Abstract: A method includes, in at least one aspect, receiving a command for a group of data units to be transmitted to a host in a first sequence; for each data unit of the group of data units, receiving an identifier of the data unit and a signal indicating that the data unit has been retrieved and processed for errors, wherein the identifiers and the signals are received in accordance with the group of data units being retrieved from one or more memory devices in a second sequence that is different from the first sequence; tracking the group of data units retrieved in the second sequence; determining, by processing circuitry, that the group of data units has been retrieved and processed for errors; and initiating transmission of the group of data units to the host in accordance with the first sequence.

Abstract: A method includes, in at least one aspect, receiving a command for a group of data units to be transmitted to a host in a first sequence; for each data unit of the group of data units, receiving an identifier of the data unit and a signal indicating that the data unit has been retrieved and processed for errors, wherein the identifiers and the signals are received in accordance with the group of data units being retrieved from one or more memory devices in a second sequence that is different from the first sequence; tracking the group of data units retrieved in the second sequence; determining, by processing circuitry, that the group of data units has been retrieved and processed for errors; and directing transmission of the group of data units to the host in accordance with the first sequence.

Abstract: The present disclosure includes systems and techniques relating to solid state drive controllers. In some implementations, a device includes a buffer that holds a block of data corresponding to a command from a host. The command identifies the block of data and a logical sequence in which the identified block of data is to be transmitted. In response to the command, a data retriever included in the device retrieves the portions of the block of data from non-volatile memory units in a retrieval sequence that is different from the logical sequence. When the device receives multiple commands identifying multiple blocks of data, the device services the commands in parallel by retrieving portions of blocks of data identified by both commands.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer.

Abstract: The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.

Abstract: The present disclosure includes systems and techniques relating to solid state drive controllers. In some implementations, a device includes a buffer that holds a block of data corresponding to a command from a host. The command identifies the block of data and a logical sequence in which the identified block of data is to be transmitted. In response to the command, a data retriever included in the device retrieves the portions of the block of data from non-volatile memory units in a retrieval sequence that is different from the logical sequence. When the device receives multiple commands identifying multiple blocks of data, the device services the commands in parallel by retrieving portions of blocks of data identified by both commands.

Abstract: A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer.

Abstract: The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: The present invention relates to a diary type language learning system that is capable of creating a vivid daily language-learning environment by using the network and the computer. The authors can provide their daily diary for the readers to read via the network, thus creating a day-to-day language situation. The diary type language learning system comprises: a learning platform, which is a host computer with broadband networking capability and is built up in a network, so as to create a website and a mailer server; a plurality of authors serves to supply diary to the learning platform through the network; a plurality of readers selectively read the diary on the platform via the network.