Abstract: A password entering method executed by at least one processor of an electronic device is provided. The electronic device includes a touch device, a storage device and a vibration device. The method includes detecting at least one stable touch on the touch device. For each of the detected stable touch, the number of vibrations produced by the vibration device according to a preset vibration frequency is counted. And the electronic device is controlled to perform a preset function when the at least one number of vibrations matches with a preset password code stored in the storage device.

Abstract: A password entering method executed by at least one processor of an electronic device is provided. The electronic device includes a touch device, a storage device and a vibration device. The method includes detecting at least one stable touch on the touch device. For each of the detected stable touch, the number of vibrations produced by the vibration device according to a preset vibration frequency is counted. And the electronic device is controlled to perform a preset function when the at least one number of vibrations matches with a preset password code stored in the storage device.

Abstract: In a method for transferring battery power of a mobile phone, the mobile phone includes a discharge circuit, a charge circuit, a switch circuit and a universal serial bus (USB) interface. The switch circuit includes an exclusive-OR (XOR) chip and a switch chip. The USB interface connects to the discharge circuit when an input terminal and an enabling terminal of the switch chip are set at high level. The discharge circuit controls a battery of the mobile phone to be discharged for charging a mobile device via a USB cable and the USB interface. The USB interface connects to the charge circuit when the input terminal and the enabling terminal of the switch chip are set at low level. The charge circuit controls the battery to be charged using the mobile device via the USB cable and the USB interface.

Abstract: In a method for transferring battery power of a mobile phone, the mobile phone includes a discharge circuit, a charge circuit, a switch circuit and a universal serial bus (USB) interface. The switch circuit includes an exclusive-OR (XOR) chip and a switch chip. The USB interface connects to the discharge circuit when an input terminal and an enabling terminal of the switch chip are set at high level. The discharge circuit controls a battery of the mobile phone to be discharged for charging a mobile device via a USB cable and the USB interface. The USB interface connects to the charge circuit when the input terminal and the enabling terminal of the switch chip are set at low level. The charge circuit controls the battery to be charged using the mobile device via the USB cable and the USB interface.

Abstract: A method is provided for forming separated spacer structures in a mixed-mode integrated circuit, which can be used to form spacer structures with different widths for the various kinds of devices in the mixed-mode integrated circuit. The method is for use on a semiconductor substrate which is formed with at least a first gate for a first kind of device of the mixed-mode integrated circuit and a second gate for a second kind of device of the integrated circuit, with the second gate being larger in width than the first gate such that the first gate is formed with a first spacer structure on the sidewalls thereof to a first desired width while the second gate is formed with a second spacer structure on the sidewalls thereof to a second desired width larger than the first desired width.

Abstract: A method of fabricating shallow trench isolation. A silicon oxide layer is formed on a substrate. The silicon oxide layer is patterned and a portion of the substrate is removed to form a trench within the substrate. A liner oxide layer is formed on the sidewall of the trench. An insulating layer is formed on the substrate and filled in the trench. A portion of the insulating layer is removed by CMP to expose the silicon oxide layer. The silicon oxide layer is removed and the STI structure is completed.