Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.

Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.

Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.

Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.

Abstract: An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.

Abstract: An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.

Abstract: An antioxidant conductive copper paste and a method for preparing the same are revealed. The antioxidant conductive copper paste includes conductive particles, a pasting agent, and a solvent. The conductive particles are copper nanoparticles or copper alloy nanoparticles. The pasting agent can be ethyl cellulose, Poly(3,4-ethylenedioxythiophene) (PEDOT), or epoxy. The solvent can be terpineol, ethylene glycol or diethylene glycol. The antioxidant conductive copper paste with features of high stability and low cost can be applied to produce electrodes of heterojunction solar cells.

Abstract: The present relates to antioxidant conductive copper ink and the method for preparing the same. The antioxidant conductive copper ink comprises nanometer copper or copper-alloy particles, which are used as the conductive particle material, water-free alcohol, which is used as the solvent, tert-butanol and ultra-pure water, which is used as the pasting agent, and carboxylic acid, which is used as the dispersant. Alternatively, isopropanol is used as the pasting agent and glycol is used as the solvent for injecting processes. The antioxidant conductive copper ink disclosed in the present invention owns the properties of high stability and low cost, and hence is applicable to the applications of fabricating the electrodes of silicon-crystal solar cells and printable electronic materials such as PCB or RFID.

Abstract: The invention is to provide a home security system capable of linking to an external communication network. N terminals are capable of linking to the external communication network. The home security system includes M sensing units and a coordinator. Each of the M sensing units includes a sensor and a transmitting module. The coordinator includes a receiving module, a storage device, a communication module, and a processor. The receiving module receives a trigger signal from one of the M transmitting modules. The processor receives the trigger signal received from the receiving module and transmitted by the transmitting module. The processor accesses a contact rule corresponding to the transmitting module, and transmits, according to the accessed contact rule, information to the terminal corresponding to the accessed contact rule through the communication module and over the external communication network.