Patents by Inventor Cheng-Hung Chien
Cheng-Hung Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12228863Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.Type: GrantFiled: April 12, 2023Date of Patent: February 18, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng Hung Tsai, Sheng-Kang Yu, Heng-Hsin Liu, Li-Jui Chen, Shang-Chieh Chien
-
Patent number: 12223252Abstract: The present disclosure describes structures and methods for a via structure for three-dimensional integrated circuit (IC) packaging. The via structure includes a middle portion that extends through a planar structure and a first end and a second end each connected to the middle portion and on a different side of the planar structure. One or more of the first end and the second end includes one or more of a plurality of vias and a pseudo metal layer.Type: GrantFiled: February 17, 2023Date of Patent: February 11, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fong-yuan Chang, Chin-Chou Liu, Chin-Her Chien, Cheng-Hung Yeh, Po-Hsiang Huang, Sen-Bor Jan, Yi-Kan Cheng, Hsiu-Chuan Shu
-
Patent number: 7757724Abstract: An improved medication dispensing device includes an apyrexia receptacle, a transport pipeline, a perfusion device, a filter, and a dispensing needle, which operates in an environment in compliance with Class 100 laminar air ventilation. The perfusion device erected at the middle of the transport pipeline which has two ends linking to the apyrexia receptacle and the filter, respectively. In operation, the perfusion device pumps the prepared medication solution from the apyrexia receptacle to get through the filter to remove particles and bacterium, and a thin tubular dispensing needle which punctures the rubber plug of an aseptic bottle. An axial groove rendered in middle section of the dispensing needle forms a pressurized seal part with the rubber plug resiliently wrapped around at the middle of the dispensing needle to discharge redundant air pressure accumulating in the aseptic bottle while keeps outside air from entering.Type: GrantFiled: July 20, 2006Date of Patent: July 20, 2010Assignee: Institute of Nuclear Energy ResearchInventors: Ming-Hsin Li, Wuu-Jyh Lin, Cheng-Hung Chien, Jun-Chieh Tsai, Wun-Shen Lan
-
Publication number: 20080097370Abstract: An improved medication dispensing device includes an apyrexia receptacle, a transport pipeline, a perfusion device, a filter, and a dispensing needle, which operates in an environment in compliance with Class 100 laminar air ventilation. The perfusion device erected at the middle of the transport pipeline which has two ends linking to the apyrexia receptacle and the filter, respectively. In operation, the perfusion device pumps the prepared medication solution from the apyrexia receptacle to get through the filter to remove particles and bacterium, and a thin tubular dispensing needle which punctures the rubber plug of an aseptic bottle. An axial groove rendered in middle section of the dispensing needle forms a pressurized seal part with the rubber plug resiliently wrapped around at the middle of the dispensing needle to discharge redundant air pressure accumulating in the aseptic bottle while keeps outside air from entering.Type: ApplicationFiled: July 20, 2006Publication date: April 24, 2008Inventors: Ming-Hsin Li, Wuu-Jyh Lin, Cheng-Hung Chien, Jun-Chieh Tsai, Wun-Shen Lan
-
Patent number: 6353240Abstract: A CMOS sensor. The CMOS sensor comprises a substrate, a gate electrode formed on the substrate, a source/drain region formed in the substrate on one side of the gate electrode, and a sensor region formed in the substrate on another side of the gate electrode. The impurity in the source/drain region is arsenic. The source/drain further comprises a lightly doped drain region. The sensor region comprises a first doped region and a second doped region which together have a dentoid profile. The impurity in the first doped region and the second doped region is phosphorus.Type: GrantFiled: June 2, 1999Date of Patent: March 5, 2002Assignee: United Microelectronics Corp.Inventors: Cheng-Hung Chien, Chih-Hua Lee
-
Publication number: 20010045584Abstract: A CMOS sensor. The CMOS sensor comprises a substrate, a gate electrode formed on the substrate, a source/drain region formed in the substrate on one side of the gate electrode, and a sensor region formed in the substrate on another side of the gate electrode. The impurity in the source/drain region is arsenic. The source/drain further comprises a lightly doped drain region. The sensor region comprises a first doped region and a second doped region which together have a dentoid profile. The impurity in the first doped region and the second doped region is phosphorus.Type: ApplicationFiled: June 2, 1999Publication date: November 29, 2001Inventors: CHENG-HUNG CHIEN, CHIH-HUA LEE
-
Patent number: 6194260Abstract: A method of forming a CMOS sensor. Shallow first doped regions are formed in a provided substrate beside a gate electrode which is on the substrate. One of the shallow first doped region is defined as a source/drain area. Another of the shallow first doped region is defined as a sensor area. A spacer is formed on the sidewall of the gate electrode. A second doped region is formed within the predetermined sensor area by implanting. In the predetermined sensor area, the second doped region is deeper than the first doped region. The sensor region is composed of the first doped region and the second doped region.Type: GrantFiled: June 2, 1999Date of Patent: February 27, 2001Assignee: United Microelectronics Corp.Inventors: Cheng-Hung Chien, Chih-Hua Lee
-
Patent number: 6171882Abstract: A structure of a photo diode and a method of manufacturing a photo diode comprise the steps of providing a substrate having an isolation region and a device region. A doped region is formed adjacent to the isolation region in the substrate by performing an ion implantation step and an annealing step. Next, a protective layer utilized to prevent the plasma damage is formed on the substrate and the isolation region, and an inter-layer dielectric layer is formed on the protective layer. Thereafter, a contact hole is formed to expose a portion of the doped region by patterning the inter-layer dielectric layer and the protective layer, and a contact plug is formed by filling the contact hole with a conductive material.Type: GrantFiled: December 11, 1998Date of Patent: January 9, 2001Assignee: United Microelectronics Corp.Inventors: Cheng-Hung Chien, Jen-Yao Hsu, Jui-Hsiang Pan