Abstract: A power supply suppression circuit (10), a chip and a communication terminal that only achieve the enhancement of the power supply suppression capability from an AC, without generating additional circuit power consumption. The power supply suppression circuit (10) comprises a sampling unit (105), a compensation unit (106), and an amplification unit (107). The sampling unit (105) is connected to the compensation unit (106), and the compensation unit (106) is connected to the amplification unit (107). The power supply suppression circuit (10) obtains an AC signal from a preset sampling node position of a low dropout regulator, and generates an enhancement signal in phase with the AC signal on a power supply (Vdd) on the basis of the AC signal, such that the input end voltage of the power output stage of the low dropout regulator immediately follows the voltage change of the power supply (Vdd).

Abstract: A flow guiding device in an immersion-cooled chassis of a server comprises at least one deflector located above a chip on a mainboard in the chassis, each deflector comprises a first end for mounting to the mainboard above the chip and a second end inclined away from the mainboard. The first end is immersed in coolant, the second end is higher than the first end; the deflector further comprises a hollow part including multiple through holes for interrupting upward movement vapor bubbles generated by the hot chip, which reduces probability of the vapor bubbles escaping from the coolant liquid and the chassis. A liquid-cooled chassis having the flow guiding device is also disclosed.

Abstract: The present disclosure relates to a method for treating a cancer and/or cancer metastasis in a subject comprising administering to the subject irinotecan loaded in a mesoporous silica nanoparticle. The present disclosure also provides a conjugate comprising an agent loaded in a mesoporous silica nanoparticle (MSN) defining at least one pore and having at least one functional group on a sidewall of the at least one pore.

Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor is of a first type in a first layer and includes a gate extending in a first direction and a first active region extending in a second direction perpendicular to the first direction. The second transistor is of a second type arranged in a second layer over the first layer and includes the gate and a second active region extending in the second direction. The semiconductor device further includes a first conductive line in a third layer between the first and second layers. The first conductive line electrically connects a first source/drain region of the first active region to a second source/drain region of the second active region. The gate comprises an intermediate portion disposed between the first active region and the second active region, wherein the first conductive line crosses the gate at the intermediate portion.

Abstract: An interconnect structure is provided. The interconnect structure includes a transistor on a substrate, a first dielectric layer over the transistor, a first metal line through the first dielectric layer, a second dielectric layer over the first dielectric layer, and a via through the second dielectric layer and on the first metal line. A first side surface of the first dielectric layer includes a first portion in direct contact with the first metal line and a second portion in direct contact with the via, and the first portion of the first side surface of the first dielectric layer is aligned with the second portion of the first side surface of the first dielectric layer.

Abstract: An integrated circuit includes a first inverter, a first transmission gate, and a second inverter constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter and a second clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A master latch is formed with the first inverter and the first clocked inverter. A slave latch is formed with the second inverter and the second clocked inverter. The first transmission gate is coupled between the master latch and the slave latch. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.

Abstract: A controlling method for a wireless communication device is provided. The controlling method for the wireless communication device includes: attaching a first Universal Subscriber Identity Module (USIM) to a Long-Term Evolution (LTE) network; determining whether a second USIM is camped on the LTE network; detecting whether a paging collision is happened, if the second USIM is camped on the LTE network; generating a requested International Mobile Subscriber Identity (IMSI) offset for the second USIM, if the paging collision is happened, wherein the requested IMSI offset is 1 or min(T, nB)?1, T is a default paging period and nB is a number of paging occurrences within the default paging period; transmitting an attach request with the requested IMSI offset to the LTE network for the second USIM; receiving a negotiated IMSI offset from the LTE network; and attaching the second USIM to the LTE network with the negotiated IMSI offset.

Abstract: A vehicle door lock assembly includes a housing, a first locking assembly and a second locking assembly. The first locking assembly includes an inner handle, an outer handle, a first lock and a first lock tongue. The first lock tongue has a tendency to move outward of the housing, and the inner and outer handles respectively control the first lock tongue to move inward of the housing. The first lock is connected with a first blocking member. The second locking assembly includes a control member, a second lock and a second lock tongue. The second lock is connected with a second blocking member, and the second lock and the control member are co-movable. The second lock drives the second lock tongue to move outward of the housing when locked, and the second lock drives the second lock tongue to move inward of the housing when unlocked.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: Disclosed are a material analysis method based on the crystal structure database, a system, a computer-readable storage medium and an application. The material analysis method includes comparing experimental pattern information obtained from examination of a to-be-tested sample with theoretical pattern information calculated from material structure data in the crystal structure database, and obtaining crystallographic information and phase composition of the to-be-tested sample through intelligent analysis. The crystallographic information include space group, unit cell parameter, and specific coordinates of atoms in unit cell. The crystal structure database has material structure data obtained by experimental measurement and/or theoretical prediction, including chemical formula, space group, unit cell parameter and specific coordinates of atoms in unit cell.

