Abstract: An electrolytic cell includes a cation exchange membrane, a cathode compartment, and an anode compartment. The cathode compartment includes a gas diffusion electrode and a flow channel element, in which the flow channel element is between the cation exchange membrane and the gas diffusion electrode, and has a plurality of flow channels arranged in parallel with each other. The anode compartment includes an anode mesh, in which the cation exchange membrane is between the anode mesh and the flow channel element. A distance between the anode mesh and the gas diffusion electrode is substantially equal to the sum of a first thickness of the cation exchange membrane and a second thickness of the flow channel element. The novel electrolytic cell can combine with a chloralkali electrolytic cell to deal with gaseous CO2 and produce products, e.g., synthesis gas, for other purposes.

Abstract: A micro light-emitting diode display device includes a substrate, a first planarization layer, a first light-emitting element, and a second planarization layer. The first planarization layer is disposed on the substrate and has a first opening. The first opening has a first opening inner wall. The first light-emitting element is disposed on the substrate, in the first opening, and separated from the first opening inner wall. The second planarization layer is disposed on the substrate and between the first planarization layer and the first light-emitting element. The second planarization layer is in contact with the first light-emitting element.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: The present invention relates to a method for producing recombinant human prethrombin-2 protein and having human ?-thrombin activity by the plant-based expression systems.

Abstract: A heat sealable polyester film and a method for manufacturing the same are provided. The heat sealable polyester film is made from a recycled polyester material. The heat sealable polyester film includes a base layer and a heat sealable layer formed on at least one surface of the base layer. The heat sealable layer is formed from a first polyester composition. A main component of the first polyester composition is regenerated polyethylene terephthalate and the first polyester composition further includes at least one of 1,4-butanediol, isophthalic acid, neopentyl glycol, and polybutylene terephthalate. A heat sealing temperature of the heat sealable polyester film ranges from 120° C. to 230° C.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: An integrated motor and drive assembly is disclosed and includes a housing, a motor and a drive. The housing includes a motor-accommodation portion and a drive-accommodation portion. The drive includes a power board and a control board. The power board is made of a high thermal conductivity substrate and includes a power element and an encoder disposed on the first side, the first side faces the motor, the power board and the motor are stacked along a first direction, and the second side contacts the housing to from a heat-dissipating route. The control board is disposed adjacent to the power board. The control board and the power board are arranged along a second direction perpendicular to the first direction, and the first direction is parallel to an axial direction of the motor. A part of the power board and a part of the control board are directly contacted to form an electrical connection.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: A contact lens comprises an optical zone and a peripheral zone. The optical zone is used for vision correction. The peripheral zone surrounds the optical zone. The optical zone and the peripheral zone jointly define a geometric center and a horizontal axis passing through the geometric center. Two stabilization zones symmetrically arranged relative to the geometric center are formed in the peripheral zone. These stabilization zones gradually thicken relative to a base curved surface of the peripheral zone.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer-storage media, for memory mapping to enhance data cube performance. In some implementations, a system accesses a data set that includes data to be processed into a data cube. The system generates a memory-mapped data cube that includes a plurality of files including different segments of the data cube. Generating the memory-mapped data cube includes allocating memory-mapped buffers in non-volatile data storage and responding to subsequent memory allocation requests with addresses for the buffers such that components of the data cube are accumulated in the buffers. The memory-mapped data cube is loaded by storing the files of the data cube in disk-based storage, mapping the stored files of the data cube to virtual memory addresses, and caching portions of the data cube in random-access memory.

Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

Abstract: A radiation therapy system is disclosed. The radiation therapy system includes a gantry, a first radiation source, and a second radiation source. The gantry is configured to have a cavity extending in a direction along a rotation axis, and the cavity is configured to house a target object. The first radiation source is mounted on the gantry, and configured to emit a treatment beam to a treatment area of the target object. The second radiation source is mounted on the gantry, and configured to emit an imaging beam to an imaging area of the target object. The treatment area partially overlaps the imaging area. A rotation plane of the first radiation source and a rotation plane of the second radiation source are distributed in a direction along the rotation axis.

Abstract: Provided are a complex of an anti-IL-4R antibody or an antigen-binding fragment thereof, and a medical use thereof. Specifically, provided are a complex of an antibody that specifically binds to IL-4R or an antigen-binding fragment thereof covalently linked to a toxin, a pharmaceutical composition comprising the complex, and a use thereof in the preparation of a drug for treating IL-4R-mediated diseases or disorders, especially a use in the preparation of an anti-cancer drug.

Abstract: In one embodiment, a static random access memory (SRAM) device is provided. The SRAM device includes a memory cell, a bit line couple to the memory cell, a voltage supply line coupled to the memory cell, a control circuitry. The control circuitry is configured to charge a voltage supply line while the voltage supply line is electrically isolated from a bit line. A portion of the charge is transferred from the voltage supply line to the bit line. The voltage supply line is recharged while the voltage supply line is electrically isolated from the bit line storing the transferred portion of the charge. The memory cell is accessed using the recharge on the voltage supply line.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; lifting a lifting pin through the wafer chuck to a first position to support the wafer; holding the wafer on the lifting pin using a negative pressure source in gaseous communication with an inner gas passage of the lifting pin; introducing a gas to a region between the wafer and the wafer chuck through an outer gas passage of the lifting pin, wherein in a top view of the lifting pin, the inner gas passage has a circular profile, while the outer gas passage has a ring-shape profile; and lowering the lifting to dispose the wafer over the wafer chuck.

Abstract: The disclosure discloses a heat-sealable polyester film, including a base layer and a heat-seal layer formed on the base layer. The heat-seal layer includes a physically regenerated polyester resin, a chemically regenerated polyester resin, and a modifier. The heat-sealable temperature of the heat-sealable polyester film is between 100° C. and 230° C.

Abstract: A substrate table is provided. The substrate table includes a main body having a surface and a plurality of burls extending from the surface. The burls are configured to support a substrate on the main body. The substrate table further includes a number of vacuum channels provided in the burls to apply a vacuum to the substrate. The vacuum channels are distributed throughout the main body and arranged in a grid pattern.

Abstract: Provided is a semiconductor structure and a formation method therefor. The semiconductor structure includes: a gate structure located on a substrate. The gate structure includes at least two gate conductive layers; the at least two gate conductive layers have the same components and different characteristic parameters; and the characteristic parameter includes at least one of thickness, component content or shape.

Abstract: A matte film for hot pressing and a manufacturing method thereof are provided. The manufacturing method includes steps of forming at least one polyester composition into an unstretched polyester thick film and stretching the unstretched polyester thick film in a machine direction (MD) and a transverse direction (TD). The polyester composition includes 81% to 97.9497% by weight of a polyester resin, 0.02% to 2% by weight of an antioxidative ingredient, 0.0003% to 1% by weight of a nucleating agent, 0.01% to 2% by weight of a flow aid, 0.01% to 2% by weight of a polyester modifier, 0.01% to 2% by weight of an inorganic filler, and 2% to 10% by weight of silica particles. The polyester resin has an intrinsic viscosity between 0.60 dl/g and 0.80 dl/g.