Patents by Inventor Cheng-Long Yeh
Cheng-Long Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230058195Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first semiconductor layer which includes a first dopant and a second dopant. The second semiconductor structure is located on the first semiconductor structure and includes the first dopan. The active region is located between the first semiconductor structure and the second semiconductor structure and includes the first dopant. The first dopant and the second dopant have different conductivity types.Type: ApplicationFiled: August 22, 2022Publication date: February 23, 2023Inventors: Shih-Nan YEN, Ming-Ta CHIN, Yi-Ching LEE, Cheng-Long YEH
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Patent number: 11588072Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.Type: GrantFiled: November 4, 2020Date of Patent: February 21, 2023Assignee: EPISTAR CORPORATIONInventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
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Patent number: 11227978Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.Type: GrantFiled: November 11, 2019Date of Patent: January 18, 2022Assignee: Epistar CorporationInventors: Wen-Luh Liao, Cheng-Long Yeh, Ko-Yin Lai, Yao-Ru Chang, Yung-Fu Chang, Yi Hsiao, Shih-Chang Lee
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Publication number: 20210135052Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.Type: ApplicationFiled: November 4, 2020Publication date: May 6, 2021Inventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
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Patent number: 10749077Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: GrantFiled: December 20, 2018Date of Patent: August 18, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Publication number: 20200152836Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Wen-Luh LIAO, Cheng-Long YEH, Ko-Yin LAI, Yao-Ru CHANG, Yung-Fu CHANG, Yi HSIAO, Shih-Chang LEE
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Patent number: 10580937Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: GrantFiled: December 20, 2018Date of Patent: March 3, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Publication number: 20190148599Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: December 20, 2018Publication date: May 16, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Publication number: 20190131496Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: ApplicationFiled: December 20, 2018Publication date: May 2, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Patent number: 10205059Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.Type: GrantFiled: September 20, 2017Date of Patent: February 12, 2019Assignee: Epistar CorporationInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
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Publication number: 20180033918Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: September 20, 2017Publication date: February 1, 2018Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
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Patent number: 9331239Abstract: A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first cladding layer of n type, a second cladding layer of p type, and an active layer between the first cladding layer and the second cladding layer wherein the active layer comprises a well layer interposed between adjacent barrier layers. The light-emitting device further comprises a means for reducing a flicker noise of the light-emitting device.Type: GrantFiled: July 7, 2015Date of Patent: May 3, 2016Assignee: EPISTAR CORPORATIONInventors: Yi-Chieh Lin, Cheng-Long Yeh, Rong-Ren Lee, Shih-Chang Lee