Patents by Inventor Cheng-Hui TU

Cheng-Hui TU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250237675
    Abstract: A jig and a method for grinding probe pins of a probe card. The jig includes a carrier and a connecting part. The carrier carries a support body with a grinding sheet, and the carrier includes an opening. The support body with the grinding sheet straddles above the opening. The opening may expose a plurality of probe pins of the probe card.
    Type: Application
    Filed: February 4, 2024
    Publication date: July 24, 2025
    Applicant: United Microelectronics Corp.
    Inventors: Yi-Fang Ting, Chiu Hua Wang, Cheng Hui Tu
  • Patent number: 11177321
    Abstract: A resistive random access memory is provided. The resistive random access memory includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and located on one side of the first electrode, a first metal oxide layer formed on sidewalls of the second electrode, a first control layer formed between the first electrode and the first metal oxide layer, and a second control layer formed on the first control layer and located between the first electrode and the first metal oxide layer.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: November 16, 2021
    Assignee: WINBOND ELECTRONICS CORP.
    Inventors: Po-Yen Hsu, Bo-Lun Wu, Shih-Ning Tsai, Cheng-Hui Tu
  • Publication number: 20210126053
    Abstract: A resistive random access memory is provided. The resistive random access memory includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and located on one side of the first electrode, a first metal oxide layer formed on sidewalls of the second electrode, a first control layer formed between the first electrode and the first metal oxide layer, and a second control layer formed on the first control layer and located between the first electrode and the first metal oxide layer.
    Type: Application
    Filed: October 23, 2019
    Publication date: April 29, 2021
    Inventors: Po-Yen HSU, Bo-Lun WU, Shih-Ning TSAI, Cheng-Hui TU
  • Patent number: 10978336
    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer and a through hole passing through the first dielectric layer over a substrate; forming a plurality of dummy contacts in the through hole; forming a plurality of first dummy wires on the plurality of dummy contacts; filling a second dielectric layer between the plurality of first dummy wires, wherein the second dielectric layer has a first air gap; removing the dummy contacts and the first dummy wires to expose the through hole, thereby forming a first wiring trench over the through hole; and forming a contact and a first wire in the through hole and the first wiring trench.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: April 13, 2021
    Assignee: Winbond Electronics Corp.
    Inventors: Cheng-Hui Tu, Chi-Ching Liu, Ting-Ying Shen, Yen-De Lee, Ping-Kun Wang
  • Publication number: 20200235001
    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer and a through hole passing through the first dielectric layer over a substrate; forming a plurality of dummy contacts in the through hole; forming a plurality of first dummy wires on the plurality of dummy contacts; filling a second dielectric layer between the plurality of first dummy wires, wherein the second dielectric layer has a first air gap; removing the dummy contacts and the first dummy wires to expose the through hole, thereby forming a first wiring trench over the through hole; and forming a contact and a first wire in the through hole and the first wiring trench.
    Type: Application
    Filed: December 5, 2019
    Publication date: July 23, 2020
    Inventors: Cheng-Hui TU, Chi-Ching LIU, Ting-Ying SHEN, Yen-De LEE, Ping-Kun WANG