Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

Abstract: An electronic device includes a conductive wire having a metal portion with openings. The openings include a first opening and a second opening arranged along a first direction, and the metal portion includes the first to fourth extending portions and the first to fourth joint portions. The first opening is surrounded by the first extending portion, the second extending portion, the first joint portion, and the second joint portion. The second opening is surrounded by the third extending portion, the fourth extending portion, the third joint portion, and the fourth joint portion. Along the first direction, a ratio of a first width sum of widths of the first extending portion, the second extending portion, the third extending portion, and the fourth extending portion to a second width sum of widths of the first joint portion and the third joint portion is in a range from 0.8 to 1.2.

Abstract: An integrated circuit (IC) including a plurality of finfet cells designed with digital circuit design rules to provide smaller finfet cells with decreased cell heights, and analog circuit cell structures including first finfet cells of the plurality of finfet cells and including at least one cut metal layer. The smaller finfet cells with decreased cell heights provide a first shorter metal track in one direction and the at least one cut metal layer provides a second shorter metal track in another direction to increase maximum electromigration currents in the integrated circuit.

Abstract: A control circuit for the switching regulator and a method for regulating electrical signal are disclosed. The control circuit for the switching regulator includes a switching regulator and a clock control unit. The switching regulator regulates an output voltage according to a reference voltage and a feedback voltage. The clock control unit is coupled to the switching regulator, and the clock control unit includes an oscillator and a pulse blanking modulator. The oscillator provides an oscillation signal, and the pulse blanking modulator is configured to generate a control signal that blanks a portion of the oscillation signal. The clock control unit provides the control signal in order to maintain an output electrical signal in a sleep mode of the switching regulator within a predetermined range.

Abstract: A headphone is disclosed, which comprises: a first earpiece, formed with a first receiving groove and a first frame in a manner that the first frame is designed to be received inside the first receiving groove; a second earpiece, formed with a second receiving groove and a second frame in a manner that the second frame is designed to be received inside the second receiving groove; and a coupling unit, mounted respectively to a free end of the first frame and a free end of the second frame. In an embodiment, the first frame, the second frame as well as the coupling unit attached thereto can be received inside the first earpiece and the second earpiece in respective, by that the size of the headphone can be reduced for easy depository and carriage.

Abstract: A control circuit for the switching regulator and a method for regulating electrical signal are disclosed. The control circuit for the switching regulator includes a switching regulator and a clock control unit. The switching regulator regulates an output voltage according to a reference voltage and a feedback voltage. The clock control unit is coupled to the switching regulator, and the clock control unit includes an oscillator and a pulse blanking modulator. The oscillator provides an oscillation signal, and the pulse blanking modulator is configured to generate a control signal that blanks a portion of the oscillation signal. The clock control unit provides the control signal in order to maintain an output electrical signal in a sleep mode of the switching regulator within a predetermined range.

Abstract: The present invention is to provide an improved outer layer drumhead structure and more particularly a drumhead structure to prevent from loosening while beating, and to keep the tonality of drumbeat be more tight and accurate, of which the structure is confined by means of the arrangement of a drumhead tetoron cloth and a frame of aluminum rod and aluminum groove channel in a way that the drumhead tetoron cloth is encircled between the aluminum rod and the aluminum groove channel with the outer layer of the drumhead tetoron cloth extending to a reasonable distance along the curved surface so as to provide a better construction against beating and also to give a better tonality while beating.