Abstract: An electronic device includes a display unit, a voltage generation unit, a grayscale adjustment unit, and an overdriving unit. The display unit has a relationship curve between the transmittance and the driving voltage. The relationship curve has a predetermined voltage value corresponding to the maximum transmittance. The voltage generation unit generates a first voltage according to a first grayscale, and generates a second voltage according to a second grayscale. The grayscale adjustment unit receives a first display grayscale value, and outputs the second grayscale value when the first display grayscale value is equal to the first grayscale. The overdriving unit overdrives the second voltage corresponding to the second grayscale to obtain a first target driving voltage, and it provides the first target driving voltage to the display unit.

Abstract: There is provided a smoke detector including a first light source, a second light source surface, a light sensor and a processor. The light sensor receives reflected light when the first light source and the second light source emit light, and generates a first detection signal corresponding to light emission of the first light source and a second detection signal corresponding to light emission of the second light source. The processor distinguishes smoke and floating particles according to a similarity between the first detection signal and the second detection signal.

Abstract: Implementations of the disclosure provide a method of fabricating an integrated circuit (IC). The method includes receiving an IC design layout; performing optical proximity correction (OPC) process to the IC design layout to produce a corrected IC design layout; and verifying the corrected IC design layout using a machine learning algorithm. The post OPC verification includes using the machine learning algorithm to identify one or more features of the corrected IC design layout; comparing the one or more identified features to a database comprising a plurality of features; and verifying the corrected IC design layout based on labels in the database associated with the plurality of features.

Abstract: Optical proximity correction (OPC) based computational lithography techniques are disclosed herein for enhancing lithography printability. An exemplary mask optimization method includes receiving an integrated circuit (IC) design layout having an IC pattern; generating target points for a contour corresponding with the IC pattern based on a target placement model, wherein the target placement model is selected based on a classification of the IC pattern; and performing an OPC on the IC pattern using the target points, thereby generating a modified IC design layout. The method can further include fabricating a mask based on the modified IC design layout. The OPC can select an OPC model based on the classification of the IC pattern. The OPC model can weight the target placement model.

Abstract: The present disclosure relates to a method of data preparation. The method, in some embodiments, performs a first data preparation process using a data preparation element. The first data preparation process modifies a plurality of shapes of an integrated chip (IC) design that comprises a graphical representation of a layout used to fabricate an integrated chip. A plurality of additional shapes are added to the IC design using an additional shape insertion element. The plurality of additional shapes are separated from the plurality of shapes by one or more non-zero distances. A second data preparation process is performed using the data preparation element, after performing the first data preparation process. The second data preparation process modifies the plurality of additional shapes.

Abstract: Implementations of the disclosure provide a method of fabricating an integrated circuit (IC). The method includes receiving an IC design layout; performing optical proximity correction (OPC) process to the IC design layout to produce a corrected IC design layout; and verifying the corrected IC design layout using a machine learning algorithm. The post OPC verification includes using the machine learning algorithm to identify one or more features of the corrected IC design layout; comparing the one or more identified features to a database comprising a plurality of features; and verifying the corrected IC design layout based on labels in the database associated with the plurality of features.

Abstract: An integrated circuit (IC) manufacturing method includes receiving an IC design layout having IC regions separate from each other. Each of the IC regions includes an initial IC pattern that is substantially identical among the IC regions. The method further includes identifying a group of IC regions from the IC regions. All IC regions in the group have a substantially same location effect, which is introduced by global locations of the IC regions on the IC design layout. The method further includes performing a correction process to a first IC region in the group, modifying the initial IC pattern in the first IC region into a first corrected IC pattern. The correction process includes using a computer program to correct location effect. The method further includes replacing the initial IC pattern in a second IC region in the group with the first corrected IC pattern.

Abstract: Implementations of the disclosure provide a method of fabricating an integrated circuit (IC). The method includes receiving an IC design layout; performing optical proximity correction (OPC) process to the IC design layout to produce a corrected IC design layout; and verifying the corrected IC design layout using a machine learning algorithm. The post OPC verification includes using the machine learning algorithm to identify one or more features of the corrected IC design layout; comparing the one or more identified features to a database comprising a plurality of features; and verifying the corrected IC design layout based on labels in the database associated with the plurality of features.

Abstract: Optical proximity correction (OPC) based computational lithography techniques are disclosed herein for enhancing lithography printability. An exemplary mask optimization method includes receiving an integrated circuit (IC) design layout having an IC pattern; generating target points for a contour corresponding with the IC pattern based on a target placement model, wherein the target placement model is selected based on a classification of the IC pattern; and performing an OPC on the IC pattern using the target points, thereby generating a modified IC design layout. The method can further include fabricating a mask based on the modified IC design layout. The OPC can select an OPC model based on the classification of the IC pattern. The OPC model can weight the target placement model.

Abstract: Optical proximity correction (OPC) based computational lithography techniques are disclosed herein for enhancing lithography printability. An exemplary mask optimization method includes receiving an integrated circuit (IC) design layout having an IC pattern; generating target points for a contour corresponding with the IC pattern based on a target placement model, wherein the target placement model is selected based on a classification of the IC pattern; and performing an OPC on the IC pattern using the target points, thereby generating a modified IC design layout. The method can further include fabricating a mask based on the modified IC design layout. The OPC can select an OPC model based on the classification of the IC pattern. The OPC model can weight the target placement model.

