Abstract: An electronic device is provided and includes a first conductive structure, a second conductive structure, a third conductive structure, a first insulating layer, a second insulating layer, a conductive element, an electronic component, and a plurality of passive components. The first insulating layer is disposed between the first conductive structure and the second conductive structure, and the second insulating layer is disposed between the second conductive structure and the third conductive structure. The second conductive structure is electrically connected to the first conductive structure at a first position, and the third conductive structure is electrically connected to the second conductive structure at a second position, wherein a center point of the first position and a center point of the second position is misaligned along a normal direction of a surface of the first insulating layer.

Abstract: A variable resistor and a digital-to-analog converter are provided. The variable resistor includes a main resistor, a plurality of switches, and a plurality of redundancy resistors. The switches are respectively constituted by a plurality of non-volatile memory cells. The switches are coupled to the main resistor. The redundancy resistors are respectively coupled to the main resistor through the switches.

Abstract: A display apparatus is provided. The display apparatus includes a display module and multiple light-emitting driving circuits. Each of the light-emitting driving circuits includes a timing control circuit and a driving circuit. The timing control circuit receives multiple clock signals and a previous light-emitting timing signal to provide a light-emitting timing signal and an internal voltage. The driving circuit receives a first phase signal among multiple phase signals and the internal voltage to provide a light-emitting driving signal to the display module based on the first phase signal and the internal voltage. The phase signals all present disabled levels during a vertical blank period.

Abstract: Optical devices and methods of manufacture are presented in which a mirror structure is utilized to transmit and receive optical signals to and from an optical device. In embodiments the mirror structure receives optical signals from outside of an optical device and directs the optical signals through at least one mirror to an optical component of the optical device.

Abstract: A semiconductor structure can include a first substrate having a frontside and a backside opposite the frontside. The semiconductor structure can include devices on the frontside. The semiconductor structure can include first interconnect structures on the frontside and coupled to the devices. The semiconductor structure can include a heat distribution layer on the frontside and electrically isolated from the first interconnect structures, where the heat distribution layer includes a thermally conductive material. The semiconductor structure can include a second substrate coupled to the first substrate on the frontside. The semiconductor structure can include second interconnect structures on the backside and coupled to the devices.

Abstract: In one example in accordance with the present disclosure, an example computing device is disclosed. The example computing device includes a housing. The example computing device also includes a rotatable antenna disposed within the housing. The rotatable antenna is to rotate such that a direction of radiation is maintained in a single direction as the housing is to rotate.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a first semiconductor layer on an inner surface of a trench of a substrate; forming a second semiconductor layer on the first semiconductor layer on the inner surface of the trench of the substrate; forming another first semiconductor layer on the second semiconductor layer on the inner surface of the trench of the substrate; forming another second semiconductor layer on the another first semiconductor layer on the inner surface of the trench of the substrate, in which the second semiconductor layer is sandwiched between the first semiconductor layer and the another first semiconductor layer, and the another first semiconductor layer is sandwiched between the second semiconductor layer and the another second semiconductor layer; and forming a third semiconductor layer on the another second semiconductor layer.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a supportive layer, a cover layer and a pillar bump. The supportive layer is disposed on the piezoelectric substrate and around a transducer, the cover layer covers the supportive layer, and the pillar bump is located in a lower via hole of the supportive layer and an upper via hole of the cover layer. The upper via hole has a lateral opening located on a lateral surface of the cover layer, and the pillar bump in the cover layer protrudes from the lateral surface of the cover layer via the lateral opening.

Abstract: An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

Abstract: The present invention discloses a hacking detection method, including: deploying a plurality of trap IP addresses in a trap IP address list; collecting access logs from a plurality of network devices to create a connection record list, wherein the connection record list includes a plurality of connection records; and comparing the trap IP address list and the connection record list to obtain a suspicious source list. The suspicious source list includes a plurality of suspicious source IP addresses. The suspicious source IP addresses match a portion of the trap IP addresses in the trap IP address list.

Abstract: An electronic component includes a first electronic unit including a plurality of pads, a first conductive layer, a second conductive layer, a first insulating layer having a first thickness, a second insulating layer having a second thickness, a second electronic unit, and a solder ball. The first conductive layer is disposed between the first electronic unit and the second conductive layer, and electrically connected to at least one of the pads through a conductive via. The first insulating layer is disposed between the first conductive layer and the second conductive layer. The second conductive layer is disposed between the first insulating layer and the second insulating layer. The first thickness is different from the second thickness. The second conductive layer is disposed between the first conductive layer and the second electronic unit. The second conductive layer is electrically connected to the second electronic unit through the solder ball.

Abstract: A wrist-wearable electronic device comprising a house, a display, and a lens module. The lens module is coupled to a sidewall of the housing and can include a first light emitting element, a lens, and a first Frensel structure. The lens includes a body, a lower surface, and an upper surface. The first Frensel structure is disposed on the lower surface of the lens and is configured to disperse light generated by the first light emitting element into the body of the lens.

Abstract: The present disclosure provides an electronic device including a redistribution layer, a plurality of passive components, and an electronic component. The redistribution layer includes a first insulating layer, a second insulating layer, and a plurality of traces electrically connected to each other through a first opening of the first insulating layer and a second opening of the second insulating layer, wherein the first insulating layer has a first side away from the second insulating layer, and the second insulating layer has a second side away from the first insulating layer. The passive components are disposed on the first side. The electronic component is disposed on the second side. The plurality of passive components are electrically connected to the electronic component through the plurality of traces.

Abstract: A pixel element includes an emissive pixel element; and a driving circuit, coupled to the emissive pixel element, comprising: a memory circuit; a current source circuit; and a modulation circuit, coupled to the memory circuit, the current source circuit and the emissive pixel element, configured to control the current source circuit to inject a modulation current into the emissive pixel element according to modulation signals received from the memory circuit.

Abstract: A signal radiation device and an antenna structure are provided. The signal radiation device includes a first signal radiator, a second signal radiator, and a reflective signal radiator. The first signal radiator is configured to perform a transceiving operation on a first signal along a first direction. The second signal radiator is disposed by overlapping with the first signal radiator, and is configured to perform the transceiving operation on at least one second signal along a second direction and/or a third direction. The first direction, the second direction, and the third direction are different. The reflective signal radiator is disposed between the first signal radiator and the second signal radiator, and is configured to perform the transceiving operation on a third signal omnidirectionally. A frequency band of the third signal is lower than a frequency band of the first signal and a frequency band of the second signal.