Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A circuit protection device includes a first temperature sensitive resistor, a second temperature sensitive resistor, an electrically insulating multilayer, a first and second electrode layer, and at least one external electrode. The first temperature sensitive resistor and the second temperature sensitive resistor are electrically connected in parallel, and have a first upper electrically conductive layer and a second lower electrically conductive layer, respectively. The electrically insulating multilayer includes an upper insulating layer, a middle insulating layer, and a lower insulating layer. The upper insulating layer is between the first upper electrically conductive layer and the first electrode layer. The middle layer is laminated between the first temperature sensitive resistor and the second temperature sensitive resistor. The lower insulating layer is between the second lower electrically conductive layer and the second electrode layer.

Abstract: An electronic device includes: at least one connection interface, to receive an external signal. A first signal switching multiplexer is connected to the connection interface. A laptop system is connected to the first signal switching multiplexer, to operate in a laptop mode. A drawing board system is connected to the first signal switching multiplexer, to operate in a drawing board mode and an independent screen mode. A switching switch generates a switching signal and transmits it to the first signal switching multiplexer, the laptop system, and the drawing board system, to select the laptop mode, the drawing board mode, or the independent screen mode.

Abstract: A chip package includes a redistribution layer, a chip, and an encapsulation member. The redistribution layer includes an insulation part, a plurality of first pads and a plurality of second pads, where the insulation part has a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. The first pads and the second pads are located at the first surface and the second surface respectively. The chip is disposed on the first surface and electrically connected to the first pads. The encapsulation member wraps the chip and the redistribution layer, and covers the first surface and the side surface, where the encapsulation member exposes the second pads, and the encapsulation member is not flush with the first surface and the side surface.

Abstract: A light-emitting diode package including a carrier structure, a patterned conductive layer, at least one chip, a dielectric layer, at least one first conductive via, a build-up circuit structure, and at least one light-emitting diode is provided. The patterned conductive layer is disposed on the carrier structure. The chip is disposed on the carrier structure. The dielectric layer is disposed on the carrier structure and encapsulates the chip and the patterned conductive layer. The first conductive via penetrates the dielectric layer and is electrically connected to the patterned conductive layer. The build-up circuit structure is disposed on the dielectric layer and electrically connected to the first conductive via. The light-emitting diode is disposed on the build-up circuit structure.

Abstract: A method of preparing a package structure is provided, which includes providing a carrier plate including a supporting layer, a first release layer, and a first metal layer; forming a first dielectric layer over the first metal layer, the first dielectric layer having a plurality of holes, each of the holes having an end portion substantially coplanar with each other at a same plane; forming a plurality of conductive protrusions filling the holes, each of the conductive protrusions having a first end and a second end opposite thereto; forming a circuit layer structure including at least one circuit layer and at least one second dielectric layer, the circuit layer being connected to the second end, the second dielectric layer being disposed over the circuit layer; removing the carrier plate; and removing a portion of the first dielectric layer to expose the conductive protrusions. A package structure is also provided.

Abstract: A method of preparing a package structure is provided, which includes providing a carrier plate including a supporting layer, a first release layer, and a first metal layer; forming a first dielectric layer over the first metal layer, the first dielectric layer having a plurality of holes, each of the holes having an end portion substantially coplanar with each other at a same plane; forming a plurality of conductive protrusions filling the holes, each of the conductive protrusions having a first end and a second end opposite thereto; forming a circuit layer structure including at least one circuit layer and at least one second dielectric layer, the circuit layer being connected to the second end, the second dielectric layer being disposed over the circuit layer; removing the carrier plate; and removing a portion of the first dielectric layer to expose the conductive protrusions. A package structure is also provided.

Abstract: This invention discloses a successive approximation register analog-to-digital converter (SAR ADC) and a control circuit thereof. The SAR ADC includes a comparator, a switched-capacitor digital-to-analog converter (DAC), and a control circuit. The switched-capacitor DAC includes a capacitor and a driving circuit that is electrically connected to the capacitor. The driving circuit comprises a P-type MOSFET and an N-type MOSFET, and the gates of the two MOSFETs are not electrically connected. The P-type MOSFET is controlled by a first control signal, and the N-type MOSFET is controlled by a second control signal. The control circuit controls the voltage at one end of the capacitor to switch from a high voltage level to a low voltage level by controlling the rising edge of the first control signal to lead the rising edge of the second control signal.

