Patents by Inventor Cheng-Lung Yang
Cheng-Lung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240103577Abstract: In one example, an electronic device may include a main body, and a back cover having an opening. The back cover may include an inner surface, and a hook protruding from the inner surface. The hook may be engageable with a receiving portion of the main body to slidably couple the back cover to the main body. Further, electronic device may include a component housing connected to the main body through the opening in the back cover to fixedly couple the back cover to the main body.Type: ApplicationFiled: November 5, 2019Publication date: March 28, 2024Applicant: Hewlett-Packard Development Company, L.P.Inventors: Cheng-Yi Yang, Szu Tao Tong, Hai-Lung Hung
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Publication number: 20240021499Abstract: Some devices included a substrate; and a through via, including a plurality of scallops adjacent the through via in a first region and a plurality of scallops adjacent the through via in a second region, the of scallops having a first depth, the scallops having a greater depth. Some devices include an opening extending into a substrate, including a first region and a second region. Sidewalls of the opening include a stack of first concave portions extending a first distance into the first substrate, and a stack of second concave portions extending a second distance, greater than and parallel to the first distance, into the first substrate. A conductor partially fills the first concave portions and at least partially fills the respective second concave portions.Type: ApplicationFiled: July 31, 2023Publication date: January 18, 2024Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Publication number: 20240014105Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes at least one substrate and an interconnection structure. The at least one substrate has a cavity partially defined by an inner sidewall of the at least one substrate and a channel disposed at a bottom of the at least one substrate. The channel laterally penetrates through the at least one substrate. The interconnections structure is disposed over the substrate, and the interconnection structure has a through hole penetrating through the interconnection structure. The through hole, the cavity and the channel are in spatial communication with each other.Type: ApplicationFiled: September 22, 2023Publication date: January 11, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Sheng Lin, Cheng-Lung Yang, Chin-Yu Ku, Ming-Da Cheng, Wen-Hsiung Lu, Tang-Wei Huang, Fu Wei Liu
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Patent number: 11776881Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: GrantFiled: March 25, 2022Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Patent number: 11769716Abstract: A semiconductor device and method of forming the same are provided. The semiconductor device includes at least one substrate and an interconnection structure. The at least one substrate has a cavity partially defined by an inner sidewall of the at least one substrate and a channel disposed at a bottom of the at least one substrate. The channel laterally penetrates through the at least one substrate. The interconnections structure is disposed over the substrate, and the interconnection structure has a through hole penetrating through the interconnection structure. The through hole, the cavity and the channel are in spatial communication with each other.Type: GrantFiled: March 25, 2021Date of Patent: September 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Sheng Lin, Cheng-Lung Yang, Chin-Yu Ku, Ming-Da Cheng, Wen-Hsiung Lu, Tang-Wei Huang, Fu Wei Liu
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Publication number: 20220310492Abstract: A semiconductor device and method of forming the same are provided. The semiconductor device includes at least one substrate and an interconnection structure. The at least one substrate has a cavity partially defined by an inner sidewall of the at least one substrate and a channel disposed at a bottom of the at least one substrate. The channel laterally penetrates through the at least one substrate. The interconnections structure is disposed over the substrate, and the interconnection structure has a through hole penetrating through the interconnection structure. The through hole, the cavity and the channel are in spatial communication with each other.Type: ApplicationFiled: March 25, 2021Publication date: September 29, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Sheng Lin, Cheng-Lung Yang, Chin-Yu Ku, Ming-Da Cheng, Wen-Hsiung Lu, Tang-Wei Huang, Fu Wei Liu
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Publication number: 20220293494Abstract: A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.Type: ApplicationFiled: May 30, 2022Publication date: September 15, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Patent number: 11387168Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.Type: GrantFiled: July 9, 2020Date of Patent: July 12, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Publication number: 20220216133Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: ApplicationFiled: March 25, 2022Publication date: July 7, 2022Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Patent number: 11289404Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: GrantFiled: January 17, 2020Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Patent number: 11127703Abstract: Semiconductor devices are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump. The spacer surrounds the bump and disposed between the etching stop layer and the bump.Type: GrantFiled: April 2, 2019Date of Patent: September 21, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chin-Yu Ku, Cheng-Lung Yang, Chen-Shien Chen, Hon-Lin Huang, Chao-Yi Wang, Ching-Hui Chen, Chien-Hung Kuo
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Publication number: 20210225735Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.Type: ApplicationFiled: January 17, 2020Publication date: July 22, 2021Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
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Publication number: 20200343162Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.Type: ApplicationFiled: July 9, 2020Publication date: October 29, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Patent number: 10741477Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.Type: GrantFiled: March 23, 2018Date of Patent: August 11, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Publication number: 20190295925Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.Type: ApplicationFiled: March 23, 2018Publication date: September 26, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lung Yang, CHIH-HUNG Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Publication number: 20190229081Abstract: Semiconductor devices are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump. The spacer surrounds the bump and disposed between the etching stop layer and the bump.Type: ApplicationFiled: April 2, 2019Publication date: July 25, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Yu Ku, Cheng-Lung Yang, Chen-Shien Chen, Hon-Lin Huang, Chao-Yi Wang, Ching-Hui Chen, Chien-Hung Kuo
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Patent number: 10276528Abstract: A semiconductor device and a manufacturing method for the semiconductor device are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump a spacer and surrounds the bump and disposed between the etching stop layer and the bump.Type: GrantFiled: July 18, 2017Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Yu Ku, Cheng-Lung Yang, Chen-Shien Chen, Hon-Lin Huang, Chao-Yi Wang, Ching-Hui Chen, Chien-Hung Kuo
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Publication number: 20190027452Abstract: A semiconductor device and a manufacturing method for the semiconductor device are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump a spacer and surrounds the bump and disposed between the etching stop layer and the bump.Type: ApplicationFiled: July 18, 2017Publication date: January 24, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Yu Ku, Cheng-Lung Yang, Chen-Shien Chen, Hon-Lin Huang, Chao-Yi Wang, Ching-Hui Chen, Chien-Hung Kuo
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Patent number: 6541399Abstract: A new method is provided of measuring actual temperatures across the surface of a semiconductor wafer. The thickness of a layer of Sub-Atmospheric TEOS Undoped Silicon Glass (SAUSG) is used to monitor the temperature distribution across the surface of a silicon substrate.Type: GrantFiled: October 1, 2001Date of Patent: April 1, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Mong-Chi Hung, Pin-Huan Wu, Cheng-Lung Yang