Patents by Inventor Cheng-Kuo Yuan

Cheng-Kuo Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020182860
    Abstract: A method of forming self-aligned silicide layers on semiconductor devices. The method includes a metal sputtering step which sputters a metal material onto a semiconductor device in an environment with a temperature of at least 400° C., an etching step which selectively removes unreacted metal and reacted metal remainder, and a high temperature annealing step which forms a self-aligned silicide layer by rapidly raising the temperature and annealing. Using this method, an inter-mediate can be formed during the metal sputtering process. Therefore, the invention takes out one rapid thermal annealing process in the self-aligned silicide process, reducing the cycle time and cost, and increasing the yield.
    Type: Application
    Filed: May 29, 2001
    Publication date: December 5, 2002
    Inventors: Cheng-Kuo Yuan, Chi-Wei Chou, Jerry Lin