Patents by Inventor Cheng-Jia DAI

Cheng-Jia DAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor device
    Patent number: 11316039
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: April 26, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Hsin Wu, Li-Cheng Chang, Cheng-Jia Dai, Shun-Cheng Yang
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20200357908
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.
    Type: Application
    Filed: July 23, 2020
    Publication date: November 12, 2020
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chao-Hsin WU, Li-Cheng CHANG, Cheng-Jia DAI, Shun-Cheng YANG
  • Semiconductor device and manufacturing method thereof
    Patent number: 10727328
    Abstract: A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: July 28, 2020
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chao-Hsin Wu, Li-Cheng Chang, Cheng-Jia Dai, Shun-Cheng Yang
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20190165153
    Abstract: A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.
    Type: Application
    Filed: April 12, 2018
    Publication date: May 30, 2019
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chao-Hsin WU, Li-Cheng CHANG, Cheng-Jia DAI, Shun-Cheng YANG