Abstract: A vehicle door lock assembly includes a housing, a first locking assembly, a second locking assembly, a driving module and a micro switch. The first locking assembly includes an inner handle, an outer handle and a first lock tongue. The inner handle and the outer handle are disposed on the housing and respectively control the first lock tongue to move. The second locking assembly includes a second lock and a second lock tongue including a first segment and a second segment slidably connected with each other. The second lock includes a mandrel having an assembling portion. The driving module includes a motor assembled with the mandrel, and the second segment is moved when the motor drives the mandrel to rotate. The micro switch includes an inductive element, and the assembling portion has an inductive portion.

Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.

Abstract: An imaging system, optionally an intra-oral camera, includes a blue light source and a barrier filter over a camera sensor. Optionally, the imaging system can also take white light images. Optionally, the system includes positively charged nanoparticles with fluorescein. The fluorescent nanoparticles can be identified on an image of a tooth by machine vision or machine learning algorithms on a pixel level basis. Either white light or fluorescent images can be used, with machine learning or artificial intelligence algorithms, to score the lesions. However, the white light image is not useful for determining whether lesions, particularly ICDAS 0-2 lesions, are active or inactive. A fluorescent image, with the fluorescent nanoparticles, can be used to detect and score active lesions. Optionally using a white light image and a fluorescent image together allows for all lesions, active and inactive, to be located and scored, and for their activity to be determined.

Abstract: A battery pack including fire extinguishing equipment. The fire extinguishing equipment includes a first chamber, a second chamber, and an activation line. The first chamber stores a fire extinguishing chemical agent, the second chamber stores a gas-generating chemical agent, and the activation line extends into the second chamber to be in contact with the gas-generating chemical agent. The second chamber includes a pressure relief opening, and the pressure relief opening is in communication with the first chamber, and is configured to spray the gas in the second chamber to the first chamber. The first chamber includes a discharge opening, and the discharge opening is configured to discharge the fire extinguishing chemical agent in the first chamber after the gas generated after the gas-generating chemical agent is ignited enters the first chamber.

Abstract: A door lock system includes an external handle, a locking structure and a driving module. The driving module includes a driving shaft; a driving bar penetrates through the driving shaft; a cam sleeved on the driving shaft and having a guiding inclined surface; a locking member movably arranged between the locking structure and the cam, and formed with a through hole; a sliding member slidably sleeved on the driving bar and having one end penetrates through the through hole; and a first elastic member configured to push the sliding member to abut against the guiding inclined surface. When the driving bar is rotated along a first rotation direction, the sliding member is configured to move toward the locking structure along the guiding inclined surface to push the locking member to engage with the locking structure, in order to prevent the external handle from rotating relative to the locking structure.

Abstract: Conventional email filtering services are not suitable for recognizing sophisticated malicious emails, and therefore may allow sophisticated malicious emails to reach inboxes by mistake. Introduced here are threat detection platforms designed to take an integrative approach to detecting security threats. For example, after receiving input indicative of an approval from an individual to access past email received by employees of an enterprise, a threat detection platform can download past emails to build a machine learning (ML) model that understands the norms of communication with internal contacts (e.g., other employees) and/or external contacts (e.g., vendors). By applying the ML model to incoming email, the threat detection platform can identify security threats in real time in a targeted manner.

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

Abstract: A semiconductor device includes an isolation insulating layer disposed over a substrate, a semiconductor fin disposed over the substrate, an upper portion of the semiconductor fin protruding from the isolation insulating layer and a lower portion of the semiconductor fin being embedded in the isolation insulating layer, a gate structure disposed over the upper portion of the semiconductor fin and including a gate dielectric layer and a gate electrode layer, gate sidewall spacers disposed over opposing side faces of the gate structure, and a source/drain epitaxial layer. The upper portion of the semiconductor fin includes a first epitaxial growth enhancement layer made of a semiconductor material different from a remaining part of the semiconductor fin. The first epitaxial growth enhancement layer is in contact with the source/drain epitaxial layer. The gate dielectric layer covers the upper portion of the semiconductor fin including the first epitaxial growth enhancement layer.

Abstract: An electric lock includes a housing, a manual control member rotatably affixed to the housing, and a clutch mechanism. The clutch mechanism includes a clutch base rotatably affixed to the housing; a retractable plug arranged on the clutch base, wherein the retractable plug is radially movable relative to the clutch base; a driving member abutting against a first end of the retractable plug; and a motor configured to drive the driving member to move relative to the clutch base toward the shaft of the manual control member.