Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: A light-transmitting antenna includes a substrate, a first and a second conductive pattern. The first and the second conductive pattern is disposed on a first and a second surface of the substrate respectively. The first conductive pattern includes a first feeder unit, a first and a second radiation unit, a first and a second coupling unit and a first parasitic unit. The first feeder unit is connected to the second radiation unit. The first and the second radiation unit are located between the first and the second coupling unit. One side and the other side of the first parasitic unit is connected to the second coupling unit and adjacent to the first coupling unit respectively. The second conductive pattern includes a second feeder unit, a third coupling unit, a second parasitic unit, and a fourth coupling unit.

Abstract: A light-transmitting antenna includes a substrate, a first conductive pattern, and a second conductive pattern. The first conductive pattern has a first feeder unit, a first radiation unit, a second radiation unit, and a first connection unit. The first feeder unit and the first connection unit are connected to two sides of the first radiation unit. The first connection unit connects the first radiation unit and the second radiation unit. The second conductive pattern has a second feeder unit, a third radiation unit, a fourth radiation unit, and a second connection unit. The second feeder unit and the second connection unit are connected to two sides of the third radiation unit. The second connection unit connects the third radiation unit and the fourth radiation unit. An orthogonal projection of the second feeder unit on a first surface of the substrate at least partially overlaps the first feeder unit.

Abstract: An active photosensing pixel is disclosed, in which a two-terminal photosensing transistor has a first terminal coupled to a first node, a second terminal coupled to a first selection line and a control terminal connected to the second terminal. A driving transistor has a first terminal coupled to a first reference voltage, a second terminal coupled to an output line and a control terminal connected to the first node. A reset transistor has a first terminal connected to the first node, a second terminal coupled to a second reference voltage and a control terminal coupled to a second selection line.

Abstract: An active photosensing pixel is disclosed, in which a two-terminal photosensing transistor has a first terminal coupled to a first node, a second terminal coupled to a first selection line and a control terminal connected to the second terminal. A driving transistor has a first terminal coupled to a first reference voltage, a second terminal coupled to an output line and a control terminal connected to the first node. A reset transistor has a first terminal connected to the first node, a second terminal coupled to a second reference voltage and a control terminal coupled to a second selection line.

Abstract: This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability.

Abstract: A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.

Abstract: This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability.

Abstract: This invention provides a method for forming a microcrystalline silicon film, which employs a three-stage deposition process to form a microcrystalline film. A microcrystalline silicon seed layer is formed on a substrate. Gaseous ions are used to bombard a surface of the microcrystalline silicon seed layer. Microcrystalline silicon is formed on the microcrystalline silicon seed layer after the bombardment to a predetermined thickness.

Abstract: A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.

Abstract: A thermal-recycling system is adapted for use with a motor vehicle that has a heat generator generating heat when the motor vehicle is running. The terminal-recycling system includes a thermoelectric cooling module adapted to be in thermal communication with the heat generator for transforming the heat generated by the heat generator into electricity, and a power control unit connected electrically to the thermoelectric cooling module and a rechargeable battery and receiving the electricity from the thermoelectric cooling module so as to enable charging of the rechargeable battery using the electricity from the thermoelectric cooling module.

Abstract: A computer system with multiple Basic Input/Output System (BIOS) memory blocks has an internal memory block and an external memory block for the use of single or dual BIOS. When the external memory block is damaged or incorrect, the computer system automatically copies the content of the internal memory block to the external memory block. The booting information stored in the internal memory block is not alterable by a user so that the internal memory block booting information will continuingly serve the purpose of duplicating itself to the damaged external memory block for providing an unlimited number of salvages to the external memory block serving as the primary source for computer booting.