Abstract: Examples of optical proximity correction (OPC) based computational lithography techniques are disclosed herein. An exemplary method includes receiving an IC design layout that includes an IC feature, the IC feature specifying a mask feature for selectively exposing to radiation a portion of a photoresist disposed on a substrate; determining topographical information of an underlying layer disposed on the substrate between the photoresist and the substrate; performing an OPC process on the IC feature to generate a modified IC feature; and providing a modified IC design layout including the modified IC feature for fabricating a mask based on the modified IC design layout. The OPC process may use the topographical information of the underlying layer to compensate for an amount of radiation directed towards the portion of the photoresist so as to expose the portion of the photoresist to a target dosage of radiation.

Abstract: An integrated circuit (IC) manufacturing method includes receiving an IC design layout having IC regions separate from each other. Each of the IC regions includes an initial IC pattern that is substantially identical among the IC regions. The method further includes identifying a group of IC regions from the IC regions. All IC regions in the group have a substantially same location effect, which is introduced by global locations of the IC regions on the IC design layout. The method further includes performing a correction process to a first IC region in the group, modifying the initial IC pattern in the first IC region into a first corrected IC pattern. The correction process includes using a computer program to correct location effect. The method further includes replacing the initial IC pattern in a second IC region in the group with the first corrected IC pattern.

Abstract: Provided is an integrated circuit (IC) manufacturing method. The method includes receiving an IC design layout, wherein the IC design layout includes multiple IC regions and each of the IC regions includes an initial IC pattern. The method further includes performing a correction process to a first IC region, thereby modifying the initial IC pattern in the first IC region to result in a first corrected IC pattern in the first IC region, wherein the correction process includes location effect correction. The method further includes replacing the initial IC pattern in a second IC region with the first corrected IC pattern.

Abstract: Implementations of the disclosure provide a method of fabricating an integrated circuit (IC). The method includes receiving an IC design layout; performing optical proximity correction (OPC) process to the IC design layout to produce a corrected IC design layout; and verifying the corrected IC design layout using a machine learning algorithm. The post OPC verification includes using the machine learning algorithm to identify one or more features of the corrected IC design layout; comparing the one or more identified features to a database comprising a plurality of features; and verifying the corrected IC design layout based on labels in the database associated with the plurality of features.

Abstract: Examples of optical proximity correction (OPC) based computational lithography techniques are disclosed herein. An exemplary method includes receiving an IC design layout that includes an IC feature, the IC feature specifying a mask feature for selectively exposing to radiation a portion of a photoresist disposed on a substrate; determining topographical information of an underlying layer disposed on the substrate between the photoresist and the substrate; performing an OPC process on the IC feature to generate a modified IC feature; and providing a modified IC design layout including the modified IC feature for fabricating a mask based on the modified IC design layout. The OPC process may use the topographical information of the underlying layer to compensate for an amount of radiation directed towards the portion of the photoresist so as to expose the portion of the photoresist to a target dosage of radiation.

Abstract: The present disclosure relates to a method of data preparation. The method, in some embodiments, performs a first data preparation process using a data preparation element. The first data preparation process modifies a plurality of shapes of an integrated chip (IC) design that comprises a graphical representation of a layout used to fabricate an integrated chip. A plurality of additional shapes are added to the IC design using an additional shape insertion element. The plurality of additional shapes are separated from the plurality of shapes by one or more non-zero distances. A second data preparation process is performed using the data preparation element, after performing the first data preparation process. The second data preparation process modifies the plurality of additional shapes.

Abstract: The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by performing an initial data preparation process on an IC design including a graphical representation of a layout used to fabricate an integrated chip. The initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design. One or more low-pattern-density areas of the modified IC design are identified using a local density checking element. One or more dummy shapes are added within the one or more low-pattern-density areas using a dummy shape insertion element. The one or more dummy shapes are separated from the modified shapes by a non-zero space.

Abstract: Optical proximity correction (OPC) based computational lithography techniques are disclosed herein for enhancing lithography printability. An exemplary mask optimization method includes receiving an integrated circuit (IC) design layout having an IC pattern; generating target points for a contour corresponding with the IC pattern based on a target placement model, wherein the target placement model is selected based on a classification of the IC pattern; and performing an OPC on the IC pattern using the target points, thereby generating a modified IC design layout. The method can further include fabricating a mask based on the modified IC design layout. The OPC can select an OPC model based on the classification of the IC pattern. The OPC model can weight the target placement model.

Abstract: The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by performing an initial data preparation process on an IC design including a graphical representation of a layout used to fabricate an integrated chip. The initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design. One or more low-pattern-density areas of the modified IC design are identified using a local density checking element. One or more dummy shapes are added within the one or more low-pattern-density areas using a dummy shape insertion element. The one or more dummy shapes are separated from the modified shapes by a non-zero space.

Abstract: A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.