Abstract: The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate having an active area disposed over or in the semiconductor substrate, and a first isolation member extending into the semiconductor substrate and disposed adjacent to the active area; disposing an energy-decomposable mask over the semiconductor substrate and the first isolation member; irradiating a portion of the energy-decomposable mask with an electromagnetic radiation; removing the portion of the energy-decomposable mask irradiated with the electromagnetic radiation to form a patterned energy-decomposable mask; removing a portion of the semiconductor substrate exposed through the patterned energy-decomposable mask to form a trench; removing the patterned energy-decomposable mask; and forming a second isolation member within the trench.

Abstract: The present application provides a method of manufacturing a memory device.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a fin, a gate structure positioned on the fin, impurity regions positioned on two sides of the fin, contacts positioned on the impurity regions, and conductive covering layers positioned on the contacts. The conductive covering layers are formed of copper germanide.

Abstract: The present disclosure provides a semiconductor device structure with a conductive contact and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate; a conductive contact penetrating through the dielectric layer; and a metal oxide layer separating the conductive contact from the dielectric layer, wherein the conductive contact and the metal oxide layer comprise a same metal.

Abstract: The present disclosure provides a semiconductor device structure with a conductive contact and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate; a conductive contact penetrating through the dielectric layer; and a metal oxide layer separating the conductive contact from the dielectric layer, wherein the conductive contact and the metal oxide layer comprise a same metal.

Abstract: The present application discloses a semiconductor device with a programmable unit and a method for fabricating the semiconductor device. The semiconductor device includes a substrate comprising a first region and a second region; a first semiconductor element positioned in the first region of the substrate; a second semiconductor element positioned in the first region of the substrate and electrically coupled to the first semiconductor element; and a programmable unit positioned in the second region and electrically connected to the first semiconductor element.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a fin, a gate structure positioned on the fin, impurity regions positioned on two sides of the fin, contacts positioned on the impurity regions, and conductive covering layers positioned on the contacts. The conductive covering layers are formed of copper germanide.

Abstract: The present disclosure provides a semiconductor device with a graphene layer and a method for forming the same. The semiconductor device includes a first source/drain region and a second source/drain region disposed in a semiconductor substrate. The semiconductor device also includes a word line structure disposed in the semiconductor substrate and between the first source/drain region and the second source/drain region. The word line structure includes a gate dielectric layer, and a lower electrode layer disposed over the gate dielectric layer. The word line structure also includes an upper electrode layer disposed over the lower electrode layer, and a first graphene layer disposed between the lower electrode layer and the upper electrode layer.

Abstract: The present application discloses a semiconductor device with a programmable unit and a method for fabricating the semiconductor device. The semiconductor device includes a substrate comprising a first region and a second region; a first semiconductor element positioned in the first region of the substrate; a second semiconductor element positioned in the first region of the substrate and electrically coupled to the first semiconductor element; and a programmable unit positioned in the second region and electrically connected to the first semiconductor element.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a first region and a second region, a first semiconductor element positioned in the first region of the substrate, a second semiconductor element positioned in the first region of the substrate, a bridge conductive unit electrically connected the first semiconductor element and the second semiconductor element, and a programmable unit positioned in the second region and electrically connected to the bridge conductive unit.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including an array area and a peripheral area adjacent to the array area, a first gate structure positioned in the array area, and a second gate structure positioned in the peripheral area. A width of the first gate structure is less than a width of the second gate structure, and a depth of the first gate structure is less than a depth of the second gate structure.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including an array area and a peripheral area adjacent to the array area, a first gate structure positioned in the array area, and a second gate structure positioned in the peripheral area. A width of the first gate structure is less than a width of the second gate structure, and a depth of the first gate structure is less than a depth of the second gate structure.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a first region and a second region, a first semiconductor element positioned in the first region of the substrate, a second semiconductor element positioned in the first region of the substrate, a bridge conductive unit electrically connected the first semiconductor element and the second semiconductor element, and a programmable unit positioned in the second region and electrically connected to the bridge conductive unit.

Abstract: Methods and kits for sampling mucous from within a sinus to determine if a single sample includes one or more bacterial types indicating bacterial sinusitis.

Abstract: Methods and kits for sampling mucous from within a sinus to determine if a single sample includes one or more bacterial types indicating bacterial sinusitis.

Abstract: Methods and kits for sampling mucous from within a sinus to determine if a single sample includes one or more bacterial types indicating bacterial sinusitis.

Abstract: A light guide plate, for use with a back-light module for seasonal scanning in dividing zones, includes a light-pervious substrate having a plurality of dividing blocks formed thereon, an optical grating structure disposed on light incident surface of each of the dividing blocks for allowing light to enter, and a light diffusion structure disposed on an optical surface of each of the dividing blocks for diffusing the light. As the light-pervious substrate is adapted for seasonal scanning in different zones, the provision of the optical grating structure can shorten the light mixing distance while the light diffusion structure can evenly emit and spread the light throughout the light guide plate to solve the drawbacks of the prior techniques. Further, a back-light module having the light guide plate is provided.