Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: A topical subcutaneous microcirculation detection device includes a first light source module, a second light source module, a lens plate, a first light sensor, and a second light sensor. The first and second light source modules are configured to emit first and second illumination beams, respectively. A flat plate portion of the lens plate is disposed to lean against a first portion of skin of a subject. A convex surface of a first convex lens portion of the lens plate is disposed to push into a second portion of the skin of the subject. The first and second illumination beams are reflected into first and second reflected beams by the first and second portions of the skin, respectively. The first and second reflected beams are transmitted to the first and second light sensors, respectively.

Abstract: The invention discloses a pure end-to-end deep reinforcement learning for training car racing game AI bot that uses only the velocity information extracted from screen for both training and testing phases without using any internal state from game environment, such as the car facing angle. The learned AI bot can play better than the average performance of human players. In addition, the reward function is designed to consist only the velocity value, and use Ape-X distributed training framework combined with a variant of Deep Q Network to solve the sparse training signal problem caused by the reward function of an original design. Moreover, limit learner rate method is designed that improves the training efficiency and training performance. The AI bot trained in this way can achieve performance beyond the average human level and reach a level close to professional players.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Abstract: The invention discloses a pure end-to-end deep reinforcement learning for training car racing game AI bot that uses only the velocity information extracted from screen for both training and testing phases without using any internal state from game environment, such as the car facing angle. The learned AI bot can play better than the average performance of human players. In addition, the reward function is designed to consist only the velocity value, and use Ape-X distributed training framework combined with a variant of Deep Q Network to solve the sparse training signal problem caused by the reward function of an original design. Moreover, limit learner rate method is designed that improves the training efficiency and training performance. The AI bot trained in this way can achieve performance beyond the average human level and reach a level close to professional players.

Abstract: The present invention provides a method for scheduling jobs with idle resources. When the computational units of computers are idle, according to the variation of idle time, appropriate jobs may be allocated to the computational units. Then the unscheduled jobs may be completed by using idle time segments. Thereby, the utilization rate of computation resources and the completion rate of jobs may be enhanced.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: An automated external defibrillator (AED) with a panoramic video camera device comprises a case, an AED accommodated by the case, a microprocessor built in the AED, an image capture device electrically connected with the microprocessor, a memory electrically connected with the microprocessor and storing the images captured by the image capture device, and a panoramic lens arranged above the image capture device. During usage, the present invention takes motion pictures panoramically to provide more detailed information for the medical personnel after the patient has been transported to the hospital and ascertain the truth for a medical dispute.

Abstract: An electrode pad set comprises a left electrode pad, a right electrode pad, a first indication figure on the left electrode pad, a second indication figure on the right electrode pad. The left electrode pad and the right electrode pad respectively have a first warning sign with a first shape and a second warning sign with a second shape corresponding to the first shape. The perimeter of the first warning sign has a first coating with a first color. The perimeter of the second warning sign has a second coating with a second color. A left electrode pad symbol of the first indication figure has a color identical to the first color. A right electrode pad symbol of the second indication figure has a color identical to the second color. The present invention uses colors, shapes and indication figures to promote the success rate of attaching the electrode pads.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: The present invention proposes an implantable bone-vibrating hearing aid, including a transmitting coil for receiving an audio-converted signal and generating a corresponding magnetic field, a magnetic conducting element for sensing the corresponding magnetic filed to generate a driving force, and a vibrating module for receiving the driving force and generating a vibration, wherein the magnetic conducting element and the vibrating module are implanted beneath a skin of a user, and the vibration generated by the vibrating module knocks on the temporal bone of the ear of the user, which generates mechanical waves that propagate to the inner ear of the user, creating a sense of hearing thereto.