of contacts are disposed in the plurality of contact receiving grooves. The plurality of contacts include a first group of contacts and a second group of contacts with a first pair of differential signal contacts and a second pair of differential signal contacts disposed at both sides of the first group of contacts, respectively.