Abstract: A carrier structure including a glass substrate, a buffer layer, and an inner circuit layer is provided. The glass substrate has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating through the glass substrate. The buffer layer is disposed on the first surface and the second surface of the glass substrate. The inner circuit layer is disposed on the buffer layer and in the through hole of the glass substrate. The inner circuit layer exposes a part of the buffer layer.

Abstract: A light-emitting diode package including a carrier structure, a patterned conductive layer, at least one chip, a dielectric layer, at least one first conductive via, a build-up circuit structure, and at least one light-emitting diode is provided. The patterned conductive layer is disposed on the carrier structure. The chip is disposed on the carrier structure. The dielectric layer is disposed on the carrier structure and encapsulates the chip and the patterned conductive layer. The first conductive via penetrates the dielectric layer and is electrically connected to the patterned conductive layer. The build-up circuit structure is disposed on the dielectric layer and electrically connected to the first conductive via. The light-emitting diode is disposed on the build-up circuit structure.

Abstract: A carrier structure including a glass substrate, a buffer layer, and an inner circuit layer is provided. The glass substrate has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating through the glass substrate. The buffer layer is disposed on the first surface and the second surface of the glass substrate. The inner circuit layer is disposed on the buffer layer and in the through hole of the glass substrate. The inner circuit layer exposes a part of the buffer layer.

Abstract: A Successive Approximation Register (SAR) Analog-to-digital converter (ADC) includes: a digital-to-analog converter (DAC), a comparison circuit and a logic circuit. The DAC is configured to generate a transformed voltage according to a digital signal and a reference voltage, and the digital signal is generated by a digital signal generating circuit. The comparison circuit is coupled to the DAC and configured to compare the transformed voltage and an input voltage to generate a comparison result, and further configured to receive a control signal. The logic circuit is coupled to the comparison circuit, and configured to perform a logic transform operation upon the comparison result to generate an output signal to the digital signal generating circuit and the comparison circuit. The control signal controls the comparison circuit to enable or disable the SAR ADC.

Abstract: This invention discloses a successive approximation register analog-to-digital converter (SAR ADC) and a control circuit thereof. The SAR ADC includes a comparator, a switched-capacitor digital-to-analog converter (DAC), and a control circuit. The switched-capacitor DAC includes a capacitor and a driving circuit that is electrically connected to the capacitor. The driving circuit comprises a P-type MOSFET and an N-type MOSFET, and the gates of the two MOSFETs are not electrically connected. The P-type MOSFET is controlled by a first control signal, and the N-type MOSFET is controlled by a second control signal. The control circuit controls the voltage at one end of the capacitor to switch from a high voltage level to a low voltage level by controlling the rising edge of the first control signal to lead the rising edge of the second control signal.

Abstract: A package structure includes a substrate, a metal-insulator-metal capacitor, a circuit redistribution structure, and a chip. The metal-insulator-metal capacitor is disposed over the substrate and includes a first electrode, a second electrode, and an insulating layer. The circuit redistribution structure is disposed over the metal-insulator-metal capacitor and includes a first circuit redistribution layer and a second circuit redistribution layer. The first circuit redistribution layer includes a first wire electrically connected to the first electrode and a second wire electrically connected to the second electrode. The second circuit redistribution layer is disposed on the first circuit redistribution layer and includes a third wire electrically connected to the first wire and a fourth wire electrically connected to the second wire. The chip is disposed over the circuit redistribution structure and electrically connected to the third wire and the fourth wire.

Abstract: A Successive Approximation Register (SAR) Analog-to-digital converter (ADC) includes: a digital-to-analog converter (DAC), a comparison circuit and a logic circuit. The DAC is configured to generate a transformed voltage according to a digital signal and a reference voltage, and the digital signal is generated by a digital signal generating circuit. The comparison circuit is coupled to the DAC and configured to compare the transformed voltage and an input voltage to generate a comparison result, and further configured to receive a control signal. The logic circuit is coupled to the comparison circuit, and configured to perform a logic transform operation upon the comparison result to generate an output signal to the digital signal generating circuit and the comparison circuit. The control signal controls the comparison circuit to enable or disable the SAR ADC.

Abstract: The present invention provides a metal-insulator-metal capacitor, which includes: a substrate, a copper-based bottom electrode overlying the substrate, wherein the copper based bottom electrode is doped with rhenium nitride or ruthenium nitride, a top electrode overlying the copper based bottom electrode, and a capacitor insulator between and adjoining the copper based bottom electrode and the top electrode.