Abstract: A semiconductor substrate for having enhanced adhesion to semiconductor device and its manufacturing method are provided. The wire circuit layout on the surface of the semiconductor substrate is of a specialized design and surface treatment for enhanced adhesion between the packaged adhered material and the substrate surface (the bonding pad in particular). In the manufacturing method of the semiconductor substrate, the processing by the passivation treatment or the roughening treatment of the whole or a part of the bonding pad on the substrate, such as the brown-oxide treatment or the black-oxide treatment, etc, and the use of an enlarged contact area act to enhance adhesion to the semiconductor device during the packaging of the semiconductor device.

Abstract: A semiconductor substrate for having enhanced adhesion to semiconductor device and its manufacturing method are provided. The wire circuit layout on the surface of the semiconductor substrate is of a specialized design and surface treatment for enhanced adhesion between the packaged adhered material and the substrate surface (the bonding pad in particular). In the manufacturing method of the semiconductor substrate, the processing by the passivation treatment or the roughening treatment of the whole or a part of the bonding pad on the substrate, such as the brown-oxide treatment or the black-oxide treatment, etc, and the use of an enlarged contact area act to enhance adhesion to the semiconductor device during the packaging of the semiconductor device.

Abstract: An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer uncovered by the insulating layer formed on the bump side from the electroplated metal layer on the ball side to form the protective layer (the electroplated gold layer) on the portion of the circuit layer. In such a way, the electroplated gold layer cannot be formed under the insulating layer formed on the bump side (attached with the chip) because the electroplated gold layer is formed after the insulating layer has been formed, and thereby the fall-off of the insulating layer from the electroplated gold layer will not happen. Therefore, the reliability of the products is enhanced.

Abstract: An electroplating method by transmitting electric current from a ball side is provided. In the electroplating method, the circuit layer is firstly formed on the bump side of the IC board, and the electric current is transmitted to the portion of the circuit layer uncovered by the insulating layer formed on the bump side from the electroplated metal layer on the ball side to form the protective layer (the electroplated gold layer) on the portion of the circuit layer. In such a way, the electroplated gold layer cannot be formed under the insulating layer formed on the bump side (attached with the chip) because the electroplated gold layer is formed after the insulating layer has been formed, and thereby the fall-off of the insulating layer from the electroplated gold layer will not happen. Therefore, the reliability of the products is enhanced.